Electron transport properties in RuO2 rutile

Crystal structure and absence of magnetic order in single-crystalline RuO2

RuO2was considered for a long time to be a paramagnetic metal with an ideal rutile-type structure down to low temperatures, but recent studies on single-crystals claimed evidence for antiferromagnetic order and some symmetry breaking in the crystal structure. We have grown single-crystals of RuO2by vapor transport using either O2or TeCl4as transport medium. These crystals exhibit metallic behavior following aT2low-temperature relation and a small paramagnetic susceptibility that can be attributed to Pauli paramagnetism. Neither the conductance nor the susceptibility measurements yield any evidence for a magnetic or a structural transition between 300 K and ∼4 K. Comprehensive single-crystal diffraction studies with neutron and x-ray radiation reveal the rutile structure to persist until 2 K in our crystals, and show nearly perfect stoichiometry. Previous observations of symmetry forbidden reflections can be attributed to multiple diffraction. Polarized single-crystal neutron diffraction experiments at 1.6 K exclude the proposed antiferromagnetic structures with ordered moments larger than 0.01 Bohr magnetons.

Confined Magnetization at the Sublattice-Matched Ruthenium Oxide Heterointerface

Creating a heterostructure by combining two magnetically and structurally distinct ruthenium oxides is a crucial approach for investigating their emergent magnetic states and interactions. Previously, research has predominantly concentrated on the intrinsic properties of the ferromagnet SrRuO3 and recently discovered altermagnet RuO2 solely. Here, the study engineers an ultrasharp sublattice-matched heterointerface using pseudo-cubic SrRuO3 and rutile RuO2, conducting an in-depth analysis of their spin interactions. Structurally, to accommodate the lattice symmetry mismatch, the inverted RuO2 layer undergoes an in-plane rotation of 18 degrees during epitaxial growth on SrRuO3 layer, resulting in an interesting and rotational interface with perfect crystallinity and negligible chemical intermixing. Performance-wise, the interfacial layer of 6 nm in RuO2 adjacent to SrRuO3 exhibits a nonzero magnetic moment, contributing to an enhanced anomalous Hall effect (AHE) at low temperatures. Furthermore, the observations indicate that in contrast to SrRuO3 single layers, the AHE of [(RuO2)15/(SrRuO3)n] heterostructures show nonlinear behavior and reaches its maximum when the SrRuO3 thickness reaches tens of nm. These results suggest that the interfacial magnetic interaction surpasses that of all-perovskite oxides (≈5-unit cells). This study underscores the significance and potential applications of magnetic interactions based on the crystallographic asymmetric interfaces in the design of spintronic devices.

Strain-stabilized superconductivity

Superconductivity is among the most fascinating and well-studied quantum states of matter. Despite over 100 years of research, a detailed understanding of how features of the normal-state electronic structure determine superconducting properties has remained elusive. For instance, the ability to deterministically enhance the superconducting transition temperature by design, rather than by serendipity, has been a long sought-after goal in condensed matter physics and materials science, but achieving this objective may require new tools, techniques and approaches. Here, we report the transmutation of a normal metal into a superconductor through the application of epitaxial strain. We demonstrate that synthesizing RuO₂ thin films on (110)-oriented TiO₂ substrates enhances the density of states near the Fermi level, which stabilizes superconductivity under strain, and suggests that a promising strategy to create new transition-metal superconductors is to apply judiciously chosen anisotropic strains that redistribute carriers within the low-energy manifold of d orbitals.

The Influence of the Composition of Ru100-xAlx (x = 50, 55, 60, 67) Thin Films on Their Thermal Stability

RuAl thin films possess a high potential as a high temperature stable metallization for surface acoustic wave devices. During the annealing process of the Ru-Al films, Al2O3 is formed at the surface of the films even under high vacuum conditions, so that the composition of a deposited Ru50Al50 film is shifted to a Ru-rich alloy. To compensate for this effect, the Al content is systematically increased during the deposition of the Ru-Al films. Three Al-rich alloys—Ru45Al55, Ru40Al60 and Ru33Al67—were analyzed concerning their behavior after high temperature treatment under high vacuum and air conditions in comparison to the initial Ru50Al50 sample. Although the films’ cross sections show a more homogeneous structure in the case of the Al-rich films, the RuAl phase formation is reduced with increasing Al content.

Improved photocatalytic activity in RuO2–ZnO nanoparticulate heterostructures due to inhomogeneous space charge effects

Vectorial charge separation! Inhomogeneous distribution of RuO₂ nanoparticles in RuO₂–ZnO nanocomposites favors vectorial charge separation of electron–hole pairs enhancing their photocatalytic properties.

Bulk and surface plasmon polariton excitation in RuO₂ for low-loss plasmonic applications in NIR

Transition-metal oxides, such as RuO₂, offer an exciting alternative to conventional metals for metamaterials and plasmonic applications due to their low optical losses in the visible and near-infrared ranges. In this manuscript we report observation of optically excited surface plasmon polaritons (SPPs) and bulk plasmons in RuO₂ thin films grown using DC reactive magnetron sputtering on glass and TiO₂ (001) substrates. We show that both plasmon modes can exist simultaneously for the infrared region of the optical spectrum, while only the bulk plasmons are supported at higher optical frequencies. Finally, we demonstrate that the film properties can be tailored to favor excitation of either SPP or bulk plasmons.

Nanocontact resistance and structural disorder induced resistivity variation in metallic metal-oxide nanowires

Several systems of metallic metal-oxide nanowires (NWs), including pure RuO2 and as-implanted and annealed Ru(0.98)Cu(0.02)O2 and Ru(0.93)Cu(0.07)O2 NWs, have been employed in two-probe electrical characterizations by using a transmission electron microscope-scanning tunneling microscope technique with a gold tip. Thermal, mechanical, and electron beam exposing treatments are consecutively applied to reduce the electrical contact resistance, generated from the interface between the NW and the gold tip, so as to evaluate the intrinsic NW resistance. It is found that the residual contact resistance cannot be entirely removed. For each system of metallic metal-oxide NWs, several tens of NWs are applied to electrical characterizations and the total resistances unveil a linear dependence on the ratio of the length to the area of the NWs. As a result, the average resistivity and the contact resistance of the metallic metal-oxide NWs could be evaluated at room temperatures. The average resistivities of pure RuO2 NWs agree well with the results obtained from standard two- and four-probe electrical-transport measurements. In addition, the as-implanted Cu-RuO2 NWs reveal disordered crystalline structures in high-resolution TEM images and give higher resistivities in comparison with that of pure RuO2 NWs. The residual contact resistances of all kinds of metallic metal-oxide NWs unveil, more surprisingly, an approximation value of several kilohms, even though the average resistivities of these NWs change by more than one order of magnitude. It is argued that the ductile gold tip makes one or more soft contacts on the stiff metal-oxide NWs with nanometer roughness and the nanocontacts on the NWs contribute to the electrical contact resistance.

Making the most of a scarce platinum-group metal: conductive ruthenia nanoskins on insulating silica paper

Subambient thermal decomposition of ruthenium tetroxide from nonaqueous solution onto porous SiO(2) substrates creates 2-3 nm thick coatings of RuO(2) that cover the convex silica walls comprising the open, porous structure. The physical properties of the resultant self-wired nanoscale ruthenia significantly differ depending on the nature of the porous support. Previously reported RuO(2)-modified SiO(2) aerogels display electron conductivity of 5 x 10(-4) S cm(-1) (as normalized to the geometric factor of the insulating substrate, not the conducting ruthenia phase), whereas RuO(2)-modified silica filter paper at approximately 5 wt % RuO(2) exhibits approximately 0.5 S cm(-1). Electron conduction through the ruthenia phase as examined from -160 to 260 degrees C requires minimal activation energy, only 8 meV, from 20 to 260 degrees C. The RuO(2)(SiO(2)) fiber membranes are electrically addressable, capable of supporting fast electron-transfer reactions, express an electrochemical surface area of approximately 90 m(2) g(-1) RuO(2), and exhibit energy storage in which 90% of the total electron-proton charge is stored at the outer surface of the ruthenia phase. The electrochemical capacitive response indicates that the nanocrystalline RuO(2) coating can be considered to be a single-unit-thick layer of the conductive oxide, as physically stabilized by the supporting silica fiber.

Electrical transport studies of individual IrO(2) nanorods and their nanorod contacts

We have studied the electrical transport properties of individual single-crystalline IrO(2) nanorods prepared by the metal-organic chemical vapour deposition method. With the help of the standard electron-beam lithographic technique, individual nanorods are contacted by Cr/Au submicron electrodes from above. Utilizing two-probe, three-probe and four-probe measurement configurations, not only the intrinsic electrical transport properties of the individual nanorods but also the electronic contact resistances, R(c)(T), have been determined from 300 K down to liquid-helium temperatures. Our measured resistivity behaviour of the nanorods is in close agreement with the current theoretical understanding of this rutile material. On the other hand, we found that the temperature behaviour of the electronic contact resistance obeys the law [Formula: see text] over an extremely wide temperature range, from approximately 100 K down to liquid-helium temperatures. This latter conduction process is ascribed to the hopping of electrons through nanoscale Cr granules and/or an amorphous coating incidentally formed at the interface between the submicron Cr/Au electrode and the nanorod.