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For: Wang Q, Lu F, Gong D, Chen X, Wang J, Sun H, Wang X. Interfacial defects in Si1-xGex/Si quantum wells detected by deep-level transient spectroscopy. Phys Rev B Condens Matter 1994;50:18226-18230. [PMID: 9976257 DOI: 10.1103/physrevb.50.18226] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

For:	Wang Q, Lu F, Gong D, Chen X, Wang J, Sun H, Wang X. Interfacial defects in Si1-xGex/Si quantum wells detected by deep-level transient spectroscopy. Phys Rev B Condens Matter 1994;50:18226-18230. [PMID: 9976257 DOI: 10.1103/physrevb.50.18226] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

Number	Cited by Other Article(s)
1	Schmalz K, Yassievich IN, Collart EJ, Gravesteijn DJ. Deep-level transient spectroscopy study of narrow SiGe quantum wells with high Ge content. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;54:16799-16812. [PMID: 9985810 DOI: 10.1103/physrevb.54.16799] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023] Abstract Collapse Key Words Collapse MESH Headings Collapse Grants Collapse Affiliation(s) Collapse
2	Lu F, Gong D, Wang J, Wang Q, Sun H, Wang X. Capacitance-voltage characteristics of a Schottky junction containing SiGe/Si quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;53:4623-4629. [PMID: 9984020 DOI: 10.1103/physrevb.53.4623] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023] Abstract Collapse Key Words Collapse MESH Headings Collapse Grants Collapse Affiliation(s) Collapse