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Chen C, Chen X, Yu H, Shao Y, Guo Q, Deng B, Lee S, Ma C, Watanabe K, Taniguchi T, Park JG, Huang S, Yao W, Xia F. Symmetry-Controlled Electron-Phonon Interactions in van der Waals Heterostructures. ACS NANO 2019; 13:552-559. [PMID: 30457832 DOI: 10.1021/acsnano.8b07290] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Light-matter interactions in the van der Waals (vdWs) heterostructures exhibit many fascinating properties which can be harnessed to realize optoelectronic applications and probe fundamental physics. Moreover, the electron-phonon interaction in the vdWs heterostructures can have a profound impact on light-matter interaction properties because light excited electrons can strongly couple with phonons in heterostructures. Here, we report symmetry-controlled electron-phonon interactions in engineered two-dimensional (2D) material/silicon dioxide (SiO2) vdWs heterostructures. We observe two Raman modes arising from originally Raman-silent phonon modes in SiO2. The Raman modes have fixed peak positions regardless of the type of 2D materials in the heterostructures. Interestingly, such Raman emissions exhibit various symmetry properties in heterostructures with 2D materials of different crystalline structures, controlled by their intrinsic electronic band properties. In particular, we reveal chiral Raman emissions with reversed helicity in contrast to that of typical valley polarization in honeycomb 2D materials due to the phonon-assisted excitonic intervalley scattering process induced by electron-hole exchange interaction. The observation of the symmetry-controlled Raman scattering process not only provides a deep insight into the microscopic mechanisms of electron-phonon interactions in vdWs heterostructures but also may lead to the realization of valley-phononic devices.
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Affiliation(s)
- Chen Chen
- Department of Electrical Engineering , Yale University , New Haven , Connecticut 06511 , United States
| | - Xiaolong Chen
- Department of Electrical Engineering , Yale University , New Haven , Connecticut 06511 , United States
| | - Hongyi Yu
- Department of Physics and Center of Theoretical and Computational Physics , The University of Hong Kong , Hong Kong , China
| | - Yuchuan Shao
- Department of Electrical Engineering , Yale University , New Haven , Connecticut 06511 , United States
| | - Qiushi Guo
- Department of Electrical Engineering , Yale University , New Haven , Connecticut 06511 , United States
| | - Bingchen Deng
- Department of Electrical Engineering , Yale University , New Haven , Connecticut 06511 , United States
| | - Sungmin Lee
- Center for Correlated Electron Systems , Institute for Basic Science (IBS) , Seoul 08826 , Korea
- Department of Physics and Astronomy , Seoul National University , Seoul 08826 , Korea
| | - Chao Ma
- Department of Electrical Engineering , Yale University , New Haven , Connecticut 06511 , United States
| | - Kenji Watanabe
- National Institute for Materials Science , 1-1 Namiki , Tsukuba 305-0044 , Japan
| | - Takashi Taniguchi
- National Institute for Materials Science , 1-1 Namiki , Tsukuba 305-0044 , Japan
| | - Je-Geun Park
- Center for Correlated Electron Systems , Institute for Basic Science (IBS) , Seoul 08826 , Korea
- Department of Physics and Astronomy , Seoul National University , Seoul 08826 , Korea
| | - Shengxi Huang
- Department of Electrical Engineering , The Pennsylvania State University, University Park , University Park , Pennsylvania 16802 , United States
| | - Wang Yao
- Department of Physics and Center of Theoretical and Computational Physics , The University of Hong Kong , Hong Kong , China
| | - Fengnian Xia
- Department of Electrical Engineering , Yale University , New Haven , Connecticut 06511 , United States
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Cappeletti LB, Moncada E, Poisson J, Butler IS, Dos Santos JHZ. Determination of the network structure of sensor materials prepared by three different sol-gel routes using Fourier transform infrared spectroscopy (FT-IR). APPLIED SPECTROSCOPY 2013; 67:441-447. [PMID: 23601544 DOI: 10.1366/12-06748] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Solid acid-base sensor materials were prepared by encapsulating three pH indicators (alizarin red, brilliant yellow, and acridine) within a silica matrix using a sol-gel approach through three different routes: (1) non-hydrolytic, (2) acid-catalyzed, and (3) base-catalyzed. Raman and Fourier transform infrared spectroscopies were used to evaluate the silica-indicator interactions. Because vibrational bands assigned to functional groups present in the indicator molecules were not detected, the main silica stretching mode νSi-O between approximately 1300 and 1000 cm(-1) was used to detect the presence of our indicators within the silica matrix. The large band centered at 1100 cm(-1) was deconvoluted into four components corresponding to the longitudinal optic and transversal optic modes of the silicon monoxide (SiO)4 and (SiO)6 siloxane rings. Using the component area of each mode, it was possible to calculate the percentage of each structure. Such percentages ranged from 49% to 70% (SiO)6 for the analyzed samples, within a confidence level of 95% (p = 0.05). (The confidence limits were 53-62%.) These results could be related to the pH indicator content, indicating that the quantity of the encapsulated molecule affects the (SiO)6 percentage values. In addition, a comparison with the radius of gyration obtained by small angle X-ray scattering was done. These results indicate that the analyte accesses the receptor elements through the passages between the siloxane rings but not through the siloxane rings themselves.
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Arendse CJ, Malgas GF, Muller TFG, Knoesen D, Oliphant CJ, Motaung DE, Halindintwali S, Mwakikunga BW. Thermally Induced Nano-Structural and Optical Changes of nc-Si:H Deposited by Hot-Wire CVD. NANOSCALE RESEARCH LETTERS 2009; 4:307-312. [PMID: 20596406 PMCID: PMC2893958 DOI: 10.1007/s11671-008-9243-0] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/28/2008] [Accepted: 12/30/2008] [Indexed: 05/29/2023]
Abstract
We report on the thermally induced changes of the nano-structural and optical properties of hydrogenated nanocrystalline silicon in the temperature range 200-700 degrees C. The as-deposited sample has a high crystalline volume fraction of 53% with an average crystallite size of ~3.9 nm, where 66% of the total hydrogen is bonded as identical withSi-H monohydrides on the nano-crystallite surface. A growth in the native crystallite size and crystalline volume fraction occurs at annealing temperatures >/=400 degrees C, where hydrogen is initially removed from the crystallite grain boundaries followed by its removal from the amorphous network. The nucleation of smaller nano-crystallites at higher temperatures accounts for the enhanced porous structure and the increase in the optical band gap and average gap.
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Affiliation(s)
- CJ Arendse
- CSIR National Centre for Nano-Structured Materials, P.O. Box 395, Pretoria, 0001, South Africa
- Department of Physics, University of the Western Cape, Private Bag X17, Bellville, 7535, South Africa
| | - GF Malgas
- CSIR National Centre for Nano-Structured Materials, P.O. Box 395, Pretoria, 0001, South Africa
| | - TFG Muller
- Department of Physics, University of the Western Cape, Private Bag X17, Bellville, 7535, South Africa
| | - D Knoesen
- Department of Physics, University of the Western Cape, Private Bag X17, Bellville, 7535, South Africa
| | - CJ Oliphant
- CSIR National Centre for Nano-Structured Materials, P.O. Box 395, Pretoria, 0001, South Africa
- Department of Physics, University of the Western Cape, Private Bag X17, Bellville, 7535, South Africa
| | - DE Motaung
- CSIR National Centre for Nano-Structured Materials, P.O. Box 395, Pretoria, 0001, South Africa
- Department of Physics, University of the Western Cape, Private Bag X17, Bellville, 7535, South Africa
| | - S Halindintwali
- Department of Physics, University of the Western Cape, Private Bag X17, Bellville, 7535, South Africa
| | - BW Mwakikunga
- CSIR National Centre for Nano-Structured Materials, P.O. Box 395, Pretoria, 0001, South Africa
- School of Physics, University of the Witwatersrand, Private Bag 3, P.O. Wits, Johannesburg, 2050, South Africa
- Department of Physics, University of Malawi, The Polytechnic, Private Bag 303, Blantyre, Malawi
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Investigation of a nanocrystalline silicon phase embedded in SiO[sub x] thin films grown by pulsed laser deposition. ACTA ACUST UNITED AC 2005. [DOI: 10.1116/1.1880252] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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Ojeda F, Abel F, Albella JM. Hydrogen Elimination Kinetics during Chemical Vapor Deposition of Silica Films. J Phys Chem B 2002. [DOI: 10.1021/jp0255381] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- F. Ojeda
- Departamento de Física e Ingeniería de Superficies, Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain, and Groupe de Physique des Solides, Universités Paris 7 et Paris 6, 2 Place Jussieu, 75251 Paris Cedex 05, France
| | - F. Abel
- Departamento de Física e Ingeniería de Superficies, Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain, and Groupe de Physique des Solides, Universités Paris 7 et Paris 6, 2 Place Jussieu, 75251 Paris Cedex 05, France
| | - J. M. Albella
- Departamento de Física e Ingeniería de Superficies, Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain, and Groupe de Physique des Solides, Universités Paris 7 et Paris 6, 2 Place Jussieu, 75251 Paris Cedex 05, France
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Chigane M, Ishikawa M, Izaki M. Preparation of Silica Thin Films by Electrolyses of Aqueous Solution. ACTA ACUST UNITED AC 2002. [DOI: 10.1149/1.1506462] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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Rouchon D, Rochat N, Gustavo F, Chabli A, Renault O, Besson P. Study of ultrathin silicon oxide films by FTIR-ATR and ARXPS after wet chemical cleaning processes. SURF INTERFACE ANAL 2002. [DOI: 10.1002/sia.1335] [Citation(s) in RCA: 26] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Glinka YD, Jaroniec M. Spontaneous and Stimulated Raman Scattering from Surface Phonon Modes in Aggregated SiO2 Nanoparticles. J Phys Chem B 1997. [DOI: 10.1021/jp971837s] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Yu. D. Glinka
- Separation and Surface Science Center, Department of Chemistry, Kent State University, Kent, Ohio 44242, and Institute of Surface Chemistry of the National Academy of Sciences of Ukraine, prospekt Nauki 31, Kiev 252650, Ukraine
| | - M. Jaroniec
- Separation and Surface Science Center, Department of Chemistry, Kent State University, Kent, Ohio 44242, and Institute of Surface Chemistry of the National Academy of Sciences of Ukraine, prospekt Nauki 31, Kiev 252650, Ukraine
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