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Jia C, Chen Y, Guo Y, Liu X, Yang S, Zhang W, Wang Z. Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy. NANOSCALE RESEARCH LETTERS 2011; 6:316. [PMID: 21711842 PMCID: PMC3211403 DOI: 10.1186/1556-276x-6-316] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/10/2011] [Accepted: 04/08/2011] [Indexed: 05/31/2023]
Abstract
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices.
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Affiliation(s)
- Caihong Jia
- Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing 100083, PR China
- Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics Electronics, Henan University, Kaifeng 475004, PR China
| | - Yonghai Chen
- Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing 100083, PR China
| | - Yan Guo
- Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing 100083, PR China
| | - Xianglin Liu
- Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing 100083, PR China
| | - Shaoyan Yang
- Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing 100083, PR China
| | - Weifeng Zhang
- Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics Electronics, Henan University, Kaifeng 475004, PR China
| | - Zhanguo Wang
- Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing 100083, PR China
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Lundström T, Dalfors J, Holtz PO, Zhao QX, Monemar B, Landgren G, Wallin J. Self-consistent calculations and magnetoluminescence studies of strained InP/InxGa1-xAs heterojunctions. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:10637-10643. [PMID: 9984860 DOI: 10.1103/physrevb.54.10637] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Krebs O, Voisin P. Giant Optical Anisotropy of Semiconductor Heterostructures with No Common Atom and the Quantum-Confined Pockels Effect. PHYSICAL REVIEW LETTERS 1996; 77:1829-1832. [PMID: 10063182 DOI: 10.1103/physrevlett.77.1829] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Picozzi S, Continenza A, Freeman AJ. Influence of growth direction and strain conditions on the band lineup at GaSb/InSb and InAs/InSb interfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:10852-10857. [PMID: 9982655 DOI: 10.1103/physrevb.53.10852] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Franceschetti A, Wei SH, Zunger A. Type-II-->type-I transition in (GaX)n/(InX)n (001) superlattices (X=P, Sb) as a function of period n. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:8094-8097. [PMID: 9974819 DOI: 10.1103/physrevb.50.8094] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Shanabrook BV, Bennett BR. Planar vibrational modes as probes of interface structure. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:1695-1700. [PMID: 9976357 DOI: 10.1103/physrevb.50.1695] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Symons DM, Lakrimi M, Warburton RJ, Nicholas RJ, Mason NJ, Walker PJ, Eremets MI, Hill G. [001]- and piezoelectric-[111]-oriented InAs/GaSb structures under hydrostatic pressure. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:16614-16621. [PMID: 10010820 DOI: 10.1103/physrevb.49.16614] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Priester C, Foulon Y, Allan G. Role of localized interface states at type-II heterojunctions. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:2919-2922. [PMID: 10011131 DOI: 10.1103/physrevb.49.2919] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Armelles G, Muñoz MC, Alonso MI. Band-edge states and valence-band offset of GaP/InP strained-layer superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:16299-16304. [PMID: 10006055 DOI: 10.1103/physrevb.47.16299] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Böhrer J, Krost A, Wolf T, Bimberg D. Band offsets and transitivity of In1-xGaxAs/In1-yAlyAs/InP heterostructures. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:6439-6443. [PMID: 10004609 DOI: 10.1103/physrevb.47.6439] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Qteish A, Needs RJ. Valence-band-offset transitivity at HgTe/CdTe, HgTe/InSb, and CdTe/InSb interfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:3714-3717. [PMID: 10006474 DOI: 10.1103/physrevb.47.3714] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Bertho D, Jouanin C. Alloy effects on the band offsets of ZnSxSe1-x-ZnSe heterostructures. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:2184-2190. [PMID: 10006257 DOI: 10.1103/physrevb.47.2184] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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