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For:	Wilke S, Hennig D. Theoretical approach to delta doping of GaAs with In. Phys Rev B Condens Matter 1991;43:12470-12476. [PMID: 9997046 DOI: 10.1103/physrevb.43.12470] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

Number	Cited by Other Article(s)
1	Electronic Properties of Ultrathin Isoelectronic Intralayers in Semiconductors. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-240-597] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022] Abstract ABSTRACTAn empirical tight-binding Koster-Slater approach is used to determine the electronic properties of ultrathin“quantum wells”in semiconducting host materials of the zincblende or diamond structure. The“quantum well”is viewed as a giant two-dimensional isoelectronic impurity, and treated in a perturbational Green's function approach. We present results on the AlAs/GaAs and on the InP/InAs systems. Collapse Key Words Collapse MESH Headings Collapse Grants Collapse Affiliation(s) Collapse
2	Electronic structure of the SbGa heteroantisite defect in GaAs:Sb. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;50:11546-11551. [PMID: 9975285 DOI: 10.1103/physrevb.50.11546] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023] Abstract Collapse Key Words Collapse MESH Headings Collapse Grants Collapse Affiliation(s) Collapse
3	Photoluminescence from strained InAs monolayers in GaAs under pressure. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;50:1575-1581. [PMID: 9976341 DOI: 10.1103/physrevb.50.1575] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023] Abstract Collapse Key Words Collapse MESH Headings Collapse Grants Collapse Affiliation(s) Collapse
4	Heavy- and light-hole character of optical transitions in InAs/GaAs single-monolayer quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1992;45:4217-4220. [PMID: 10002034 DOI: 10.1103/physrevb.45.4217] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023] Abstract Collapse Key Words Collapse MESH Headings Collapse Grants Collapse Affiliation(s) Collapse