Experimental magnetic phase diagram of a Gd/Fe multilayered ferrimagnet

Synthetic domain walls in [TbFeGa/TbFe]2 multilayers

Here we report the possibility of creating synthetic domain walls in nominal [Fe₇₂Ga₂₈/Tb₃₃Fe₆₇]₂ multilayers. The magnetization as a function of the temperature reveals the absence of Compensation temperature in the samples which can be understood considering an interdiffusion process that results in the formation of TbFeGa alloys at the nominal FeGa layers. Therefore, samples actually comprise TbFeGa and TbFe layers. The hysteresis loops exhibit magnetization steps related to the nucleation of domain walls formed because of the competition between different interactions: (i) the antiferromagnetic exchange coupling between the heavy rare earth (Tb) and the transition magnetic metal (Fe) inside each layer, (ii) the antiferromagnetic coupling between Tb and Fe at the interfaces, and (iii) the Zeeman energy. In good agreement with the experimental values, the nucleation field of the domain walls has been theoretically calculated taking into account the tilt of the magnetization with respect to the sample plane. Our experimental results indicate that by a proper thickness adjustment, it can be tuned, both the value of the nucleation field and the layer in which this firstly occurs. Experimental values for the exchange bias field have also been calculated.

Exchange Bias in Magnetic Topological Insulator Superlattices

Magnetic doping and proximity coupling can open a band gap in a topological insulator (TI) and give rise to dissipationless quantum conduction phenomena. Here, by combining these two approaches, we demonstrate a novel TI superlattice structure that is alternately doped with transition and rare earth elements. An unexpected exchange bias effect is unambiguously confirmed in the superlattice with a large exchange bias field using magneto-transport and magneto-optical techniques. Further, the Curie temperature of the Cr-doped layers in the superlattice is found to increase by 60 K compared to a Cr-doped single-layer film. This result is supported by density-functional-theory calculations, which indicate the presence of antiferromagnetic ordering in Dy:Bi2Te3 induced by proximity coupling to Cr:Sb2Te3 at the interface. This work provides a new pathway to realizing the quantum anomalous Hall effect at elevated temperatures and axion insulator state at zero magnetic field by interface engineering in TI heterostructures.

Effect of the interplay between layering sequence permutations and thickness on the magnetic features of Fe/Ni/Gd hetero-films

The effect of the interplay between layering sequence permutations and film thickness on the temperature-dependent magnetization and spin structure of Fe/Ni/Gd hetero-films (sizes: 10 nm × 10 nm × d nm and 20 nm × 20 nm × d nm, where d is the film thickness and with all possible layer sequence permutations) is investigated in the framework of an atomistic spin dynamics formalism.

Magnetoresistance in a constricted domain wall

We show that a thin Gd layer inserted between two thicker layers of permalloy contains an in-plane domain wall whose width can be controlled by varying the thickness of the Gd layer. The magnetoresistance of this structure has been measured with the current perpendicular to the plane, thus eliminating spurious contributions which have complicated previous measurements. This is the first measurement to show unambiguously that the domain wall contributes an additional resistance whose magnitude is in good agreement with theory.