NiO(100) valence-band density of states during hydrogen reduction

Structure of Ni(OH)2 intermediates determines the efficiency of NiO-based photocathodes – a case study using novel mesoporous NiO nanostars

NiO nanostructures prepared from β-Ni(OH)₂ intermediates exhibit favorable electronic properties for functional photocathodes for solar energy conversion devices.

Enabling Efficient Creation of Long-Lived Charge-Separation on Dye-Sensitized NiO Photocathodes

The hole-injection and recombination photophysics for NiO sensitized with RuP ([Ru^II(bpy)₂(4,4'-(PO₃H₂)₂-bpy)]²⁺) are explored. Ultrafast transient absorption (TA) measurements performed with an external electrochemical bias reveal the efficiency for productive hole-injection, that is, quenching of the dye excited state that results in a detectable charge-separated electron-hole pair, is linearly dependent on the electronic occupation of intragap states in the NiO film. Population of these states via a negative applied potential increases the efficiency from 0% to 100%. The results indicate the primary loss mechanism for dye-sensitized NiO is rapid nongeminate recombination enabled by the presence of latent holes in the surface of the NiO film. Our findings suggest a new design paradigm for NiO photocathodes and devices centered on the avoidance of this recombination pathway.

The Valence Electronic Structure of Co3O4: Is It a Charge-Transfer Insulator?

Despite the relevance to a variety of materials applications, the electronic and bonding properties of spinel transition metal oxides are not well established. We report here the slow oxidation of CoO(100) to Co3O4, studied by photoemission (UPS and XPS), low energy electron diffraction (LEED) and high resolution electron energy loss spectroscopy (HREELS) with the aim of elucidating the valence band electronic structure of the Co3O4 spinel. The original Mott insulator picture of the parent CoO substrate has been revised in recent times, after careful analyses and extensive debate, to the more detailed charge-transfer insulator model which includes some admixture of oxygen 2p levels in the 3d-derived valence band. No equivalent band structure analysis has been performed on the spinel oxides, perhaps in part because of the greater complexity of the 56-atom unit cell with two different cation lattice sites and oxidation states. In this study, we determine the valence band structure of the spinel oxide and address the question of whether Co3O4 can be modeled as a charge-transfer insulator in analogy with its closely related rocksalt substrate.

Adsorption of Bromobenzene on Periodically Stepped and Nonstepped NiO(100)

Periodically stepped NiO(100) surfaces were prepared and characterized with low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and temperature-programmed desorption (TPD). Two vicinal NiO(100) single-crystal samples were cut, oriented, and polished with regular, repeating monatomic steps in six-atom or seven-atom terrace widths. LEED diffraction patterns showed characteristic spot-splitting that corresponded to the appropriate terrace and step height. The nonstepped and stepped NiO(100) surfaces were exposed to bromobenzene at 130 K first to produce a molecularly adsorbed monolayer species and then, with increased exposure, a multilayer adsorbate. An additional adsorbate species, observed only on the stepped surfaces, was found to desorb at 145 K by two competing pathways. One pathway, which saturates at low coverages, leaves bromine behind on the substrate and results in dehalogenation. The other pathway yields molecular desorption at 145 K, but is only observed in detectable amounts after the dehalogenation pathway is saturated. On both stepped and nonstepped NiO(100) substrates, adsorbed bromine resulting from dehalogenation processes appears as nickel bromide, determined by the Br 3p XPS data.