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NENASHEV AV, DVURECHENSKII AV, ZINOVIEVA AF, GOLOVINA EA. ZEEMAN EFFECT FOR ELECTRONS AND HOLES IN Ge/ Si QUANTUM DOTS. INTERNATIONAL JOURNAL OF NANOSCIENCE 2003. [DOI: 10.1142/s0219581x03001620] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
Abstract
We investigate theoretically the Zeeman effect on the electron and hole states in quantum dots. In frame of tight-binding approach, we propose a method of calculating the g factor for localized states. The principal values of the g factor for the ground electron and hole states in the self-assembled Ge / Si quantum dot are calculated. We find the strong g factor anisotropy — the components gxx, gyy are one order smaller than the gzz component, gzz=15.71, gxx=1.14, and gyy=1.76. The analysis of the wave function structure shows that the g factor of hole are mainly controlled by the contribution of the state with Jz=±(3/2), where Jz is the angular momentum projection on the growth direction of the quantum dot. The g factor of localized electron in Ge / Si quantum dot is close to 2: gzz=2.0004 and gxx=gyy=1.9976.
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Affiliation(s)
- A. V. NENASHEV
- Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
| | | | - A. F. ZINOVIEVA
- Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
| | - E. A. GOLOVINA
- Novosibirsk State University, 630090 Novosibirsk, Russia
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Wassermeier M, Sudijono J, Johnson MD, Leung KT, Orr BG, Däweritz L, Ploog K. Reconstruction of the GaAs (311)A surface. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:14721-14724. [PMID: 9978411 DOI: 10.1103/physrevb.51.14721] [Citation(s) in RCA: 47] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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