Structural and electronic properties of K/Si(100)2 x 1

Observation of a Mott insulating ground state for Sn/Ge(111) at low temperature

We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that the (3x3) phase formed at approximately 200 K, reverts to a new ((square root 3)x(square root 3))R30 degrees phase below 30 K. The vertical distortion characteristic of the (3x3) phase is lost across the phase transition, which is fully reversible. Angle-resolved photoemission experiments show that, concomitantly with the structural phase transition, a metal-insulator phase transition takes place. The ((square root 3)x(square root 3))R30 degrees ground state is interpreted as the formation of a Mott insulator for a narrow half-filled band in a two-dimensional triangular lattice.

T1-relaxation of 129Xe on metal single crystal surfaces-multilayer experiments on iridium and monolayer considerations

The surface of a typical laboratory single crystal has about 10(15) surface atoms or adsorption sites, respectively, and is thus far out of reach for conventional NMR experiments using thermal polarization. It should however be in reach for NMR of adsorbed laser polarized (hyperpolarized) 129Xe, which is produced by spin transfer from optically pumped rubidium. With multilayer experiments of xenon adsorbed on an iridium surface we do not only demonstrate that monolayer sensitivity has been obtained, we also show that such surface experiments can be performed under ultra high vacuum conditions with the crystal being mounted in a typical surface analysis chamber on a manipulator with far-reaching sample heating and cooling abilities. With only four spectra summed up we present an NMR signal from at most 4x10(14) atoms of 129Xe, four layers of naturally abundant xenon, respectively. The fact that no monolayer signal has been measured so far is explained by a fast Korringa relaxation due to the Fermi contact interaction of the 129Xe nuclei with the electrons of the metal substrate. T(1)-relaxation times in the order of several ms have been calculated using all electron density functional theory for several metal substrates.