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Heo S, Lee J, Kim SH, Yun DJ, Park JB, Kim K, Kim N, Kim Y, Lee D, Kim KS, Kang HJ. Device performance enhancement via a Si-rich silicon oxynitride buffer layer for the organic photodetecting device. Sci Rep 2017; 7:1516. [PMID: 28473719 PMCID: PMC5431428 DOI: 10.1038/s41598-017-01653-z] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2017] [Accepted: 03/29/2017] [Indexed: 11/16/2022] Open
Abstract
An advanced organic photodetector (OPD) with a butter layer of Si-rich silicon oxynitride (SiOxNy) was fabricated. The detector structure is as follows: Indium tin oxide (ITO) coated glass substrate/SiOxNy(10 nm)/naphthalene-based donor:C60(1:1)/ITO. Values of x and y in SiOxNy were carefully controlled and the detector performances such as dark current and thermal stability were investigated. When the values of x and y are 0.16 and 0.66, the detector illustrates low dark current as well as excellent thermal stability. In the OPD, silicon oxynitride layer works as electron barrier under reverse bias, leading to the decrease of dark current and increase of detectivity. Since the band gap of silicon oxynitride unlike conventional buffer layers can also be controlled by adjusting x and y values, it can be adapted into various photodiode applications.
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Affiliation(s)
- Sung Heo
- Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea
| | - Jooho Lee
- Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea
| | - Seong Heon Kim
- Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea
| | - Dong-Jin Yun
- Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea
| | - Jong-Bong Park
- Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea
| | - Kihong Kim
- Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea
| | - NamJeong Kim
- Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea
| | - Yongsung Kim
- Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea
| | - Dongwook Lee
- Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea
| | - Kyu-Sik Kim
- Organic Materials Laboratory, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea.
| | - Hee Jae Kang
- Department of Physics, Chungbuk National University, Cheongju, 361-763, Korea
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Cisneros JI. Optical characterization of dielectric and semiconductor thin films by use of transmission data. APPLIED OPTICS 1998; 37:5262-5270. [PMID: 18286005 DOI: 10.1364/ao.37.005262] [Citation(s) in RCA: 58] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
A method to calculate the optical functions n(lambda) and k(lambda) by use of the transmission spectrum of a dielectric or semiconducting thin film measured at normal incidence is described. The spectrum should include the low-absorption region and the absorption edge to yield the relevant optical characteristics of the material. The formulas are derived from electromagnetic theory with no simplifying assumptions. Transparent films are considered as a particular case for which a simple method of calculation is proposed. In the general case of absorbing films the method takes advantage of some properties of the transmittance T(lambda) to permit the parameters in the two regions mentioned above to be calculated separately. The interference fringes and the optical path at the extrema of T(lambda) are exploited for determining with precision the refractive index and the film thickness. The absorption coefficient is computed at the absorption edge by an efficient iterative method. At the transition zone between the interference region and the absorption edge artifacts in the absorption curve are avoided. A small amount of absorption of the substrate is allowed for in the theory by means of a factor determined from an independent measurement, thus improving the quality of the results. Application of the method to a transmission spectrum of an a:Si(x)N(1-x):H film is illustrated in detail. Refractive index, dispersion parameters, film thickness, absorption coefficient, and optical gap are given with the help of tables and graphs.
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