Atomic and electronic structure of the GaAs/ZnSe(001) interface

Interface polarization in heterovalent core-shell nanocrystals

The potential profile and the energy level offset of core-shell heterostructured nanocrystals (h-NCs) determine the photophysical properties and the charge transport characteristics of h-NC solids. However, limited material choices for heavy metal-free III-V-II-VI h-NCs pose challenges in comprehensive control of the potential profile. Herein, we present an approach to such a control by steering dipole densities at the interface of III-V-II-VI h-NCs. The controllable heterovalency at the interface is responsible for interfacial dipole densities that result in the vacuum-level shift, providing an additional knob for the control of optical and electrical characteristics of h-NCs. The synthesis of h-NCs with atomic precision allows us to correlate interfacial dipole moments with the NCs' photochemical stability and optoelectronic performance.

Effect of molybdenum disulfide nanoribbon on quantum transport of graphene

Based on the density functional theory method in combination with the nonequilibrium green's function formalism, the quantum transport properties in graphene-[Formula: see text] vertical heterojunction were investigated in this work. The leads are boron doped graphene and seamlessly connect to the graphene nanoribbon in central scattering region. Although there is a weak graphene-[Formula: see text] interaction, molybdenum disulfide can smooth the electrostatic potential and enlarge the transport properties of the whole device. However, another competitive factor is that of the edge states of the [Formula: see text] nanoribbon. When the transport is along the zigzag direction of graphene, the armchair [Formula: see text] nanoribbon simply enlarges the transmission coefficient. Nevertheless, in the armchair transport system, there is an asymmetric electrostatic potential induced by the different atomic potentials of S and Mo atoms at both edges in the zigzag [Formula: see text] nanoribbon, whose potential can lead to obvious scattering from graphene to [Formula: see text] and suppress the transmission probability. Therefore, it also suppresses the influence of zigzag [Formula: see text] nanoribbon on the transmission coefficient. Our first principles simulations provide useful predictions for the application of graphene based emerging electronics, which may stimulate further experimental exploration.

Effects of Ga-Te interface layer on the potential barrier height of CdTe/GaAs heterointerface

The interface layer has great significance on the potential barrier height of the CdTe/GaAs heterointerface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 Å. During CdTe deposition, an As-Te and Ga-Te interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe interface dipole layer (more than 30 Å) was formed, which reduced the potential barrier height by 0.38 eV. The potential barrier height was in proportion to the chemical bonding density and thickness of the Ga-Te interface layer. These results provide a more fundamental understanding of the influencing mechanism of the interface layer on the potential barrier height of the CdTe/GaAs heterointerface.

Conditions for electronic reconstruction at stoichiometric polar/polar interfaces

Relying on first principles simulations of ZnO(0 0 0 1)/MgO(1 1 1), MgO(1 1 1)/CaO(1 1 1) and AlN(0 0 0 1)/GaN(0 0 0 1) interfaces and examples taken from the literature, we discuss under which conditions stoichiometric polar/polar interfaces may display an electronic reconstruction. We point out the role of the three contributions to the interfacial polarization discontinuity--structure, valence and electronic terms--of interfacial strains, and of finite size effects. Depending upon their relative values, the interfaces may be polar (compensated by an electron reconstruction), non-polar, or polar uncompensated at low thickness. We stress that, in superlattices or heterostructures made of thin layers, the prediction of the interface polarity character from the bulk properties of the two materials may be questionable.

Interfacial electronic traps at ZnSe/GaAs heterostructures studied by photomodulation Raman scattering

Photomodulation Raman scattering spectroscopy has been employed to study free charge trapping mechanisms at ZnSe-GaAs(001) heterostructure interfaces. This technique reveals that the interfacial region contains predominantly hole traps. Time dependent measurements of the photomodulated Raman scattering intensity show that interfacial charge-trap lifetime is ≈30 s for both electrons and holes.