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Roy S, Yang X, Gao J. Biaxial strain tuned upconversion photoluminescence of monolayer WS 2. Sci Rep 2024; 14:3860. [PMID: 38360891 PMCID: PMC10869839 DOI: 10.1038/s41598-024-54185-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/20/2023] [Accepted: 02/09/2024] [Indexed: 02/17/2024] Open
Abstract
Monolayer tungsten disulfide (1L-WS2) is a direct bandgap atomic-layered semiconductor material with strain tunable optical and optoelectronic properties among the monolayer transition metal dichalcogenides (1L-TMDs). Here, we demonstrate biaxial strain tuned upconversion photoluminescence (UPL) from exfoliated 1L-WS2 flakes transferred on a flexible polycarbonate cruciform substrate. When the biaxial strain applied to 1L-WS2 increases from 0 to 0.51%, it is observed that the UPL peak position is redshifted by up to 60 nm/% strain, while the UPL intensity exhibits exponential growth with the upconversion energy difference varying from - 303 to - 120 meV. The measured power dependence of UPL from 1L-WS2 under biaxial strain reveals the one photon involved multiphonon-mediated upconversion mechanism. The demonstrated results provide new opportunities in advancing TMD-based optical upconversion devices for future flexible photonics and optoelectronics.
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Affiliation(s)
- Shrawan Roy
- Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, Rolla, MO, 65409, USA
| | - Xiaodong Yang
- Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, Rolla, MO, 65409, USA.
| | - Jie Gao
- Department of Mechanical Engineering, Stony Brook University, Stony Brook, NY, 11794, USA.
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Mushtaq A, Yang X, Gao J. Unveiling room temperature upconversion photoluminescence in monolayer WSe 2. OPTICS EXPRESS 2022; 30:45212-45220. [PMID: 36522928 DOI: 10.1364/oe.471027] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2022] [Accepted: 11/15/2022] [Indexed: 06/17/2023]
Abstract
Upconversion photoluminescence (UPL) is a phenomenon describing an anti-Stokes process where the emitted photons have higher energy than the absorbed incident photons. Transition metal dichalcogenides (TMDCs) with strong photon-exciton interactions represent a fascinating platform for studying the anti-Stokes UPL process down to the monolayer thickness limit. Herein, we demonstrate room-temperature UPL emission in monolayer WSe2 with broadband near-infrared excitation. The measured excitation power dependence of UPL intensity at various upconversion energy gains unveils two distinguished upconversion mechanisms, including the one-photon involved multiphonon-assisted UPL process and the two-photon absorption (TPA) induced UPL process. In the phonon-assisted UPL regime, the observed exponential decay of UPL intensity with the increased energy gain is attributed to the decreased phonon population. Furthermore, valley polarization properties of UPL emission with circular polarization excitation is investigated. The demonstrated results will advance future photon upconversion applications based on monolayer TMDCs such as night vision, semiconductor laser cooling, and bioimaging.
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Wang Q, Wee ATS. Photoluminescence upconversion of 2D materials and applications. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:223001. [PMID: 33784662 DOI: 10.1088/1361-648x/abf37f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2021] [Accepted: 03/30/2021] [Indexed: 06/12/2023]
Abstract
Photoluminescence (PL) upconversion is a phenomenon involving light-matter interactions, where the energy of emitted photons is higher than that of the incident photons. PL upconversion is an intriguing process in two-dimensional materials and specifically designed 2D heterostructures, which have potential upconversion applications in optoelectronic devices, bioimaging, and semiconductor cooling. In this review, we focus on the recent advances in photoluminescence upconversion in two-dimensional materials and their heterostructures. We discuss the upconversion mechanisms, applications, and future outlook of upconversion in two-dimensional materials.
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Affiliation(s)
- Qixing Wang
- Max Planck Institute for Solid State Research, Stuttgart D-70569, Germany
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
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Dong H, Sun J, Ma S, Liang J, Lu T, Liu X, Xu B. Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells. NANOSCALE 2016; 8:6043-6056. [PMID: 26926840 DOI: 10.1039/c5nr07938a] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
InGaAs/GaAsP multiple quantum wells (MQWs) were grown by metal-organic chemical vapor deposition on vicinal GaAs (001) substrates with different miscut angles of 0°, 2° and 15° towards [110]. The crystal structures of InGaAs/GaAsP were characterized by high-resolution X-ray diffraction and Raman spectroscopy. The surface morphologies of InGaAs/GaAsP MQWs were observed by atomic force microscopy. The mechanisms for step flow, step bunching and pyramid growth on 0°, 2° and 15° misoriented substrates were discussed. The results provide a comprehensive phenomenological understanding of the self-ordering mechanism of vicinal GaAs substrates, which could be harnessed for designing the quantum optical properties of low-dimensional systems. From low-temperature photoluminescence, it was observed that the luminescence from the MQWs grown on a vicinal surface exhibits a red-shift with respect to the 0° case. An extra emission was observed from the 2° and 15° off samples, indicating the characteristics of quantum wire and pyramidal self-controlled quantum-dot systems, respectively. Its absence from the PL spectrum on 0° surfaces indicates that indium segregation is modified on the surfaces. The relationship between InGaAs/GaAsP MQWs grown on vicinal substrates and their optical and structural properties was explained, which provides a technological basis for obtaining different self-controlled nanostructures.
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Affiliation(s)
- Hailiang Dong
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, P. R. China
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Mazur YI, Dorogan VG, de Souza LD, Fan D, Benamara M, Schmidbauer M, Ware ME, Tarasov GG, Yu SQ, Marques GE, Salamo GJ. Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix/GaAs heterostructures. NANOTECHNOLOGY 2014; 25:035702. [PMID: 24346504 DOI: 10.1088/0957-4484/25/3/035702] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
The structural and optical properties of GaAs1-xBix quantum wells (QWs) symmetrically clad by GaAs barriers with and without additional confining AlGaAs layers are studied. It is shown that a GaAs/GaAs1-xBix/GaAs QW with x ~ 4% and well width of ~ 4 nm grown by molecular beam epitaxy demonstrates efficient photoluminescence (PL) that becomes significantly more thermally stable when a cladding AlGaAs layer is added to the QW structure. The PL behavior for temperatures between 10 and 300 K and for excitation intensities varying by seven orders of magnitude can be well described in terms of the dynamics of excitons including carrier capture in the QW layer, thermal emission and diffusion into the cladding barriers. Understanding the role of these processes in the luminescence of dilute GaAs1-xBix QW structures facilitates the creation of highly efficient devices with reduced thermal sensitivity and low threshold current.
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Affiliation(s)
- Yu I Mazur
- Institute for Nanoscience and Engineering, University of Arkansas, 731 W Dickson Street, Fayetteville, AR 72701, USA
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Yu Y, Li MF, He JF, Zhu Y, Wang LJ, Ni HQ, He ZH, Niu ZC. Photoluminescence study of low density InAs quantum clusters grown by molecular beam epitaxy. NANOTECHNOLOGY 2012; 23:065706. [PMID: 22248719 DOI: 10.1088/0957-4484/23/6/065706] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
We report a systematic optical spectroscopy study of low density InAs quantum clusters (QCs) grown by molecular beam epitaxy. The photoluminescence (PL) spectra show emission features of a wetting layer (WL) which contains hybridized quantum well states. The low-energy tail of the QCs' PL profile is actually an ensemble of some sharp lines, originating from the emission of different exciton states (e.g. X, X*, XX*) in a single quasi-three-dimensional (Q3D) cluster as detailed in the micro-PL spectra. The temperature dependence of PL spectra indicates photocarrier distribution and transport in the QC-WL system. Furthermore, this small InAs Q3D cluster is integrated with a distributed Bragg reflector structure, and using optical excitation creates a single photon source with the second-order correlation function of g((2))(0) = 0.31 at 16 K.
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Affiliation(s)
- Ying Yu
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People's Republic of China.
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Yuan ZL, Xu ZY, Zheng BZ, Xu JZ, Li SS, Ge W, Wang Y, Wang J, Chang LL, Wang PD, Ledentsov NN. Two-dimensional excitonic emission in InAs submonolayers. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:16919-16924. [PMID: 9985820 DOI: 10.1103/physrevb.54.16919] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Kovac J, Schweizer H, Pilkuhn MH, Nickel H. Influence of the kinetic energy of electrons on the formation of excitons in a shallow InxGa1-xAs/GaAs quantum well. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:13440-13443. [PMID: 9985242 DOI: 10.1103/physrevb.54.13440] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Xu ZY, Lu ZD, Yang XP, Yuan ZL, Zheng BZ, Xu JZ, Ge WK, Wang Y, Wang J, Chang LL. Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:11528-11531. [PMID: 9984940 DOI: 10.1103/physrevb.54.11528] [Citation(s) in RCA: 71] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Heller O, Bastard G. Exciton capture by shallow quantum wells in separate confinement heterostructures. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:5629-5636. [PMID: 9986526 DOI: 10.1103/physrevb.54.5629] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Marquezini MV, Brasil MJ, Brum JA, Poole P, Charbonneau S, Tamargo MC. Exciton dynamics in a single quantum well with self-assembled islands. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:16524-16530. [PMID: 9983496 DOI: 10.1103/physrevb.53.16524] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Wu Y, Arai K, Yao T. Temperature dependence of the photoluminescence of ZnSe/ZnS quantum-dot structures. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:R10485-R10488. [PMID: 9982712 DOI: 10.1103/physrevb.53.r10485] [Citation(s) in RCA: 30] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Nakano K, Kishita Y, Itoh S, Ikeda M, Ishibashi A, Strauss U. Time-resolved luminescence studies in an n-type Zn1-xCdxSe/ZnSySe1-y quantum well. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:4722-4728. [PMID: 9984032 DOI: 10.1103/physrevb.53.4722] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Spiegel R, Bacher G, Herz K, Forchel A, Litz T, Waag A, Landwehr G. Recombination and thermal emission of excitons in shallow CdTe/Cd1-xMgxTe quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:4544-4548. [PMID: 9984010 DOI: 10.1103/physrevb.53.4544] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Weber S, Limmer W, Thonke K, Sauer R, Panzlaff K, Bacher G, Meier HP, Roentgen P. Thermal carrier emission from a semiconductor quantum well. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:14739-14747. [PMID: 9980811 DOI: 10.1103/physrevb.52.14739] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Time-resolved photoluminescence and steady-state optical investigations of a Zn1−x Cd x Se/ZnSe quantum well. ACTA ACUST UNITED AC 1995. [DOI: 10.1007/bf02457223] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/24/2022]
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Kieseling F, Braun W, Wang KH, Forchel A, Knipp PA, Reinecke TL, Pagnod-Rossiaux P, Goldstein L. Barrier-confinement-controlled carrier transport into quantum wires. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:11595-11598. [PMID: 9980278 DOI: 10.1103/physrevb.52.r11595] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Daly EM, Glynn TJ, Lambkin JD, Considine L, Walsh S. Behavior of In0.48Ga0.52P/(Al0.2Ga0.8)0.52In0.48P quantum-well luminescence as a function of temperature. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:4696-4699. [PMID: 9981637 DOI: 10.1103/physrevb.52.4696] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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An NB, Mahler G. Polaritons in semiconductor multiple-quantum-well structures with Förster-type interwell coupling. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:17256-17266. [PMID: 9976127 DOI: 10.1103/physrevb.50.17256] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Botha JR, Leitch AW. Thermally activated carrier escape mechanisms from InxGa1-xAs/GaAs quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:18147-18152. [PMID: 9976247 DOI: 10.1103/physrevb.50.18147] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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