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For: Talwar DN, Feng ZC. Tight-binding description for the bound electronic states of isolated single and paired native defects in beta -SiC. Phys Rev B Condens Matter 1991;44:3191-3198. [PMID: 9999915 DOI: 10.1103/physrevb.44.3191] [Citation(s) in RCA: 22] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

For:	Talwar DN, Feng ZC. Tight-binding description for the bound electronic states of isolated single and paired native defects in beta -SiC. Phys Rev B Condens Matter 1991;44:3191-3198. [PMID: 9999915 DOI: 10.1103/physrevb.44.3191] [Citation(s) in RCA: 22] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

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Cited by Other Article(s)

Sawabe T, Yano T. Electronic structures of β-SiC containing point defects studied by DV-Xα method. PROGRESS IN NUCLEAR ENERGY 2008. [DOI: 10.1016/j.pnucene.2007.11.045] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]

Ayma D, Lichanot A, Rérat M. Ab Initio Self-Consistent Calculations of the Polarizability and Related Functions of Cubic SiC. J Phys Chem B 1999. [DOI: 10.1021/jp983775r] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]

Itoh H, Kawasuso A, Ohshima T, Yoshikawa M, Nashiyama I, Tanigawa S, Misawa S, Okumura H, Yoshida S. Intrinsic Defects in Cubic Silicon Carbide. ACTA ACUST UNITED AC 1997. [DOI: 10.1002/1521-396x(199707)162:1<173::aid-pssa173>3.0.co;2-w] [Citation(s) in RCA: 127] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]

Wager JF. Thermodynamics and kinetics of vacancy self-compensation in wide-bandgap semiconductors. ACTA ACUST UNITED AC 1993. [DOI: 10.1080/01418619308213966] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]