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For: Che J, Mazur A, Pollmann J. Structural and electronic properties during the initial stages of Ge-GaAs(110) interface formation. Phys Rev B Condens Matter 1995;51:14470-14478. [PMID: 9978378 DOI: 10.1103/physrevb.51.14470] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

For:	Che J, Mazur A, Pollmann J. Structural and electronic properties during the initial stages of Ge-GaAs(110) interface formation. Phys Rev B Condens Matter 1995;51:14470-14478. [PMID: 9978378 DOI: 10.1103/physrevb.51.14470] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

Number	Cited by Other Article(s)
1	Honke R, Fritsch J, Pavone P, Schröder U. Electronic, structural, and dynamical properties of the GaAs(110):Ge surface. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;53:9923-9929. [PMID: 9982556 DOI: 10.1103/physrevb.53.9923] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023] Abstract Collapse Key Words Collapse MESH Headings Collapse Grants Collapse Affiliation(s) Collapse

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Cited by Other Article(s)

Honke R, Fritsch J, Pavone P, Schröder U. Electronic, structural, and dynamical properties of the GaAs(110):Ge surface. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;53:9923-9929. [PMID: 9982556 DOI: 10.1103/physrevb.53.9923] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]