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For: Branz HM, Silver M. Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defects. Phys Rev B Condens Matter 1990;42:7420-7428. [PMID: 9994885 DOI: 10.1103/physrevb.42.7420] [Citation(s) in RCA: 54] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
Number Cited by Other Article(s)
1
Light-induced changes of the non-Gaussian 1/f noise statistics in doped hydrogenated amorphous silicon. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/01418639408240131] [Citation(s) in RCA: 26] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
2
Defects and hydrogen in amorphous silicon nitride. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/01418639408240111] [Citation(s) in RCA: 116] [Impact Index Per Article: 6.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
3
Light-induced metastable changes in amorphous silicon nitride. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/01418639408240115] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
4
Hydrogen microstructure in hydrogenated amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;54:17759-17762. [PMID: 9985906 DOI: 10.1103/physrevb.54.17759] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
5
Paramagnetic point defects in silicon nitride and silicon oxynitride thin films on silicon. Colloids Surf A Physicochem Eng Asp 1996. [DOI: 10.1016/0927-7757(96)03595-9] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/17/2022]
6
Temperature dependence of the electron-spin resonance in nitrogen-rich amorphous silicon nitride. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;49:13420-13422. [PMID: 10010277 DOI: 10.1103/physrevb.49.13420] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
7
Photoluminescence above the excitation energy in a-Si:H. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;49:5073-5076. [PMID: 10011451 DOI: 10.1103/physrevb.49.5073] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
8
Chemical equilibrium description of stable and metastable defect structures in a-Si:H. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;49:2427-2442. [PMID: 10011076 DOI: 10.1103/physrevb.49.2427] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
9
Nonequilibrium occupancy of tail states and defects in a-Si:H: Implications for defect structure. PHYSICAL REVIEW. B, CONDENSED MATTER 1993;48:14198-14207. [PMID: 10007834 DOI: 10.1103/physrevb.48.14198] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
10
Improved defect-pool model for charged defects in amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1993;48:10815-10827. [PMID: 10007381 DOI: 10.1103/physrevb.48.10815] [Citation(s) in RCA: 96] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
11
Dangling-bond relaxation and deep-level measurements in hydrogenated amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1993;48:8667-8671. [PMID: 10007080 DOI: 10.1103/physrevb.48.8667] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
12
Light-induced changes of the 1/f noise in hydrogenated amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1993;47:10903-10906. [PMID: 10005213 DOI: 10.1103/physrevb.47.10903] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
13
Electron-spin-echo envelope-modulation study of the distance between dangling bonds and hydrogen atoms in hydrogenated amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1993;47:7013-7024. [PMID: 10004695 DOI: 10.1103/physrevb.47.7013] [Citation(s) in RCA: 30] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
14
Defect chemical potential and the density of states in amorphous silicon. PHYSICAL REVIEW LETTERS 1993;70:1654-1657. [PMID: 10053350 DOI: 10.1103/physrevlett.70.1654] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
15
Modulated electron-spin-resonance measurements and defect correlation energies in amorphous silicon. PHYSICAL REVIEW LETTERS 1992;68:2972-2975. [PMID: 10045542 DOI: 10.1103/physrevlett.68.2972] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
16
Needs of the amorphous silicon program with respect to stabilized module performance. ACTA ACUST UNITED AC 1991. [DOI: 10.1016/0379-6787(91)90051-p] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
17
Hydrogen and defects in amorphous silicon. PHYSICAL REVIEW LETTERS 1991;66:1493-1496. [PMID: 10043223 DOI: 10.1103/physrevlett.66.1493] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
18
Defect relaxation in amorphous silicon: Stretched exponentials, the Meyer-Neldel rule, and the Staebler-Wronski effect. PHYSICAL REVIEW. B, CONDENSED MATTER 1991;43:4057-4070. [PMID: 9997755 DOI: 10.1103/physrevb.43.4057] [Citation(s) in RCA: 71] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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