Positron annihilation in a single crystal of CoSi2: Experiment and theory

Electronic structure of CoSi(2) films on Si(111) studied using time-resolved two-photon photoemission

The occupied and unoccupied electronic structure of thin epitaxial CoSi(2) films grown on Si(111) substrates was studied using time-resolved two-photon photoemission and valence-band photoemission spectroscopy. The work function of the sample surfaces and the Schottky barrier height at the metal-semiconductor interface were measured as a function of annealing temperature. The photoemission data reveal several occupied and unoccupied electronic states which exhibit a high sensitivity to the annealing temperature. Time-resolved measurements show a behavior typical for a short-lived hot-electron gas and indications for an image-potential resonance.

Electron Momentum Density Distribution in Cobalt Disilicide: Analysis by the Maximum Entropy Method

New cobalt disilicide high resolution Compton scattering measurements have been performed at ESRF (European Synchrotron radiation facility) in France. In a first step, experimental results are compared with calculated results, obtained from a self consistent linear muffin tin orbitals band structure calculations. The second step consists in studying three dimensional electron momentum density (EMD) distribution – 3D map – in CoSi