Wang J, Wu B, Zhang G, Tian L, Gu G, Gao C. Pressure induced semiconductor–metal phase transition in GaAs: experimental and theoretical approaches.
RSC Adv 2016. [DOI:
10.1039/c5ra25013g]
[Citation(s) in RCA: 12] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
GaAs undergoes a semiconductor–metal transition, which was investigated by in situ electrical measurements and first-principles calculations under a high pressure.
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