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Xia H, Li TX, Tang HJ, Zhu L, Li X, Gong HM, Lu W. Nanoscale imaging of the photoresponse in PN junctions of InGaAs infrared detector. Sci Rep 2016; 6:21544. [PMID: 26892069 PMCID: PMC4759585 DOI: 10.1038/srep21544] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/25/2015] [Accepted: 01/26/2016] [Indexed: 12/04/2022] Open
Abstract
Electronic layout, such as distributions of charge carriers and electric field, in PN junction is determinant for the photovoltaic devices to realize their functionality. Considerable efforts have been dedicated to the carrier profiling of this specific region with Scanning Probe Microscope, yet reliable analysis was impeded by the difficulty in resolving carriers with high mobility and the unclear surface effect, particularly on compound semiconductors. Here we realize nanometer Scanning Capacitance Microscopic study on the cross-section of InGaAs/InP photodetctors with the featured dC/dV layout of PN junction unveiled for the first time. It enables us to probe the photo-excited minority carriers in junction region and diagnose the performance deficiency of the diode devices. This work provides an illuminating insight into the PN junction for assessing its basic capability of harvesting photo-carriers as well as blocking leakage current in nanoscopic scale.
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Affiliation(s)
- Hui Xia
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 YuTian Road, Shanghai 200083, People's Republic of China
| | - Tian-Xin Li
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 YuTian Road, Shanghai 200083, People's Republic of China
| | - Heng-Jing Tang
- Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 YuTian Road, Shanghai 200083, People's Republic of China
| | - Liang Zhu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 YuTian Road, Shanghai 200083, People's Republic of China
| | - Xue Li
- Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 YuTian Road, Shanghai 200083, People's Republic of China
| | - Hai-Mei Gong
- Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 YuTian Road, Shanghai 200083, People's Republic of China
| | - Wei Lu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 YuTian Road, Shanghai 200083, People's Republic of China
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Kowalski B, Linke H, Omling P. Spin-resonance determination of the electron effective g value of In0.53Ga0.47As. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:8551-8555. [PMID: 9984530 DOI: 10.1103/physrevb.54.8551] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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