• Reference Citation Analysis
  • v
  • v
  • Find an Article
Find an Article PDF (4593696)   Today's Articles (2454)   Subscriber (49324)
For: Uhlmann S, Frauenheim T, Stephan U. Molecular-dynamics subplantation studies of carbon beneath the diamond (111) surface. Phys Rev B Condens Matter 1995;51:4541-4546. [PMID: 9979300 DOI: 10.1103/physrevb.51.4541] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
Number Cited by Other Article(s)
1
Bengu E, Marks LD, Ovali RV, Gulseren O. Analysis of defects on BN nano-structures using high-resolution electron microscopy and density-functional calculations. Ultramicroscopy 2008;108:1484-9. [DOI: 10.1016/j.ultramic.2008.04.097] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/18/2007] [Accepted: 04/23/2008] [Indexed: 10/21/2022]
2
Wang C, Liu Q, Yang G. A Nanothermodynamic Analysis of Cubic Boron Nitride Nucleation upon Chemical Vapor Deposition. ACTA ACUST UNITED AC 2004. [DOI: 10.1002/cvde.200306291] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
3
Boron Nitrides — Properties, Synthesis and Applications. STRUCTURE AND BONDING 2002. [DOI: 10.1007/3-540-45623-6_1] [Citation(s) in RCA: 105] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/25/2022]
4
Afanasev VV, Bassler M, Pensl G, Schulz M. Intrinsic SiC/SiO2 Interface States. ACTA ACUST UNITED AC 1997. [DOI: 10.1002/1521-396x(199707)162:1<321::aid-pssa321>3.0.co;2-f] [Citation(s) in RCA: 469] [Impact Index Per Article: 17.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
5
Afanasev VV, Bassler M, Pensl G, Schulz M. Intrinsic SiC/SiO2 Interface States. ACTA ACUST UNITED AC 1997. [DOI: 10.1002/1521-396x(199707)162:1%3c321::aid-pssa321%3e3.0.co;2-f] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
6
Afanas'ev VV, Stesmans A, Andersson MO. Electron states and microstructure of thin a-C:H layers. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;54:10820-10826. [PMID: 9984878 DOI: 10.1103/physrevb.54.10820] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
7
Hensel H, Klein P, Urbassek HM, Frauenheim T. Comparison of classical and tight-binding molecular dynamics for silicon growth. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;53:16497-16503. [PMID: 9983492 DOI: 10.1103/physrevb.53.16497] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
8
Jungnickel G, Porezag D, Frauenheim T, Heggie MI, Lambrecht WRL, Segall B, Angus JC. Graphitization Effects on Diamond Surfaces and the Diamond/Graphite Interface. ACTA ACUST UNITED AC 1996. [DOI: 10.1002/pssa.2211540110] [Citation(s) in RCA: 45] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
PrevPage 1 of 1 1Next
© 2004-2024 Baishideng Publishing Group Inc. All rights reserved. 7041 Koll Center Parkway, Suite 160, Pleasanton, CA 94566, USA