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For: Trafas BM, Xu F, Vos M, Aldao CM, Weaver JH. Metal/GaP(110) interface formation: Ti, Pd, Ag, and Au adatom deposition. Phys Rev B Condens Matter 1989;40:4022-4029. [PMID: 9992376 DOI: 10.1103/physrevb.40.4022] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
Number Cited by Other Article(s)
1
Chiaradia P, Bonnet JE, Fanfoni M, Goletti C, Lampel G. Schottky barrier and surface photovoltage induced by synchrotron radiation in GaP(110)/Ag. PHYSICAL REVIEW. B, CONDENSED MATTER 1993;47:13520-13526. [PMID: 10005662 DOI: 10.1103/physrevb.47.13520] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
2
Ludeke R, McLean AB, Taleb-Ibrahimi A. Electronic properties of nascent GaP(110)-noble-metal interfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;42:2982-2995. [PMID: 9995790 DOI: 10.1103/physrevb.42.2982] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
3
Duò L, Sancrotti M, Cosso R, D'Addato S, Ruocco A, Nannarone S, Norman D, Weightman P. Strong chemical reactivity at the early stages of Yb overgrowth on GaP(110): A synchrotron-radiation study. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;42:3478-3484. [PMID: 9995862 DOI: 10.1103/physrevb.42.3478] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
4
Sancrotti M, Ciccacci F, Fanfoni M, Chiaradia P. Kinetics study of the GaP(110)/Cu interface via P L2,3VV Auger line shape and x-ray-photoemission spectroscopies. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;42:3745-3748. [PMID: 9995892 DOI: 10.1103/physrevb.42.3745] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
5
Vitomirov IM, Aldao CM, Waddill GD, Capasso C, Weaver JH. Metal-InP(110) interface properties: Temperature, dopant-concentration, and cluster-deposition dependencies. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;41:8465-8476. [PMID: 9993172 DOI: 10.1103/physrevb.41.8465] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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