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Light-induced changes of the non-Gaussian 1/f noise statistics in doped hydrogenated amorphous silicon. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/01418639408240131] [Citation(s) in RCA: 26] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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Hydrogen microstructure in hydrogenated amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:17759-17762. [PMID: 9985906 DOI: 10.1103/physrevb.54.17759] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Paramagnetic point defects in silicon nitride and silicon oxynitride thin films on silicon. Colloids Surf A Physicochem Eng Asp 1996. [DOI: 10.1016/0927-7757(96)03595-9] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/17/2022]
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Temperature dependence of the electron-spin resonance in nitrogen-rich amorphous silicon nitride. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:13420-13422. [PMID: 10010277 DOI: 10.1103/physrevb.49.13420] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Photoluminescence above the excitation energy in a-Si:H. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:5073-5076. [PMID: 10011451 DOI: 10.1103/physrevb.49.5073] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Chemical equilibrium description of stable and metastable defect structures in a-Si:H. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:2427-2442. [PMID: 10011076 DOI: 10.1103/physrevb.49.2427] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Nonequilibrium occupancy of tail states and defects in a-Si:H: Implications for defect structure. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:14198-14207. [PMID: 10007834 DOI: 10.1103/physrevb.48.14198] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Improved defect-pool model for charged defects in amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:10815-10827. [PMID: 10007381 DOI: 10.1103/physrevb.48.10815] [Citation(s) in RCA: 96] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Dangling-bond relaxation and deep-level measurements in hydrogenated amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:8667-8671. [PMID: 10007080 DOI: 10.1103/physrevb.48.8667] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Light-induced changes of the 1/f noise in hydrogenated amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:10903-10906. [PMID: 10005213 DOI: 10.1103/physrevb.47.10903] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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Electron-spin-echo envelope-modulation study of the distance between dangling bonds and hydrogen atoms in hydrogenated amorphous silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:7013-7024. [PMID: 10004695 DOI: 10.1103/physrevb.47.7013] [Citation(s) in RCA: 30] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Defect chemical potential and the density of states in amorphous silicon. PHYSICAL REVIEW LETTERS 1993; 70:1654-1657. [PMID: 10053350 DOI: 10.1103/physrevlett.70.1654] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Modulated electron-spin-resonance measurements and defect correlation energies in amorphous silicon. PHYSICAL REVIEW LETTERS 1992; 68:2972-2975. [PMID: 10045542 DOI: 10.1103/physrevlett.68.2972] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Defect relaxation in amorphous silicon: Stretched exponentials, the Meyer-Neldel rule, and the Staebler-Wronski effect. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:4057-4070. [PMID: 9997755 DOI: 10.1103/physrevb.43.4057] [Citation(s) in RCA: 71] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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