Electronic structure of NiO: Correlation and band effects

Performance of the r2SCAN Functional in Transition Metal Oxides

We assess the accuracy and computational efficiency of the recently developed meta-generalized gradient approximation (metaGGA) functional, restored regularized strongly constrained and appropriately normed (r²SCAN), in transition metal oxide (TMO) systems and compare its performance against SCAN. Specifically, we benchmark the r²SCAN-calculated oxidation enthalpies, lattice parameters, on-site magnetic moments, and band gaps of binary 3d TMOs against the SCAN-calculated and experimental values. Additionally, we evaluate the optimal Hubbard U correction required for each transition metal (TM) to improve the accuracy of the r²SCAN functional, based on experimental oxidation enthalpies, and verify the transferability of the U values by comparing against experimental properties on other TM-containing oxides. Notably, including the U-correction with r²SCAN increases the lattice parameters, on-site magnetic moments, and band gaps of TMOs, apart from an improved description of the ground state electronic state in narrow band gap TMOs. The r²SCAN and r²SCAN+U calculated oxidation enthalpies follow the qualitative trends of SCAN and SCAN+U, with r²SCAN and r²SCAN+U predicting marginally larger lattice parameters, smaller magnetic moments, and lower band gaps compared to SCAN and SCAN+U, respectively. We observe the overall computational time (i.e., for all ionic+electronic steps) required for r²SCAN(+U) to be lower than SCAN(+U). Thus, the r²SCAN(+U) framework can offer a reasonably accurate description of the ground state properties of TMOs with better computational efficiency than SCAN(+U).

Exchange-Striction Driven Ultrafast Nonthermal Lattice Dynamics in NiO

We use femtosecond electron diffraction to study ultrafast lattice dynamics in the highly correlated antiferromagnetic (AFM) semiconductor NiO. Using the scattering vector (Q) dependence of Bragg diffraction, we introduce Q-resolved effective temperatures describing the transient lattice. We identify a nonthermal lattice state with preferential displacement of O compared to Ni ions, which occurs within ∼0.3  ps and persists for 25 ps. We associate this with transient changes to the AFM exchange striction-induced lattice distortion, supported by the observation of a transient Q asymmetry of Friedel pairs. Our observation highlights the role of spin-lattice coupling in routes towards ultrafast control of spin order.

Direct evidence for low-energy electron emission following O LVV Auger transitions at oxide surfaces

Oxygen, the third most abundant element in the universe, plays a key role in the chemistry of condensed matter and biological systems. Here, we report evidence for a hitherto unexplored Auger transition in oxides, where a valence band electron fills a vacancy in the 2s state of oxygen, transferring sufficient energy to allow electron emission. We used a beam of positrons with kinetic energies of [Formula: see text] eV to create O 2s holes via matter-antimatter annihilation. This made possible the elimination of the large secondary electron background that has precluded definitive measurements of the low-energy electrons emitted through this process. Our experiments indicate that low-energy electron emission following the Auger decay of O 2s holes from adsorbed oxygen and oxide surfaces are very efficient. Specifically, our results indicate that the low energy electron emission following the Auger decay of O 2s hole is nearly as efficient as electron emission following the relaxation of O 1s holes in [Formula: see text]. This has important implications for the understanding of Auger-stimulated ion desorption, Coulombic decay, photodynamic cancer therapies, and may yield important insights into the radiation-induced reactive sites for corrosion and catalysis.

Band Gap in Magnetic Insulators from a Charge Transition Level Approach

The theoretical description of the electronic structure of magnetic insulators and, in particular, of transition-metal oxides (TMOs), MnO, FeO, CoO, NiO, and CuO, poses several problems due to their highly correlated nature. Particularly challenging is the determination of the band gap. The most widely used approach is based on density functional theory (DFT) Kohn-Sham energy levels using self-interaction-corrected functionals (such as hybrid functionals). Here, we present a different approach based on the assumption that the band gap in some TMOs can have a partial Mott-Hubbard character and can be defined as the energy associated with the process Mm+(3dn) + Mm+(3dn) → M(m+1)+(3dn-1) + M(m-1)+(3dn+1). The band gap is thus associated with the removal (ionization potential, I) and addition (electron affinity, A) of one electron to an ion of the lattice. In fact, due to the hybridization of metal with ligand orbitals, these energy contributions are not purely atomic in nature. I and A can be computed accurately using the charge transition level (CTL) scheme. This procedure is based on the calculation of energy levels of charged states and goes beyond the approximations inherent to the Kohn-Sham (KS) approach. The novel and relevant aspect of this work is the extension of CTLs from the domain of point defects to a bulk property such as the band gap. The results show that the calculation based on CTLs provides band gaps in better agreement with experiments than the KS approach, with direct insight into the nature of the gap in these complex systems.

A multi-stop time-of-flight spectrometer for the measurement of positron annihilation-induced electrons in coincidence with the Doppler-shifted annihilation gamma photon

In this study, we describe an advanced multi-functional, variable-energy positron beam system capable of measuring the energies of multiple "positron-induced" electrons in coincidence with the Doppler-shifted gamma photon resulting from the annihilation of the correlated positron. The measurements were carried out using the unique characteristics of the digital time-of-flight spectrometer and the gamma spectrometer available with the advanced positron beam system. These measurements have resulted in (i) the first digital time-of-flight spectrum of positron annihilation-induced Auger electrons generated using coincident signals from a high-purity Ge detector and a micro-channel plate, (ii) a two-dimensional array of the energy of Doppler-broadened annihilation gamma and the time-of-flight of positron-annihilation induced Auger electrons/secondary electrons measured in coincidence with the annihilation gamma photon, and (iii) the time-of-flight spectra of multiple secondary electrons ejected from a bilayer graphene surface as a result of the impact and/or annihilation of positrons. The novelty of the gamma-electron coincidence spectroscopy has been demonstrated by extracting the Doppler-broadened spectrum of gamma photons emitted due to the annihilation of positrons exclusively with 1s electrons of carbon. The width of the extracted Doppler-broadened gamma spectrum has been found to be consistent with the expected broadening of the annihilation gamma spectrum due to the momentum of the 1s electrons in carbon.

Electronic structure of Pr2MnNiO6 from x-ray photoemission, absorption and density functional theory

The electronic structure of double perovskite Pr₂MnNiO₆ was studied using core x-ray photoelectron spectroscopy and x-ray absorption spectroscopy. The 2p x-ray absorption spectra show that Mn and Ni are in 4+  and 2+  states respectively. Based on charge transfer multiplet analysis of the 2p XPS spectra of both ions, we find charge transfer energies [Formula: see text] of 3.5 and 2.5 eV for Ni and Mn respectively. The ground state of Ni²⁺ and Mn⁴⁺ ions reveal a higher d electron count of 8.21 and 3.38 respectively as compared to the ionic values. The partial density of states clearly show a charge transfer character of the system for U  -  J [Formula: see text] 2 eV. The O 1s edge absorption spectra reveal a band gap of 0.9 eV, which is close to the value estimated from analysis of Ni and Mn 2p photoemission and absorption spectra. The combined analysis of nature of spectroscopic data and first principles calculations reveal that the material is a p  -  d type charge transfer insulator with an intermediate covalent character according to the Zannen-Sawatzy-Allen phase diagram.

Towards a First-Principles Determination of Effective Coulomb Interactions in Correlated Electron Materials: Role of Intershell Interactions

The determination of the effective Coulomb interactions to be used in low-energy Hamiltonians for materials with strong electronic correlations remains one of the bottlenecks for parameter-free electronic structure calculations. We propose and benchmark a scheme for determining the effective local Coulomb interactions for charge-transfer oxides and related compounds. Intershell interactions between electrons in the correlated shell and ligand orbitals are taken into account in an effective manner, leading to a reduction of the effective local interactions on the correlated shell. Our scheme resolves inconsistencies in the determination of effective interactions as obtained by standard methods for a wide range of materials, and allows for a conceptual understanding of the relation of cluster model and dynamical mean field-based electronic structure calculations.

Occupation matrix control of d- and f-electron localisations using DFT + U

The use of a density functional theory methodology with on-site corrections (DFT + U) has been repeatedly shown to give an improved description of localised d and f states over those predicted with a standard DFT approach. However, the localisation of electrons also carries with it the problem of metastability, due to the possible occupation of different orbitals and different locations. This study details the use of an occupation matrix control methodology for simulating localised d and f states with a plane-wave DFT + U approach which allows the user to control both the site and orbital localisation. This approach is tested for orbital occupation using octahedral and tetrahedral Ti(iii) and Ce(iii) carbonyl clusters and for orbital and site location using the periodic systems anatase-TiO2 and CeO2. The periodic cells are tested by the addition of an electron and through the formation of a neutral oxygen vacancy (leaving two electrons to localise). These test systems allow the successful study of orbital degeneracies, the presence of metastable states and the importance of controlling the site of localisation within the cell, and it highlights the use an occupation matrix control methodology can have in electronic structure calculations.

Crystal-field excitations in NiO under high pressure studied by resonant inelastic x-ray scattering

We report a study on charge-neutral crystal-field (dd) excitations in NiO as a function of applied pressure up to 55 GPa, using resonant inelastic x-ray scattering spectroscopy at the Ni K edge. We find distinct signatures of the pressure-induced modifications to the 3d orbital energies as a function of pressure. These modifications are experimentally evidenced by a subtle splitting of the dd-excitation resonance energies. We compare the experimental results to a charge-transfer cluster-model calculation, and a LSDA + U calculation of the ground state as a function of lattice constant. We thus show how resonant inelastic x-ray scattering spectroscopy is able to give insights into the manifold of excited states even in conditions that are difficult to access with many traditional experimental techniques.

Investigation of real materials with strong electronic correlations by the LDA+DMFT method

Materials with strong electronic correlations are at the cutting edge of experimental and theoretical studies, capturing the attention of researchers for a great variety of interesting phenomena: metal-insulator, phase and magnetic spin transitions, `heavy fermion' systems, interplay between magnetic order and superconductivity, appearance and disappearance of local magnetic moments, and transport property anomalies. It is clear that the richness of physical phenomena for these compounds is a result of partially filled 3d, 4f or 5f electron shells with local magnetic moments preserved in the solid state. Strong interactions of d and f electrons with each other and with itinerant electronic states of the material are responsible for its anomalous properties. Electronic structure calculations for strongly correlated materials should explicitly take into account Coulombic interactions between d or f electrons. Recent advances in this field are related to the development of the LDA+DMFT method, which combines local density approximation (LDA) with dynamical mean-field theory (DMFT) to account for electronic correlation effects. In recent years, LDA+DMFT has allowed the successful treatment not only of simple systems but also of complicated real compounds. Nowadays, the LDA+DMFT method is the state-of-the-art tool for investigating correlated metals and insulators, spin and metal-insulator transitions (MIT) in transition-metal compounds in paramagnetic and magnetically ordered phases.

A first-principles study on the adhesion of Pt layers to NiO(100) and IrO2(110) surfaces

We report a comparative study on the Pt/NiO and Pt/IrO(2) interfaces from first principles. It is found that Pt layers can bind with the IrO(2) surface much stronger than the NiO surface. The adhesion strength of Pt/NiO interfaces is dominated by the Pt-O ionic bond. The Pt layers induce corrugation of the oxide surfaces and loosen the Ni-O bonding strength. The dissolution of Ni atoms into the Pt slab appears to enhance the adhesion strength by forming stronger Ni-O bonds. In contrast, the adhesion strength of Pt/IrO(2) interfaces has contributions from both Pt-O ionic and Pt-Ir metallic bonds. Furthermore, the interfacial adhesion of IrO(2)/NiO is also stronger than that of Pt/NiO interfaces. IrO(2) may work as glue layers to stabilize Pt/NiO films.

Revisiting the valence-band and core-level photoemission spectra of NiO

We have reexamined the valence-band (VB) and core-level electronic structure of NiO by means of hard and soft x-ray photoemission spectroscopies. The spectral weight of the lowest energy state was found to be enhanced in the bulk sensitive Ni 2p core-level spectrum. A configuration-interaction model including a bound state screening has shown agreement with the core-level spectrum and off- and on-resonance VB spectra. These results identify the lowest energy states in the core-level and VB spectra as the Zhang-Rice (ZR) doublet bound states, consistent with the spin-fermion model and recent ab initio calculations within dynamical mean-field theory. The results indicate that the ZR character first ionization (the lowest hole-addition) states are responsible for transport properties in NiO and doped NiO.

Calculated momentum dependence of Zhang-Rice states in transition metal oxides

Using a combination of local density functional theory and cluster exact diagonalization based dynamical mean field theory, we calculate many-body electronic structures of several Mott insulating oxides including undoped high T(c) materials. The dispersions of the lowest occupied electronic states are associated with the Zhang-Rice singlets in cuprates and with doublets, triplets, quadruplets, and quintets in more general cases. Our results agree with angle resolved photoemission experiments including the decrease of the spectral weight of the Zhang-Rice band as it approaches k=0.

NiO: correlated band structure of a charge-transfer insulator

The band structure of the prototypical charge-transfer insulator NiO is computed by using a combination of an ab initio band structure method and the dynamical mean-field theory with a quantum Monte-Carlo impurity solver. Employing a Hamiltonian which includes both Ni d and O p orbitals we find excellent agreement with the energy bands determined from angle-resolved photoemission spectroscopy. This brings an important progress in a long-standing problem of solid-state theory. Most notably we obtain the low-energy Zhang-Rice bands with strongly k-dependent orbital character discussed previously in the context of low-energy model theories.

A unified view of the theoretical description of magnetic coupling in molecular chemistry and solid state physics

The magnetic interactions in organic diradicals, dinuclear inorganic complexes and ionic solids are presented from a unified point of view. Effective Hamiltonian theory is revised to show that, for a given system, it permits the definition of a general, unbiased, spin model Hamiltonian. Mapping procedures are described which in most cases permit one to extract the relevant magnetic coupling constants from ab initio calculations of the energies of the pertinent electronic states. Density functional theory calculations within the broken symmetry approach are critically revised showing the contradictions of this procedure when applied to molecules and solids without the guidelines of the appropriate mapping. These concepts are illustrated by describing the application of state-of-the-art methods of electronic structure calculations to a series of representative molecular and solid state systems.

All-electron self-consistent GW approximation: application to Si, MnO, and NiO

We present a new kind of self-consistent GW approximation based on the all-electron, full-potential linear muffin-tin orbital method. By iterating the eigenfunctions of the GW Hamiltonian, self-consistency in both the charge density and the quasiparticle spectrum is achieved. We explain why this form of self-consistency should be preferred to the conventional one. Some results for Si (a representative semiconductor) are presented. Finally we consider many details in the electronic structure of the antiferromagnetic insulators MnO and NiO. Excellent agreement with experiment is shown for many properties, suggesting that a Landau quasiparticle (energy band) picture provides a reasonable description of electronic structure even in these correlated materials.