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For: Yang Y, Luo YS, Weaver JH. Scanning-tunneling-microscopy study of Ge/GaAs(110). II. Coalescence and layer-by-layer growth. Phys Rev B Condens Matter 1992;46:15395-15403. [PMID: 10003658 DOI: 10.1103/physrevb.46.15395] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

For:	Yang Y, Luo YS, Weaver JH. Scanning-tunneling-microscopy study of Ge/GaAs(110). II. Coalescence and layer-by-layer growth. Phys Rev B Condens Matter 1992;46:15395-15403. [PMID: 10003658 DOI: 10.1103/physrevb.46.15395] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

Number	Cited by Other Article(s)
1	Honke R, Fritsch J, Pavone P, Schröder U. Electronic, structural, and dynamical properties of the GaAs(110):Ge surface. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;53:9923-9929. [PMID: 9982556 DOI: 10.1103/physrevb.53.9923] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023] Abstract Collapse Key Words Collapse MESH Headings Collapse Grants Collapse Affiliation(s) Collapse
2	Brake J, Wang X, Pechman RJ, Weaver JH. Enhanced epitaxial growth on substrates modified by ion sputtering: Ge on GaAs(110). PHYSICAL REVIEW. B, CONDENSED MATTER 1996;53:11170-11175. [PMID: 9982691 DOI: 10.1103/physrevb.53.11170] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023] Abstract Collapse Key Words Collapse MESH Headings Collapse Grants Collapse Affiliation(s) Collapse