First-principles calculation of the electronic structure of the wurtzite semiconductors ZnO and ZnS

Modulating the growth of chemically deposited ZnO nanowires and the formation of nitrogen- and hydrogen-related defects using pH adjustment

ZnO nanowires (NWs) grown by chemical bath deposition (CBD) have received great interest for nanoscale engineering devices, but their formation in aqueous solution containing many impurities needs to be carefully addressed. In particular, the pH of the CBD solution and its effect on the formation mechanisms of ZnO NWs and of nitrogen- and hydrogen-related defects in their center are still unexplored. By adjusting its value in a low- and high-pH region, we show the latent evolution of the morphological and optical properties of ZnO NWs, as well as the modulated incorporation of nitrogen- and hydrogen-related defects in their center using Raman and cathodoluminescence spectroscopy. The increase in pH is related to the increase in the oxygen chemical potential (μ _O), for which the formation energy of hydrogen in bond-centered sites (H_BC) and V_Zn-N_O-H defect complexes is found to be unchanged, whereas the formation energy of zinc vacancy (V_Zn) and zinc vacancy-hydrogen (V_Zn-nH) complexes steadily decreases as shown from density-functional theory calculations. Revealing that these V_Zn-related defects are energetically favorable to form as μ _O is increased, ZnO NWs grown in the high-pH region are found to exhibit a higher density of V_Zn-nH defect complexes than ZnO NWs grown in the low-pH region. Annealing at 450 °C under an oxygen atmosphere helps tuning the optical properties of ZnO NWs by reducing the density of H_BC and V_Zn-related defects, while activating the formation of V_Zn-N_O-H defect complexes. These findings show the influence of pH on the nature of Zn(ii) species, the electrostatic interactions between these species and ZnO NW surfaces, and the formation energy of the involved defects. They emphasize the crucial role of the pH of the CBD solution and open new possibilities for simultaneously engineering the morphology of ZnO NWs and the formation of nitrogen- and hydrogen-related defects.

Pressure-induced bandgap engineering and photoresponse enhancement of wurtzite CuInS2 nanocrystals

Wurtzite CuInS₂ exhibits great potential for optoelectronic applications because of its excellent optical properties and good stability. However, exploring effective strategies to simultaneously optimize its optical and photoelectrical properties remains a challenge. In this study, the bandgap of wurtzite CuInS₂ nanocrystals is successfully extended and the photocurrent is enhanced synchronously using external pressure. The bandgap of wurtzite CuInS₂ increases with pressure and reaches an optimal value (1.5 eV) for photovoltaic solar energy conversion at about 5.9 GPa. Surprisingly, the photocurrent simultaneously increases nearly 3-fold and reaches the maximum value at this critical pressure. Theoretical calculation indicates that the pressure-induced bandgap extention in wurtzite CuInS₂ may be attributed to an increased charge density and ionic polarization between the In-S atoms. The photocurrent preserves a relatively high photoresponse even at 8.8 GPa, but almost disappears above 10.3 GPa. The structural evolution demonstrates that CuInS₂ undergoes a phase transformation from the wurtzite phase (P6₃mc) to the rock salt phase (Fm3̄m) at about 10.3 GPa, which resulted in a direct to indirect bandgap transition and fianlly caused a dramatic reduction in photocurrent. These results not only map a new route toward further increase in the photoelectrical performance of wurtzite CuInS₂, but also advance the current research of A^I-B^III-CVI2 materials.

Oxygen vacancy in ZnO-phase: pseudohybrid Hubbard density functional study

The study of zinc oxide, within the homogeneous electron gas approximation, results in overhybridization of zinc 3d shell with oxygen 2p shell, a problem shown for most transition metal chalcogenides. This problem can be partially overcome by using LDA +U(or, GGA +U) methodology. However, in contrast to the zinc 3d orbital, Hubbard type correction is typically excluded for the oxygen 2p orbital. In this work, we provide results of electronic structure calculations of an oxygen vacancy in ZnO supercell fromab initioperspective, with two Hubbard type corrections,UZn-3dandUO-2p. The results of our numerical simulations clearly reveal that the account ofUO-2phas a significant impact on the properties of bulk ZnO, in particular the relaxed lattice constants, effective mass of charge carriers as well as the bandgap. For a set of validated values ofUZn-3dandUO-2pwe demonstrate the appearance of a localized state associated with the oxygen vacancy positioned in the bandgap of the ZnO supercell. Our numerical findings suggest that the defect state is characterized by the highest overlap with the conduction band states as obtained in the calculations with no Hubbard-type correction included. We argue that the electronic density of the defect state is primarily determined by Zn atoms closest to the vacancy.

Enhanced moisture sensing properties of a nanostructured ZnO coated capacitive sensor

This work reports the enhancement in sensitivity of a simple and low-cost capacitive moisture sensor using a thin film of zinc oxide (ZnO) nanoparticles on electrodes.

Composition dependent band offsets of ZnO and its ternary alloys

We report the calculated fundamental band gaps of wurtzite ternary alloys Zn_1-xM_xO (M = Mg, Cd) and the band offsets of the ZnO/Zn_1-xM_xO heterojunctions, these II-VI materials are important for electronics and optoelectronics. Our calculation is based on density functional theory within the linear muffin-tin orbital (LMTO) approach where the modified Becke-Johnson (MBJ) semi-local exchange is used to accurately produce the band gaps, and the coherent potential approximation (CPA) is applied to deal with configurational average for the ternary alloys. The combined LMTO-MBJ-CPA approach allows one to simultaneously determine both the conduction band and valence band offsets of the heterojunctions. The calculated band gap data of the ZnO alloys scale as E_g = 3.35 + 2.33x and E_g = 3.36 - 2.33x + 1.77x² for Zn_1-xMg_xO and Zn_1-xCd_xO, respectively, where x being the impurity concentration. These scaling as well as the composition dependent band offsets are quantitatively compared to the available experimental data. The capability of predicting the band parameters and band alignments of ZnO and its ternary alloys with the LMTO-CPA-MBJ approach indicate the promising application of this method in the design of emerging electronics and optoelectronics.

Band Gap Reduction in ZnO and ZnS by Creating Layered ZnO/ZnS Heterostructures

Wurtzite-type zinc oxide (ZnO) and zinc sulfide (ZnS) have electronic band gaps that are too large for light-harvesting applications. Using screened hybrid density-functional methods, we show that the band gaps of ZnO and ZnS can be dramatically reduced by creating layered ZnO/ZnS bulk heterostructures in which m contiguous monolayers of ZnO alternate with n contiguous monolayers of ZnS. In particular, the band gap decreases by roughly 40% upon substitution of every tenth monolayer of ZnS with a monolayer of ZnO (and vice versa) and becomes as low as 1.5 eV for heterostructures with m = 3 to m = 9 contiguous monolayers of ZnO alternating with n = 10 - m monolayers of ZnS. The predicted band gaps of layered ZnO/ZnS heterostructures span the entire visible spectrum, which makes these materials suitable for photovoltaic device engineering.

Study on the interface electronic states of chemically modified ZnO nanowires

In this work, ZnO nanowires were modified with three mercaptans.

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Indium tin oxide (Sn-doped In2O3-δ or ITO) is a very interesting and technologically important transparent conducting oxide. This class of material has been extensively investigated for decades, with research efforts mostly focusing on the application aspects. The fundamental issues of the electronic conduction properties of ITO from room temperature down to liquid-helium temperatures have rarely been addressed thus far. Studies of the electrical-transport properties over a wide range of temperature are essential to unravelling the underlying electronic dynamics and microscopic electronic parameters. In this topical review, we show that one can learn rich physics in ITO material, including the semi-classical Boltzmann transport, the quantum-interference electron transport, as well as the many-body Coulomb electron-electron interaction effects in the presence of disorder and inhomogeneity (granularity). To fully reveal the numerous avenues and unique opportunities that the ITO material has provided for fundamental condensed matter physics research, we demonstrate a variety of charge transport properties in different forms of ITO structures, including homogeneous polycrystalline thin and thick films, homogeneous single-crystalline nanowires and inhomogeneous ultrathin films. In this manner, we not only address new physics phenomena that can arise in ITO but also illustrate the versatility of the stable ITO material forms for potential technological applications. We emphasize that, microscopically, the novel and rich electronic conduction properties of ITO originate from the inherited robust free-electron-like energy bandstructure and low-carrier concentration (as compared with that in typical metals) characteristics of this class of material. Furthermore, a low carrier concentration leads to slow electron-phonon relaxation, which in turn causes the experimentally observed (i) a small residual resistance ratio, (ii) a linear electron diffusion thermoelectric power in a wide temperature range 1-300 K and (iii) a weak electron dephasing rate. We focus our discussion on the metallic-like ITO material.

Magnetic exciton relaxation and spin-spin interaction by the time-delayed photoluminescence spectra of ZnO:Mn nanowires

ZnO:Mn nanostructures are important diluted magnetic materials, but their electronic structure and magnetic origin are still not well understood. Here we studied the time-delayed and power-dependent photoluminescence spectra of Mn(II) doped ZnO nanowires with very low Mn concentration. From the time-delayed emission spectra, we obtained their electronic levels of single Mn ion replacement of Zn ions in ZnO nanowire. The high d-level emissions show up unusually because of the stronger p-d hybridization than that in ZnS, as well as the spin-spin coupling. After increasing Mn doping concentration, the ferromagentic cluster of the Mn-O-Mn with varied configurations can form and give individual emission peaks, which are in good agreement with the ab initio calculations. The presence of clustered Mn ions originates from their ferromagnetic coupling. The lifetimes of these d levels show strong excitation power-dependent behavior, indication of strong spin-dependent coherent emission. One-dimensional structure is critical for this coherent emission behavior. These results indicate that the d state is not within Mn ion only, but a localized exciton magnetic polaron, Mn-O-Mn coupling should be one source of ferromagnetism in ZnO:Mn lattice, the latter also can combine with free exciton for EMP and produce coherent EMP condensation and emission from a nanowire. This kind of nanowires can be expected to work for both spintronic and spin-photonic devices if we tune the transition metal ion doping concentration in it.

Control of Valence States in ZnO by CoDoping Method

We have investigated the electronic structures of p- or n-type doped ZnO based on ab initio electronic band structure calculations in order to control valence states in ZnO for the fabrication of low-resistivity p-type ZnO. We find unipolarity in ZnO; p-type doping using Li or N increases the Madelung energy while n-type doping using Al, Ga, In or F species decreases the Madelung energy. We have proposed materials design: codoping using N acceptors and reactive codopants, Al or Ga, enhances electric properties in p-type codoped ZnO. It has been already verified by experiments using the N acceptors and Ga reactive donor codopants. We find a very weak repulsive interaction between Li acceptors and the delocalization of the Li-impurity states for Lidoped ZnO, in contrast with the case of N-doped ZnO. On the other hand, we find the compensation mechanism by the formation of 0 vacancy in the vicinity of the Li-acceptor sites. We propose a group VII element, F species, as a promising candidate for use of the reactive codopant as for Li-doped ZnO in order to realize low-resistivity p-type ZnO.

The quasiparticle band structure of zincblende and rocksalt ZnO

We present the quasiparticle band structure of ZnO in its zincblende (ZB) and rocksalt (RS) phases at the Γ point, calculated within the GW approximation. The effect of the p-d hybridization on the quasiparticle corrections to the band gap is discussed. We compare three systems, ZB-ZnO which shows strong p-d hybridization and has a direct band gap, RS-ZnO which is also hybridized but includes inversion symmetry and therefore has an indirect band gap, and ZB-ZnS which shows a weaker hybridization due to a change of the chemical species from oxygen to sulfur. The quasiparticle corrections are calculated with different numbers of valence electrons in the Zn pseudopotential. We find that the Zn(20+) pseudopotential is essential for the adequate treatment of the exchange interaction in the self-energy. The calculated GW band gaps are 2.47 eV and 4.27 eV respectively, for the ZB and RS phases. The ZB-ZnO band gap is underestimated compared to the experimental value of 3.27 by ∼ 0.8 eV. The RS-ZnO band gap compares well with the experimental value of 4.5 eV. The underestimation for ZB-ZnO is correlated with the strong p-d hybridization. The GW band gap for ZnS is 3.57 eV, compared to the experimental value of 3.8 eV.

Probing the electronic structure of ZnO nanowires by valence electron energy loss spectroscopy

Valence electron energy loss spectroscopy in a transmission electron microscope is employed to investigate the electronic structure of ZnO nanowires with diameter ranging from 20 to 100 nm. Its excellent spatial resolution enables this technique to explore the electronic states of a single nanowire. We found that all of the basic electronic structure characteristics of the ZnO nanowires, including the 3.3 eV band gap, the single electron interband transitions at approximately = 9.5, approximately = 13.5,and approximately = 21.8 eV, and the bulk plasmon oscillation at approximately 18.8 eV, resemble those of the bulk ZnO. Momentum transfer resolved energy loss spectra suggest that the 13.5 eV excitation is actually consisted of two weak excitations at approximately = 12.8 and approximately = 14.8 eV, which originate from transitions of two groups of the Zn 3d electrons to the empty density of states in the conduction band, with a dipole-forbidden nature. The energy loss spectra taken from single nanowires of different diameters show several size-dependent features, including an increase in the oscillator strength of the surface plasmon resonance at approximately = 11.5 eV, a broadening of the bulk plasmon peak, and splitting of the O 2s transition at approximately = 21.8 eV into two peaks, which coincides with a redshift of the bulk plasmon peak, when the nanowire diameter decreases. All these observations can be well explained by the increased surface/volume ratio in nanowires of small diameter.

Surface Structure of (101̄0) and (112̄0) Surfaces of ZnO with Density Functional Theory and Atomistic Simulation

We have calculated the stability of two of the low-index surfaces known to dominate the morphology of ZnO as a function of stoichiometry. These two surfaces are (10(-)10) and (11(-)20). In each case, two terminations only are stable for a significant range of oxygen and hydrogen chemical potential: the pure stoichiometric surface and a surface covered in a monolayer of water. The mode by which the water adsorbs is however different for the two surfaces considered. On the (10(-)10) surface the close proximity of the water molecules means hydrogen bonding can occur between adjacent chemiabsorbed water molecules and hence there is little difference in the stability of the hydrated and hydroxylated surface, and in fact the most stable surface occurs with a combination of dissociated and undissociated water adsorption. In the case of the (11(-)20) surface, it is only when full dissociation has occurred that a hydrogen-bonding network can form. Our results also show good agreement between DFT and atomistic simulations, suggesting that potential based methods can usefully be applied to ZnO.

Electronic excitation energies of Zn(i)O(i) clusters

Time-dependent density-functional theory (TDDFT) is used to study the excitation energies of the global minima of small Zn(i)O(i) clusters, i = 1-15. The relativistic compact effective core potentials and shared-exponent basis set of Stevens, Krauss, Basch, and Jasien (SKBJ), systematically enlarged with extra functions, were used throughout this work. In general, the calculated excitations occur from the nonbonding p orbitals of oxygen. These orbitals are perpendicular to the molecular plane in the case of the rings and normal to the spheroid surface for 3D clusters. The calculated excitation energies are larger for ringlike clusters as compared to 3D clusters, with the excitation energies of the latter structures lying close to the visible spectrum. The difference between Kohn-Sham eigenvalues of the orbitals involved in the electronic excitations studied have also been compared to the TDDFT results of the corresponding excitations for two approximate density functionals, that is, MPW1PW91 and B3LYP, the latter being more accurate. Moreover, they approach the TDDFT value as the cluster size increases. Therefore, this might be a practical method for estimating excitation energies of large Zn(i)O(i) clusters.