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Jenichen A, Engler C. Etching of GaAs(100) Surfaces by Cl2: Quantum Chemical Calculations on the Mechanisms. J Phys Chem B 2000. [DOI: 10.1021/jp0007383] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023]
Affiliation(s)
- Arndt Jenichen
- Institute for Surface Modification, Permoserstrasse 15, D-04303 Leipzig, Germany, and University Leipzig, Wilhelm-Ostwald-Institute of Physical and Theoretical Chemistry, Linnéstrasse 2, D-04103 Leipzig, Germany
| | - Cornelia Engler
- Institute for Surface Modification, Permoserstrasse 15, D-04303 Leipzig, Germany, and University Leipzig, Wilhelm-Ostwald-Institute of Physical and Theoretical Chemistry, Linnéstrasse 2, D-04103 Leipzig, Germany
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Mochizuki Y, Takada T, Sasaoka C, Usui A, Miyoshi E, Sakai Y. Theoretical study of As2 desorption from the Ga dangling-bond site. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:4658-4667. [PMID: 10011392 DOI: 10.1103/physrevb.49.4658] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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