1
|
Sun AA, Gao SP, Gu G. Peculiar bond characters of fivefold coordinated octet compound crystals. Chem Sci 2020; 11:4340-4350. [PMID: 34122892 PMCID: PMC8152722 DOI: 10.1039/d0sc00292e] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2020] [Accepted: 03/26/2020] [Indexed: 11/22/2022] Open
Abstract
The present work exemplifies complementary perspectives offered by the band and bond pictures of solids, with an emphasis on the chemical intuition pertaining to the latter, especially in the presence of interfaces. The modern computational method of constructing a unique set of maximally localized Wannier functions from delocalized band states imparts new interpretations to the familiar concept of chemical bonds in the context of crystalline solids. By bridging the band and bond pictures using advanced computational tools, we reveal for the first time the unusual bond characters of a long-predicted fivefold coordinated structure of binary octet compounds A N B8-N consisting of AA' stacked planar AB honeycombs. While the isolated monolayer retains the familiar p z -π bonding in a honeycomb framework as in graphene and hexagonal boron nitride, the bulk foregoes in-plane π bonding and embraces out-of-plane ⋯A-B-A-B⋯ chain bonding via overlapping p z orbitals. Not only does the chemical intuition gained by invoking the bond picture clarify the chemical nature of the fivefold coordination, but it also facilely explains a salient discrepancy in theoretical predictions in otherwise sound ample experimental evidence in the form of epitaxial thin films, paving the way towards rational synthesis of such thin films for optoelectronic applications. On the other hand, we show that the conduction band minimum, important in determining the electrical and optical properties, is a distinctly extended state that can only be properly described within the band picture.
Collapse
Affiliation(s)
- An-An Sun
- Department of Materials Science, Fudan University Shanghai 200433 China
| | - Shang-Peng Gao
- Department of Materials Science, Fudan University Shanghai 200433 China
| | - Gong Gu
- Min H. Kao Department of Electrical Engineering and Computer Science, University of Tennessee Knoxville Tennessee 37996 USA
| |
Collapse
|
2
|
Sain S, Kar A, Mukherjee M, Das D, Pradhan S. Structure, optical and magnetic characterizations of Mn doped ZnS dilute magnetic semiconductor synthesized by mechanical alloying. ADV POWDER TECHNOL 2016. [DOI: 10.1016/j.apt.2016.06.011] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
|
3
|
Poggio S, King J, BelBruno J. Properties of transition metal doped cadmium sulfide hexamers and dodecamers. Chem Phys Lett 2015. [DOI: 10.1016/j.cplett.2015.10.007] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
|
4
|
Zhang J, Rowland C, Liu Y, Xiong H, Kwon S, Shevchenko E, Schaller RD, Prakapenka VB, Tkachev S, Rajh T. Evolution of self-assembled ZnTe magic-sized nanoclusters. J Am Chem Soc 2015; 137:742-9. [PMID: 25531438 DOI: 10.1021/ja509782n] [Citation(s) in RCA: 36] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2023]
Abstract
Three families of ZnTe magic-sized nanoclusters (MSNCs) were obtained exclusively using polytellurides as a tellurium precursor in a one-pot reaction by simply varying the reaction temperature and time only. Different ZnTe MSNCs exhibit different self-assembling or aggregation behavior, owing to their different structure, cluster size, and dipole-dipole interactions. The smallest family of ZnTe MSNCs (F323) does not reveal a crystalline structure and as a result assembles into lamellar triangle plates. Continuous heating of as synthesized ZnTe F323 assemblies resulted in the formation of ZnTe F398 MSNCs with wurzite structure and concomitant transformation into lamellar rectangle assemblies with the organization of nanoclusters along the ⟨002⟩ direction. Further annealing of ZnTe F398 assembled lamellar rectangles leads to full organization of MSNCs in all directions and formation of larger ZnTe F444 NCs that spontaneously form ultrathin nanowires following an oriented attachment mechanism. The key step in control over the size distribution of ZnTe ultrathin nanowires is, in fact, the growth mechanism of ZnTe F398 MSNCs; namely, the step growth mechanism enables formation of more uniform nanowires compared to those obtained by continuous growth mechanism. High yield of ZnTe nanowires is achieved as a result of the wurzite structure of F398 precursor. Transient absorption (TA) measurements show that all three families possess ultrafast dynamics of photogenerated electrons, despite their different crystalline structures.
Collapse
Affiliation(s)
- Jun Zhang
- State Key Laboratory of Heavy Oil Processing, College of Chemical Engineering, China University of Petroleum , Qingdao 266580, P. R. China
| | | | | | | | | | | | | | | | | | | |
Collapse
|
5
|
Wu L, Fan FJ, Gong M, Ge J, Yu SH. Selective epitaxial growth of zinc blende-derivative on wurtzite-derivative: the case of polytypic Cu2CdSn(S(1-x)Se(x))4 nanocrystals. NANOSCALE 2014; 6:3418-3422. [PMID: 24535200 DOI: 10.1039/c3nr04948e] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Polytypic nanocrystals with zinc blende (ZB) cores and wurtzite (WZ) arms, such as tetrapod and octopod nanocrystals, have been widely reported. However, polytypic nanocrystals with WZ cores and ZB arms or ends have been rarely reported. Here, we report a facile, solution-based approach to the synthesis of polytypic Cu2CdSn(S1-xSex)4 (CCTSSe) nanocrystals with ZB-derivative selectively engineered on (000±2)WZ facets of WZ-derived cores. Accordingly, two typical morphologies, i.e., bullet-like nanocrystals with a WZ-derivative core and one ZB-derivative end, and rugby ball-like nanocrystals with a WZ-derivative core and two ZB-derivative ends, can be selectively prepared. The epitaxial growth mechanism is confirmed by the time-dependent experiments. The ratio of rugby ball-like and bullet-like polytypic CCTSSe nanocrystals can be tuned through changing the amount of Cd precursor to adjust the reactivity difference between (0002)WZ and (000-2)WZ facets. These unique polytypic CCTSSe nanocrystals may find applications in energetic semiconducting materials for energy conversion in the future.
Collapse
Affiliation(s)
- Liang Wu
- Division of Nanomaterials & Chemistry, Hefei National Laboratory for Physical Sciences at Microscale, Collaborative Innovation Center of Suzhou Nano Science and Technology, Department of Chemistry, University of Science and Technology of China, China.
| | | | | | | | | |
Collapse
|
6
|
Alvarado SR, Guo Y, Ruberu TPA, Tavasoli E, Vela J. Inorganic chemistry solutions to semiconductor nanocrystal problems. Coord Chem Rev 2014. [DOI: 10.1016/j.ccr.2013.09.001] [Citation(s) in RCA: 32] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
|
7
|
Bechstedt F, Belabbes A. Structure, energetics, and electronic states of III-V compound polytypes. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2013; 25:273201. [PMID: 23778868 DOI: 10.1088/0953-8984/25/27/273201] [Citation(s) in RCA: 37] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Recently several hexagonal polytypes such as 2H, 4H, and 6H have been discovered for conventional III-V semiconductor compounds in addition to the cubic 3C zinc-blende polytype by investigating nanorods grown in the [111] direction in different temperature regimes. Also III-mononitrides crystallizing in the hexagonal 2H wurtzite structure under ambient conditions can be deposited in zinc-blende geometry using various growth techniques. The polytypic crystal structures influence the local electronic properties and the internal electric fields due to the spontaneous polarization in non-cubic crystals.In this paper we give a comprehensive review on the thermodynamic, structural, and electronic properties of twelve Al, Ga, and In antimonides, arsenides, phosphides, and nitrides as derived from ab initio calculations. Their lattice parameters, energetic stability, and characteristic band structure energies are carefully discussed and related to the atomic geometries of the polytypes. Chemical trends are investigated. Band offsets between polytypes and their consequences for heterocrystalline structures are derived. The described properties are discussed in the light of available experimental data and previous computations. Despite several contradictory results in the literature, a unified picture of the III-V polytypes and their heterocrystalline structures is developed.
Collapse
Affiliation(s)
- Friedhelm Bechstedt
- Institut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, D-07743 Jena, Germany.
| | | |
Collapse
|
8
|
Mukherjee P, Gupta BC, Jena P. Electronic and magnetic properties of pristine and transition metal doped ZnTe nanowires. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2013; 25:266003. [PMID: 23756471 DOI: 10.1088/0953-8984/25/26/266003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
We have carried out density functional theory based calculations for understanding the structural, electronic and magnetic properties of pristine and transition metal (TM) doped ZnTe nanowires. Pristine ZnTe nanowires (NWs) turn out to be semiconducting in nature, with the band gap varying with the diameter of the NWs. In Mn-doped ZnTe NWs, the Mn atoms retain a magnetic moment of 5 μB each and couple anti-ferromagnetically. A half metallic ferromagnetic state, although energetically not favorable, is observed arising from a strong hybridization between the d-states of Mn atoms and p-states of Te atoms. Further studies of V- and Sc-doped ZnTe NWs reveal the systems to be anti-ferromagnetic.
Collapse
Affiliation(s)
- Prajna Mukherjee
- Department of Physics, Visva-Bharati, Santiniketan 731235, India.
| | | | | |
Collapse
|
9
|
Gerard C, Das R, Mahadevan P, Sarma DD. Effective Mass-Driven Structural Transition in a Mn-Doped ZnS Nanoplatelet. J Phys Chem Lett 2013; 4:1023-1027. [PMID: 26291371 DOI: 10.1021/jz4002746] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Mn doping in ZnS nanoplatelets has been shown to induce a structural transition from the wurtzite to the zinc blende phase. We trace the origin of this transition to quantum confinement effects, which shift the valence band maximum of the wurtzite and zinc blende polymorphs of ZnS at different rates as a function of the nanocrystal size, arising from different effective hole masses in the two structures. This modifies the covalency associated with Mn incorporation and is reflected in the size-dependent binding energy difference for the two structures.
Collapse
Affiliation(s)
- Celine Gerard
- †Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India
| | - Ruma Das
- ‡Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Center for Basic Sciences, JD Block, Sector III, Salt Lake, Kolkata-700098, India
| | - Priya Mahadevan
- ‡Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Center for Basic Sciences, JD Block, Sector III, Salt Lake, Kolkata-700098, India
| | - D D Sarma
- †Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India
- ∥Council of Scientific and Industrial Research-Network of Institutes for Solar Energy (CSIR-NISE), New-Delhi, India
| |
Collapse
|
10
|
Wang S, You J, Geng B, Cheng Z. Fabrication of ZnSe hexagonal prism with pyramid end through the chemical vapour deposition route. CrystEngComm 2011. [DOI: 10.1039/c003631e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
|
11
|
Liu JZ, Zunger A. Thermodynamic theory of epitaxial alloys: first-principles mixed-basis cluster expansion of (In, Ga)N alloy film. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2009; 21:295402. [PMID: 21828531 DOI: 10.1088/0953-8984/21/29/295402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Epitaxial growth of semiconductor alloys onto a fixed substrate has become the method of choice to make high quality crystals. In the coherent epitaxial growth, the lattice mismatch between the alloy film and the substrate induces a particular form of strain, adding a strain energy term into the free energy of the alloy system. Such epitaxial strain energy can alter the thermodynamics of the alloy, leading to a different phase diagram and different atomic microstructures. In this paper, we present a general-purpose mixed-basis cluster expansion method to describe the thermodynamics of an epitaxial alloy, where the formation energy of a structure is expressed in terms of pair and many-body interactions. With a finite number of first-principles calculation inputs, our method can predict the energies of various atomic structures with an accuracy comparable to that of first-principles calculations themselves. Epitaxial (In, Ga)N zinc-blende alloy grown on GaN(001) substrate is taken as an example to demonstrate the details of the method. Two (210) superlattice structures, (InN)(2)/(GaN)(2) (at x = 0.50) and (InN)(4)/(GaN)(1) (at x = 0.80), are identified as the ground state structures, in contrast to the phase-separation behavior of the bulk alloy.
Collapse
|
12
|
Mohseni PK, LaPierre RR. A growth interruption technique for stacking fault-free nanowire superlattices. NANOTECHNOLOGY 2009; 20:025610. [PMID: 19417279 DOI: 10.1088/0957-4484/20/2/025610] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
An experimental approach to achieving phase purity in nanowires through molecular beam epitaxy growth is presented. Superlattice heterostructured nanowires were grown, consisting of alternating layers of GaAsP and GaP. The observed core-multishell heterostructure, extending axially and radially, is attributed to simultaneous Au-assisted vertical growth and diffusion-limited radial growth along lateral nanowire facets. Growth interruptions at the GaAsP/GaP interfaces allowed for the elimination of stacking faults and the growth of nanowires with a single-crystalline wurtzite phase.
Collapse
Affiliation(s)
- Parsian K Mohseni
- Department of Engineering Physics, Center for Emerging Device Technologies, McMaster University, Hamilton, ON, Canada
| | | |
Collapse
|
13
|
Wang J, Yang Q. A developed Ullmann reaction to III–V semiconductor nanocrystals in sealed vacuum tubes. Dalton Trans 2008:6060-6. [DOI: 10.1039/b809442j] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
|
14
|
Mitzi DB. Polymorphic One-Dimensional (N2H4)2ZnTe: Soluble Precursors for the Formation of Hexagonal or Cubic Zinc Telluride. Inorg Chem 2005; 44:7078-86. [PMID: 16180870 DOI: 10.1021/ic050833w] [Citation(s) in RCA: 46] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Two hydrazine zinc(II) telluride polymorphs, (N2H4)2ZnTe, have been isolated, using ambient-temperature solution-based techniques, and the crystal structures determined: alpha-(N2H4)2ZnTe (1) [P21, a = 7.2157(4) Angstroms, b = 11.5439(6) Angstroms, c = 7.3909(4) Angstroms, beta = 101.296(1) degrees, Z = 4] and beta-(N2H4)2ZnTe (2) [Pn, a = 8.1301(5) Angstroms, b = 6.9580(5) Angstroms, c = 10.7380(7) Angstroms, beta = 91.703(1) degrees, Z = 4]. The zinc atoms in 1 and 2 are tetrahedrally bonded to two terminal hydrazine molecules and two bridging tellurium atoms, leading to the formation of extended one-dimensional (1-D) zinc telluride chains, with different chain conformations and packings distinguishing the two polymorphs. Thermal decomposition of (N2H4)2ZnTe first yields crystalline wurtzite (hexagonal) ZnTe at temperatures as low as 200 degrees C, followed by the more stable zinc blende (cubic) form at temperatures above 350 degrees C. The 1-D polymorphs are soluble in hydrazine and can be used as convenient precursors for the low-temperature solution processing of p-type ZnTe semiconducting films.
Collapse
Affiliation(s)
- David B Mitzi
- TJ Watson Research Center, IBM, Yorktown Heights, New York 10598, USA.
| |
Collapse
|
15
|
Dalpian GM, Wei SH. Hole-mediated stabilization of cubic GaN. PHYSICAL REVIEW LETTERS 2004; 93:216401. [PMID: 15601036 DOI: 10.1103/physrevlett.93.216401] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2004] [Indexed: 05/24/2023]
Abstract
We propose here a new approach to stabilize the cubic zinc-blende (ZB) phase by incorporation of impurities into a compound that has a hexagonal wurtzite (WZ) ground state. For GaN, we suggest that this can be achieved by adding 3d acceptors such as Zn, Mn, or Cu because the p-d repulsion between the 3d impurity levels and the valence band maximum is larger in the ZB phase than in the WZ phase. This makes the top of the valence states of the ZB structure higher than that of the WZ structure. As holes are created at the top of the valence states by the impurities, it will cost less energy for the holes to be created in the ZB structure, thus stabilizing this phase. Our first-principles total energy calculations confirm this novel idea.
Collapse
|
16
|
Joswig JO, Seifert G, Niehaus TA, Springborg M. Optical Properties of Cadmium Sulfide Clusters. J Phys Chem B 2003. [DOI: 10.1021/jp026752s] [Citation(s) in RCA: 45] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Jan-Ole Joswig
- Physikalische Chemie, Universität des Saarlandes, D-66123 Saarbrücken, Germany, Institut für Physikalische Chemie und Elektrochemie, Technische Universität Dresden, D-01062 Dresden, Germany, and Fachbereich 6−Physik, Universität-GH Paderborn, D-33098 Paderborn, Germany
| | - Gotthard Seifert
- Physikalische Chemie, Universität des Saarlandes, D-66123 Saarbrücken, Germany, Institut für Physikalische Chemie und Elektrochemie, Technische Universität Dresden, D-01062 Dresden, Germany, and Fachbereich 6−Physik, Universität-GH Paderborn, D-33098 Paderborn, Germany
| | - Thomas A. Niehaus
- Physikalische Chemie, Universität des Saarlandes, D-66123 Saarbrücken, Germany, Institut für Physikalische Chemie und Elektrochemie, Technische Universität Dresden, D-01062 Dresden, Germany, and Fachbereich 6−Physik, Universität-GH Paderborn, D-33098 Paderborn, Germany
| | - Michael Springborg
- Physikalische Chemie, Universität des Saarlandes, D-66123 Saarbrücken, Germany, Institut für Physikalische Chemie und Elektrochemie, Technische Universität Dresden, D-01062 Dresden, Germany, and Fachbereich 6−Physik, Universität-GH Paderborn, D-33098 Paderborn, Germany
| |
Collapse
|
17
|
Roy S, Springborg M. Theoretical Study of Structural and Electronic Properties of Naked Stoichiometric and Nonstoichiometric Indium Phosphide Clusters. J Phys Chem B 2003. [DOI: 10.1021/jp0271312] [Citation(s) in RCA: 30] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Sudip Roy
- Physikalische Chemie, Universität des Saarlandes, D-66123 Saarbrücken, Germany
| | - Michael Springborg
- Physikalische Chemie, Universität des Saarlandes, D-66123 Saarbrücken, Germany
| |
Collapse
|
18
|
Flynn CE, Mao C, Hayhurst A, Williams JL, Georgiou G, Iverson B, Belcher AM. Synthesis and organization of nanoscale II–VI semiconductor materials using evolved peptide specificity and viral capsid assembly. ACTA ACUST UNITED AC 2003. [DOI: 10.1039/b307593a] [Citation(s) in RCA: 152] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
|
19
|
|
20
|
Joswig JO, Springborg M, Seifert G. Structural and Electronic Properties of Cadmium Sulfide Clusters. J Phys Chem B 2000. [DOI: 10.1021/jp993512c] [Citation(s) in RCA: 94] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Jan-Ole Joswig
- Fakultät für Chemie, Universität Konstanz, D-78457 Konstanz, Germany, and Fachbereich 6Physik, Universität-GH Paderborn, D-33098 Paderborn, Germany
| | - Michael Springborg
- Fakultät für Chemie, Universität Konstanz, D-78457 Konstanz, Germany, and Fachbereich 6Physik, Universität-GH Paderborn, D-33098 Paderborn, Germany
| | - Gotthard Seifert
- Fakultät für Chemie, Universität Konstanz, D-78457 Konstanz, Germany, and Fachbereich 6Physik, Universität-GH Paderborn, D-33098 Paderborn, Germany
| |
Collapse
|
21
|
Verma HC, John GC, Singh VA. Vibrational spectra of defects in silicon: An orbital radii approach. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:9831-9837. [PMID: 9982543 DOI: 10.1103/physrevb.53.9831] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
22
|
Petalas J, Logothetidis S, Boultadakis S, Alouani M, Wills JM. Optical and electronic-structure study of cubic and hexagonal GaN thin films. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:8082-8091. [PMID: 9979806 DOI: 10.1103/physrevb.52.8082] [Citation(s) in RCA: 37] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
23
|
Yeh CY, Wei SH, Zunger A. Relationships between the band gaps of the zinc-blende and wurtzite modifications of semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:2715-2718. [PMID: 9976506 DOI: 10.1103/physrevb.50.2715] [Citation(s) in RCA: 41] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
24
|
Murayama M, Nakayama T. Chemical trend of band offsets at wurtzite/zinc-blende heterocrystalline semiconductor interfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:4710-4724. [PMID: 10011399 DOI: 10.1103/physrevb.49.4710] [Citation(s) in RCA: 83] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
25
|
Miwa K, Fukumoto A. First-principles calculation of the structural, electronic, and vibrational properties of gallium nitride and aluminum nitride. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:7897-7902. [PMID: 10006974 DOI: 10.1103/physrevb.48.7897] [Citation(s) in RCA: 102] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
26
|
Fiorentini V, Methfessel M, Scheffler M. Electronic and structural properties of GaN by the full-potential linear muffin-tin orbitals method: The role of the d electrons. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:13353-13362. [PMID: 10005643 DOI: 10.1103/physrevb.47.13353] [Citation(s) in RCA: 86] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
27
|
Yeh CY, Lu ZW, Froyen S, Zunger A. Zinc-blende-wurtzite polytypism in semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:10086-10097. [PMID: 10002848 DOI: 10.1103/physrevb.46.10086] [Citation(s) in RCA: 359] [Impact Index Per Article: 11.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|