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Otnes G, Barrigón E, Sundvall C, Svensson KE, Heurlin M, Siefer G, Samuelson L, Åberg I, Borgström MT. Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements. NANO LETTERS 2018; 18:3038-3046. [PMID: 29701974 DOI: 10.1021/acs.nanolett.8b00494] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.
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Affiliation(s)
- Gaute Otnes
- Solid State Physics and NanoLund , Lund University , P.O. Box 118, SE-221 00 Lund , Sweden
| | - Enrique Barrigón
- Solid State Physics and NanoLund , Lund University , P.O. Box 118, SE-221 00 Lund , Sweden
| | | | | | - Magnus Heurlin
- Solid State Physics and NanoLund , Lund University , P.O. Box 118, SE-221 00 Lund , Sweden
- SolVoltaics AB , Scheelevägen 22 , SE-223 63 Lund , Sweden
| | - Gerald Siefer
- Fraunhofer ISE , Heidenhofstrasse 2 , D-79110 Freiburg , Germany
| | - Lars Samuelson
- Solid State Physics and NanoLund , Lund University , P.O. Box 118, SE-221 00 Lund , Sweden
| | - Ingvar Åberg
- SolVoltaics AB , Scheelevägen 22 , SE-223 63 Lund , Sweden
| | - Magnus T Borgström
- Solid State Physics and NanoLund , Lund University , P.O. Box 118, SE-221 00 Lund , Sweden
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Chen X, Jung J, Qi Z, Zhu L, Park S, Zhu L, Yoon E, Shao J. Infrared photoreflectance investigation of resonant levels and band edge structure in InSb. OPTICS LETTERS 2015; 40:5295-5298. [PMID: 26565858 DOI: 10.1364/ol.40.005295] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Temperature-dependent infrared photoreflectance (PR) is employed on InSb for clarifying resonant levels (RLs) and band edge structure. Abundant PR features are well resolved around the bandgap and are verified to be of electronic inter-level transitions rather than the Franz-Keldysh oscillations. The evolution of the critical energies with temperature reveals the nature of the PR processes, from which one acceptor RL, two donor RLs, and a shallow acceptor level are quantitatively identified, and a detailed band edge structure is derived. The results show that temperature-dependent infrared PR analysis can serve as an efficient vehicle for clarifying both bound and resonant levels in semiconductors.
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Joyce HJ, Wong-Leung J, Yong CK, Docherty CJ, Paiman S, Gao Q, Tan HH, Jagadish C, Lloyd-Hughes J, Herz LM, Johnston MB. Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy. NANO LETTERS 2012; 12:5325-30. [PMID: 22962963 DOI: 10.1021/nl3026828] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Using transient terahertz photoconductivity measurements, we have made noncontact, room temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP nanowires exhibited a very long photoconductivity lifetime of over 1 ns, and carrier lifetimes were remarkably insensitive to surface states despite the large nanowire surface area-to-volume ratio. An exceptionally low surface recombination velocity (170 cm/s) was recorded at room temperature. These results suggest that InP nanowires are prime candidates for optoelectronic devices, particularly photovoltaic devices, without the need for surface passivation. We found that the carrier mobility is not limited by nanowire diameter but is strongly limited by the presence of planar crystallographic defects such as stacking faults in these predominantly wurtzite nanowires. These findings show the great potential of very narrow InP nanowires for electronic devices but indicate that improvements in the crystallographic uniformity of InP nanowires will be critical for future nanowire device engineering.
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Affiliation(s)
- Hannah J Joyce
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, United Kingdom.
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Paiman S, Gao Q, Tan HH, Jagadish C, Pemasiri K, Montazeri M, Jackson HE, Smith LM, Yarrison-Rice JM, Zhang X, Zou J. The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires. NANOTECHNOLOGY 2009; 20:225606. [PMID: 19436086 DOI: 10.1088/0957-4484/20/22/225606] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
InP nanowires were grown on 111B InP substrates by metal-organic chemical vapour deposition in the presence of colloidal gold particles as catalysts. Transmission electron microscopy and photoluminescence measurements were carried out to investigate the effects of V/III ratio and nanowire diameter on structural and optical properties. Results show that InP nanowires grow preferably in the wurtzite crystal structure than the zinc blende crystal structure with increasing V/III ratio or decreasing diameter. Additionally, time-resolved photoluminescence (TRPL) studies have revealed that wurtzite nanowires show longer recombination lifetimes of approximately 2500 ps with notably higher quantum efficiencies.
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Affiliation(s)
- S Paiman
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200, Australia.
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Liu Z, Sun K, Jian WB, Xu D, Lin YF, Fang J. Soluble InP and GaP Nanowires: Self-Seeded, Solution-Liquid-Solid Synthesis and Electrical Properties. Chemistry 2009; 15:4546-52. [DOI: 10.1002/chem.200900190] [Citation(s) in RCA: 18] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
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Chen WM, Buyanova IA, Buyanov AV, Lundström T, Bi WG, Tu CW. Intrinsic Doping: A New Approach for n-Type Modulation Doping in InP-Based Heterostructures. PHYSICAL REVIEW LETTERS 1996; 77:2734-2737. [PMID: 10062032 DOI: 10.1103/physrevlett.77.2734] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Yu PW, Talwar DN, Hou HQ, Tu CW. 1.356-eV exciton bound to the deep antisite double donor PIn in InP grown by gas-source molecular-beam epitaxy. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:10735-10738. [PMID: 10009903 DOI: 10.1103/physrevb.49.10735] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Seitsonen AP, Virkkunen R, Puska MJ, Nieminen RM. Indium and phosphorus vacancies and antisites in InP. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:5253-5262. [PMID: 10011476 DOI: 10.1103/physrevb.49.5253] [Citation(s) in RCA: 24] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Crookham HC, Glaser ER, Henry RL, Kennedy TA. Optically detected magnetic resonance in zinc-doped indium phosphide under uniaxial stress. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:14157-14160. [PMID: 10007830 DOI: 10.1103/physrevb.48.14157] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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