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Khan AA, Repiso E, Herrera M, Carrington PJ, de la Mata M, Pizarro J, Krier A, Molina SI. Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices. NANOTECHNOLOGY 2020; 31:105702. [PMID: 31751978 DOI: 10.1088/1361-6528/ab59f8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Sub-monolayer (SML) deposition of InSb within InAs matrix by migration enhanced epitaxy tends to form type II SML nanostructures offering efficient light emission within the mid-infrared (MIR) range between 3 and 5 μm. In this work, we report on the Sb distribution in InSb/InAs SML nanostructures with InAs cap layers grown at temperatures lower than that associated with the under-grown InSb active layer. Analysis by transmission electron microscopy (TEM) in 002 dark field conditions shows that the reduction in the growth temperature of the InAs cap layer increases the amount of Sb deposited in the layers, in good agreement with the x-ray diffraction results. TEM micrographs also show that the layers are formed by random InSbAs agglomerates, where the lower cap temperature leads to a more continuous InSb layer. Quantitative atomic column resolved high angle annular dark field-scanning (S)TEM analyses also reveal atomic columns with larger composition of Sb for the structure with the lowest InAs cap layer temperature. The dependence of the Sb distribution on InAs cap growth temperature allows tuning the corresponding emission wavelength in the MIR range, as shown by the photoluminescence emission spectra.
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Affiliation(s)
- Atif A Khan
- Department of Material Science, Metallurgical Chemistry and Inorganic Chemistry, IMEYMAT, University of Cádiz, E-11510 Puerto Real, Spain
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Zhang L, Wu M, Chen X, Wu X, Spiecker E, Song Y, Pan W, Li Y, Yue L, Shao J, Wang S. Nanoscale distribution of Bi atoms in InP 1-xBi x. Sci Rep 2017; 7:12278. [PMID: 28947809 PMCID: PMC5612989 DOI: 10.1038/s41598-017-12075-2] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/15/2016] [Accepted: 09/04/2017] [Indexed: 11/09/2022] Open
Abstract
The nanoscale distribution of Bi in InPBi is determined by atom probe tomography and transmission electron microscopy. The distribution of Bi atoms is not uniform both along the growth direction and within the film plane. A statistically high Bi-content region is observed at the bottom of the InPBi layer close to the InPBi/InP interface. Bi-rich V-shaped walls on the (-111) and (1-11) planes close to the InPBi/InP interface and quasi-periodic Bi-rich nanowalls in the (1-10) plane with a periodicity of about 100 nm are observed. A growth model is proposed to explain the formation of these unique Bi-related nanoscale features. These features can significantly affect the deep levels of the InPBi epilayer. The regions in the InPBi layer with or without these Bi-related nanostructures exhibit different optical properties.
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Affiliation(s)
- Liyao Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China
| | - Mingjian Wu
- Institute of Micro- and Nanostructure Research & Center for Nanoanalysis and Electron Microscopy (CENEM), Department of Materials Science, Universität Erlangen-Nürnberg, Cauerstraße 6, D-91058, Erlangen, Germany
- Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin, Germany
| | - Xiren Chen
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, CAS, 500 Yutian Road, Shanghai, 200083, China
| | - Xiaoyan Wu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China
| | - Erdmann Spiecker
- Institute of Micro- and Nanostructure Research & Center for Nanoanalysis and Electron Microscopy (CENEM), Department of Materials Science, Universität Erlangen-Nürnberg, Cauerstraße 6, D-91058, Erlangen, Germany
| | - Yuxin Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China
| | - Wenwu Pan
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China
| | - Yaoyao Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China
| | - Li Yue
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China
| | - Jun Shao
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, CAS, 500 Yutian Road, Shanghai, 200083, China
| | - Shumin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China.
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296, Gothenburg, Sweden.
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Shchukina V, Ledentsova N, Ustinov V, Musikhin Y, Volovik V, Schliwa A, Stier O, Heitz R, Bimberg D. New Tools to Control Morphology of Self-Organized Quantum Dot Nanostructures. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-618-79] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
ABSTRACTWe consider several approaches to control morphology of self-organized quantum dot (QD) nanostructures. (i) We study effects of temperature and of temperature ramping on formation of QD arrays. The theory of equilibrium distribution of island volumes is developed predicting an entropy-driven decrease of island volume at higher temperatures. Experiments on InAs/GaAs(001) obtained both at submonolayer deposition and in Stranski-Krastanow (SK) growth mode reveal the decrease of island volume with temperature increase that agrees with the thermodynamic picture of island formation. (ii) We show a reversibility of temperature-driven changes in island volume, shape, and density for SK InAs/GaAs(001) islands and a new possibility to control QDs. (iii) We consider an advanced way of formation of complex QD structures. For multisheet arrays of strained islands a transition between correlation and anticorrelation driven by the spacer thickness is predicted theoretically and confirmed experimentally. (iv) The overgrowth of InAs/GaAs islands by an InGa(Al)As alloy leads to alloy phase separation in the capping layer and an effective increase of both the lateral size and the height of the QDs. These complex growth approaches enable us to tune efficiently electronic spectra of the QD systems.
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Shchukin VA, Ledentsov NN, Bimberg D. Spontaneous Formation of Arrays of Strained Islands: Thermodynamics Versus Kinetics. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-583-23] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
AbstractOptions are discussed which allow to distinguish equilibrium arrays of strained islands from kinetically-controlled arrays. Finite-temperature thermodynamic theory is developed for equilibrium arrays of two-dimensional monolayer-high islands in heteroepitaxial systems at submonolayer coverage. It is shown that the entropy contribution to the Helmholtz free energy of the system favors formation of small islands and results in the shrinkage of the islands with increasing temperature. The average size of islands decreases tremendously with respect to zero-temperature size at temperatures far below the characteristic energy of island formation. Such a temperature dependence can be the basis for decisive experiments aimed to distinguish between thermodynamic and kinetic effects on the formation of arrays of 2D islands. The theory is able to explain results of high-resolution electron microscopy of submonolayer arrays of InAs/GaAs(001) islands. Their formation is predominantly influenced by thermodynamics.
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Ledentsov N, Bimberg D, Hopfer F, Mutig A, Shchukin V, Savel'ev A, Fiol G, Stock E, Eisele H, Dähne M, Gerthsen D, Fischer U, Litvinov D, Rosenauer A, Mikhrin S, Kovsh A, Zakharov N, Werner P. Submonolayer quantum dots for high speed surface emitting lasers. NANOSCALE RESEARCH LETTERS 2007; 2:417-29. [PMID: 21794188 PMCID: PMC3246600 DOI: 10.1007/s11671-007-9078-0] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/10/2007] [Accepted: 07/18/2007] [Indexed: 05/31/2023]
Abstract
We report on progress in growth and applications of submonolayer (SML) quantum dots (QDs) in high-speed vertical-cavity surface-emitting lasers (VCSELs). SML deposition enables controlled formation of high density QD arrays with good size and shape uniformity. Further increase in excitonic absorption and gain is possible with vertical stacking of SML QDs using ultrathin spacer layers. Vertically correlated, tilted or anticorrelated arrangements of the SML islands are realized and allow QD strain and wavefunction engineering. Respectively, both TE and TM polarizations of the luminescence can be achieved in the edge-emission using the same constituting materials. SML QDs provide ultrahigh modal gain, reduced temperature depletion and gain saturation effects when used in active media in laser diodes. Temperature robustness up to 100 °C for 0.98 μm range vertical-cavity surface-emitting lasers (VCSELs) is realized in the continuous wave regime. An open eye 20 Gb/s operation with bit error rates better than 10-12has been achieved in a temperature range 25-85 °Cwithout current adjustment. Relaxation oscillations up to ∼30 GHz have been realized indicating feasibility of 40 Gb/s signal transmission.
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Yuan ZL, Xu ZY, Zheng BZ, Xu JZ, Li SS, Ge W, Wang Y, Wang J, Chang LL, Wang PD, Ledentsov NN. Two-dimensional excitonic emission in InAs submonolayers. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:16919-16924. [PMID: 9985820 DOI: 10.1103/physrevb.54.16919] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Ledentsov NN, Shchukin VA, Grundmann M, Kirstaedter N, Böhrer J, Schmidt O, Bimberg D, Ustinov VM, Egorov AY, Zhukov AE, Kop'ev PS, Zaitsev SV, Gordeev NY, Alferov ZI, Borovkov AI, Kosogov AO, Ruvimov SS, Werner P, Gösele U, Heydenreich J. Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:8743-8750. [PMID: 9984553 DOI: 10.1103/physrevb.54.8743] [Citation(s) in RCA: 179] [Impact Index Per Article: 6.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Belousov MV, Ledentsov NN, Maximov MV, Wang PD, Yasievich IN, Faleev NN, Kozin IA, Ustinov VM, Kop'ev PS. Energy levels and exciton oscillator strength in submonolayer InAs-GaAs heterostructures. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:14346-14351. [PMID: 9978366 DOI: 10.1103/physrevb.51.14346] [Citation(s) in RCA: 22] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Bressler-Hill V, Varma S, Lorke A, Nosho BZ, Petroff PM, Weinberg WH. Island scaling in strained heteroepitaxy: InAs/GaAs(001). PHYSICAL REVIEW LETTERS 1995; 74:3209-3212. [PMID: 10058139 DOI: 10.1103/physrevlett.74.3209] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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