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Citation(s) in
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10
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Vrijmoeth J
, Heslinga DR, Klapwijk TM.
Medium-energy ion-scattering study of a possible relation between the Schottky-barrier height and the defect density at NiSi2/Si(111) interfaces.
Phys Rev B Condens Matter
1990;
42
:9598-9608. [PMID:
9995201
DOI:
10.1103/physrevb.42.9598
]
[
Citation(s) in
RCA
: 13
]
[
Impact Index Per Article: 0.4
]
[
Reference Citation Analysis
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[Indexed: 04/12/2023]
Number
Cited by Other Article(s)
1
Tung RT
, Sullivan JP, Schrey F, Levi AFJ. Single Crystal NiSi2/Si Interfaces: Fabrication, Structures, and Schottky Barrier Heights.
ACTA ACUST UNITED AC
2011. [DOI:
10.1557/proc-221-71
]
[
Citation(s) in
RCA
: 2
]
[
Impact Index Per Article: 0.2
]
[
Reference Citation Analysis
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[Indexed: 11/13/2022]
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2
Epitaxial Bi∕GaAs diodes via electrodeposition.
ACTA ACUST UNITED AC
2006. [DOI:
10.1116/1.2218874
]
[
Citation(s) in
RCA
: 18
]
[
Impact Index Per Article: 1.0
]
[
Reference Citation Analysis
]
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[Indexed: 11/17/2022]
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3
Bolotin IL
, Houssiau L, Rabalais JW. Real-space surface crystallography: Experimental stereographic projections from ion scattering.
J Chem Phys
2000. [DOI:
10.1063/1.481312
]
[
Citation(s) in
RCA
: 8
]
[
Impact Index Per Article: 0.3
]
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[Indexed: 11/14/2022]
Open
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4
Tuilier MH
, Wetzel P, Pirri C, Bolmont D, Gewinner G. Interfacial structure of two-dimensional epitaxial Er silicide on Si(111).
PHYSICAL REVIEW. B, CONDENSED MATTER
1994;
50
:2333-2338. [PMID:
9976451
DOI:
10.1103/physrevb.50.2333
]
[
Citation(s) in
RCA
: 31
]
[
Impact Index Per Article: 1.0
]
[
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[Indexed: 04/12/2023]
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5
Li G
, Rabii S. Ab initio structural study of the silicon/nickel disilicide interfaces.
PHYSICAL REVIEW. B, CONDENSED MATTER
1994;
49
:2927-2930. [PMID:
10011133
DOI:
10.1103/physrevb.49.2927
]
[
Citation(s) in
RCA
: 2
]
[
Impact Index Per Article: 0.1
]
[
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[Indexed: 04/12/2023]
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6
Growth and characterization of epitaxial Ni and Co silicides.
ACTA ACUST UNITED AC
1992. [DOI:
10.1016/0920-2307(92)90003-j
]
[
Citation(s) in
RCA
: 228
]
[
Impact Index Per Article: 7.1
]
[
Reference Citation Analysis
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[Indexed: 11/21/2022]
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7
Weitering HH
, Ettema AR, Hibma T. Surface states and Fermi-level pinning at epitaxial Pb/Si(111) surfaces.
PHYSICAL REVIEW. B, CONDENSED MATTER
1992;
45
:9126-9135. [PMID:
10000775
DOI:
10.1103/physrevb.45.9126
]
[
Citation(s) in
RCA
: 28
]
[
Impact Index Per Article: 0.9
]
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Reference Citation Analysis
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[Indexed: 04/12/2023]
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8
Vrijmoeth J
, Zaima S, Vlieg E, Frenken JW. CoSi2/Si(111) interface: Determination of the interfacial metal coordination number.
PHYSICAL REVIEW. B, CONDENSED MATTER
1992;
45
:6700-6708. [PMID:
10000431
DOI:
10.1103/physrevb.45.6700
]
[
Citation(s) in
RCA
: 9
]
[
Impact Index Per Article: 0.3
]
[
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[Indexed: 04/12/2023]
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9
Ion beam synthesis of epitaxial silicides: fabrication, characterization and applications.
ACTA ACUST UNITED AC
1992. [DOI:
10.1016/0920-2307(92)90006-m
]
[
Citation(s) in
RCA
: 238
]
[
Impact Index Per Article: 7.4
]
[
Reference Citation Analysis
]
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[Indexed: 11/21/2022]
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10
Vrijmoeth J
, Zagwijn PM, Frenken JW. Monolayer resolution in medium-energy ion-scattering experiments on the NiSi2(111) surface.
PHYSICAL REVIEW LETTERS
1991;
67
:1134-1137. [PMID:
10045084
DOI:
10.1103/physrevlett.67.1134
]
[
Citation(s) in
RCA
: 9
]
[
Impact Index Per Article: 0.3
]
[
Reference Citation Analysis
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[Indexed: 05/23/2023]
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