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Pietryga JM, Park YS, Lim J, Fidler AF, Bae WK, Brovelli S, Klimov VI. Spectroscopic and Device Aspects of Nanocrystal Quantum Dots. Chem Rev 2017; 116:10513-622. [PMID: 27677521 DOI: 10.1021/acs.chemrev.6b00169] [Citation(s) in RCA: 390] [Impact Index Per Article: 55.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
Abstract
The field of nanocrystal quantum dots (QDs) is already more than 30 years old, and yet continuing interest in these structures is driven by both the fascinating physics emerging from strong quantum confinement of electronic excitations, as well as a large number of prospective applications that could benefit from the tunable properties and amenability toward solution-based processing of these materials. The focus of this review is on recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion. A specific underlying theme is innovative concepts for tuning the properties of QDs beyond what is possible via traditional size manipulation, particularly through heterostructuring. Examples of such advanced control of nanocrystal functionalities include the following: interface engineering for suppressing Auger recombination in the context of QD LEDs and lasers; Stokes-shift engineering for applications in large-area luminescent solar concentrators; and control of intraband relaxation for enhanced carrier multiplication in advanced QD photovoltaics. We examine the considerable recent progress on these multiple fronts of nanocrystal research, which has resulted in the first commercialized QD technologies. These successes explain the continuing appeal of this field to a broad community of scientists and engineers, which in turn ensures even more exciting results to come from future exploration of this fascinating class of materials.
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Affiliation(s)
- Jeffrey M Pietryga
- Nanotechnology and Advanced Spectroscopy Team, Chemistry Division, Los Alamos National Laboratory , Los Alamos, New Mexico 87545, United States
| | - Young-Shin Park
- Nanotechnology and Advanced Spectroscopy Team, Chemistry Division, Los Alamos National Laboratory , Los Alamos, New Mexico 87545, United States.,Center for High Technology Materials, University of New Mexico , Albuquerque, New Mexico 87131, United States
| | - Jaehoon Lim
- Nanotechnology and Advanced Spectroscopy Team, Chemistry Division, Los Alamos National Laboratory , Los Alamos, New Mexico 87545, United States
| | - Andrew F Fidler
- Nanotechnology and Advanced Spectroscopy Team, Chemistry Division, Los Alamos National Laboratory , Los Alamos, New Mexico 87545, United States
| | - Wan Ki Bae
- Photo-Electronic Hybrids Research Center, Korea Institute of Science and Technology , Seoul 02792, Korea
| | - Sergio Brovelli
- Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca , I-20125 Milano, Italy
| | - Victor I Klimov
- Nanotechnology and Advanced Spectroscopy Team, Chemistry Division, Los Alamos National Laboratory , Los Alamos, New Mexico 87545, United States
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Bellotti E, Farahmand M, Goano M, Ghillino E, Garetto C, Ghione G, Nilsson HE, Brennan KF, Ruden PP. Simulation of Carrier Transport in Wide Band Gap Semiconductors. ACTA ACUST UNITED AC 2011. [DOI: 10.1142/s0129156401000940] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
Affiliation(s)
- E. Bellotti
- Dept. of Electrical Engineering, Boston University, Boston, MA 02215, USA
| | - M. Farahmand
- Movaz Networks, 5445 Triangle Parkway, Norcross, GA 30092, USA
| | - M. Goano
- Dipartimento di Elettronica, Politecnico di Torino, corso Duca degli Abruzzi 24, I-10129 Torino, Italy
| | - E. Ghillino
- Dipartimento di Elettronica, Politecnico di Torino, corso Duca degli Abruzzi 24, I-10129 Torino, Italy
| | - C. Garetto
- Dipartimento di Elettronica, Politecnico di Torino, corso Duca degli Abruzzi 24, I-10129 Torino, Italy
| | - G. Ghione
- Dipartimento di Elettronica, Politecnico di Torino, corso Duca degli Abruzzi 24, I-10129 Torino, Italy
| | - H.-E. Nilsson
- Dept. of Information Technology, Mid-Sweden University, S-851 70 Sundsvall, Sweden
| | - K. F. Brennan
- School of Electrical and Computer Engineering, Georgia Tech, Atlanta, GA, 30332-0250, USA
| | - P. P. Ruden
- Dept. of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA
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Schmidt P, Berndt R, Vexler MI. Ultraviolet light emission from si in a scanning tunneling microscope. PHYSICAL REVIEW LETTERS 2007; 99:246103. [PMID: 18233462 DOI: 10.1103/physrevlett.99.246103] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2007] [Indexed: 05/25/2023]
Abstract
Ultraviolet and visible radiation is observed from the contacts of a scanning tunneling microscope with Si(100) and (111) wafers. This luminescence relies on the presence of hot electrons in silicon, which are supplied, at positive bias on n- and p-type samples, through the injection from the tip, or, at negative bias on p samples, by Zener tunneling. Measured spectra reveal a contribution of direct optical transitions in Si bulk. The necessary holes well below the valence band edge are injected from the tip or generated by Auger processes.
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Affiliation(s)
- Patrick Schmidt
- Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, D-24098 Kiel, Germany
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Reigrotzki M, Stobbe M, Redmer R, Schattke W. Impact ionization rate in ZnS. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:1456-1458. [PMID: 9981193 DOI: 10.1103/physrevb.52.1456] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Quade W, Schöll E, Rossi F, Jacoboni C. Quantum theory of impact ionization in coherent high-field semiconductor transport. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:7398-7412. [PMID: 9974719 DOI: 10.1103/physrevb.50.7398] [Citation(s) in RCA: 23] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Stobbe M, Redmer R, Schattke W. Impact ionization rate in GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:4494-4500. [PMID: 10011369 DOI: 10.1103/physrevb.49.4494] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Bauer A, Ludeke R. Direct determination of impact ionization quantum yield in Si by ballistic-electron-emission microscopy. PHYSICAL REVIEW LETTERS 1994; 72:928-931. [PMID: 10056570 DOI: 10.1103/physrevlett.72.928] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Boots HM. Electron-temperature concept at very high electric fields: A Monte Carlo study. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:9428-9433. [PMID: 10002747 DOI: 10.1103/physrevb.46.9428] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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