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Chiu MH, Zhang C, Shiu HW, Chuu CP, Chen CH, Chang CYS, Chen CH, Chou MY, Shih CK, Li LJ. Determination of band alignment in the single-layer MoS2/WSe2 heterojunction. Nat Commun 2015; 6:7666. [PMID: 26179885 PMCID: PMC4518320 DOI: 10.1038/ncomms8666] [Citation(s) in RCA: 219] [Impact Index Per Article: 24.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2015] [Accepted: 05/29/2015] [Indexed: 12/23/2022] Open
Abstract
The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.
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Affiliation(s)
- Ming-Hui Chiu
- Institute of Atomic and Molecular Sciences, Academia Sinica, No. 1, Roosevelt Road, Sec. 4, Taipei 10617, Taiwan
| | - Chendong Zhang
- Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA
| | - Hung-Wei Shiu
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Chih-Piao Chuu
- Institute of Atomic and Molecular Sciences, Academia Sinica, No. 1, Roosevelt Road, Sec. 4, Taipei 10617, Taiwan
| | - Chang-Hsiao Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica, No. 1, Roosevelt Road, Sec. 4, Taipei 10617, Taiwan
| | - Chih-Yuan S. Chang
- Institute of Atomic and Molecular Sciences, Academia Sinica, No. 1, Roosevelt Road, Sec. 4, Taipei 10617, Taiwan
| | - Chia-Hao Chen
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Mei-Yin Chou
- Institute of Atomic and Molecular Sciences, Academia Sinica, No. 1, Roosevelt Road, Sec. 4, Taipei 10617, Taiwan
- School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
- Deapartment of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Chih-Kang Shih
- Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA
| | - Lain-Jong Li
- Institute of Atomic and Molecular Sciences, Academia Sinica, No. 1, Roosevelt Road, Sec. 4, Taipei 10617, Taiwan
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
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dell'Orto T, Almeida J, Terrasi A, Marsi M, Coluzza C, Margaritondo G, Perfetti P. Anomalous Au/Si barrier modification by a CaF2 intralayer. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:18189-18193. [PMID: 9976252 DOI: 10.1103/physrevb.50.18189] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Bratina G, Vanzetti L, Sorba L, Biasiol G, Franciosi A, Peressi M, Baroni S. Lack of band-offset transitivity for semiconductor heterojunctions with polar orientation: ZnSe-Ge(001), Ge-GaAs(001), and ZnSe-GaAs(001). PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:11723-11729. [PMID: 9975308 DOI: 10.1103/physrevb.50.11723] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Priester C, Foulon Y, Allan G. Role of localized interface states at type-II heterojunctions. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:2919-2922. [PMID: 10011131 DOI: 10.1103/physrevb.49.2919] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Nicolini R, Vanzetti L, Mula G, Bratina G, Sorba L, Franciosi A, Peressi M, Baroni S, Resta R, Baldereschi A, Angelo JE, Gerberich WW. Local interface composition and band discontinuities in heterovalent heterostructures. PHYSICAL REVIEW LETTERS 1994; 72:294-297. [PMID: 10056108 DOI: 10.1103/physrevlett.72.294] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Kohleick R, Förster A, Lüth H. Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:15138-15143. [PMID: 10008047 DOI: 10.1103/physrevb.48.15138] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Bratina G, Sorba L, Antonini A, Ceccone G, Nicolini R, Biasiol G, Franciosi A, Angelo JE, Gerberich WW. Band offsets and strain in CdTe-GaAs heterostructures. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:8899-8910. [PMID: 10007109 DOI: 10.1103/physrevb.48.8899] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Chambers SA, Loebs VA. Structure and band bending at Si/GaAs(001)-(2 x 4) interfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:9513-9522. [PMID: 10005016 DOI: 10.1103/physrevb.47.9513] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Marsi M, Houdré R, Rudra A, Ilegems M, Gozzo F, Coluzza C, Margaritondo G. Artificial band discontinuities at GaAs homojunctions. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:6455-6459. [PMID: 10004612 DOI: 10.1103/physrevb.47.6455] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Sorba L, Bratina G, Antonini A, Franciosi A, Tapfer L, Migliori A, Merli P. Structure and local dipole of Si interface layers in AlAs-GaAs heterostructures. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:6834-6845. [PMID: 10002385 DOI: 10.1103/physrevb.46.6834] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Scamarcio G, Spagnolo V, Molinari E, Tapfer L, Sorba L, Bratina G, Franciosi A. Phonons in Si/GaAs superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:7296-7299. [PMID: 10002457 DOI: 10.1103/physrevb.46.7296] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Biasiol G, Sorba L, Bratina G, Nicolini R, Franciosi A, Peressi M, Baroni S, Resta R, Baldereschi A. Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures. PHYSICAL REVIEW LETTERS 1992; 69:1283-1286. [PMID: 10047174 DOI: 10.1103/physrevlett.69.1283] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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