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Wang J, Ying T, Deng J, Pei C, Yu T, Chen X, Wan Y, Yang M, Dai W, Yang D, Li Y, Li S, Iimura S, Du S, Hosono H, Qi Y, Guo JG. Superconductivity in an Orbital-Reoriented SnAs Square Lattice: A Case Study of Li 0.6 Sn 2 As 2 and NaSnAs. Angew Chem Int Ed Engl 2023; 62:e202216086. [PMID: 36573848 DOI: 10.1002/anie.202216086] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/01/2022] [Indexed: 12/28/2022]
Abstract
Searching for functional square lattices in layered superconductor systems offers an explicit clue to modify the electron behavior and find exotic properties. The trigonal SnAs3 structural units in SnAs-based systems are relatively conformable to distortion, which provides the possibility to achieve structurally topological transformation and higher superconducting transition temperatures. In the present work, the functional As square lattice was realized and activated in Li0.6 Sn2 As2 and NaSnAs through a topotactic structural transformation of trigonal SnAs3 to square SnAs4 under pressure, resulting in a record-high Tc among all synthesized SnAs-based compounds. Meanwhile, the conductive channel transfers from the out-of-plane pz orbital to the in-plane px +py orbitals, facilitating electron hopping within the square 2D lattice and boosting the superconductivity. The reorientation of p-orbital following a directed local structure transformation provides an effective strategy to modify layered superconducting systems.
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Affiliation(s)
- Junjie Wang
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Tianping Ying
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jun Deng
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Cuiying Pei
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.,ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 201210, China.,Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai, 201210, China
| | - Tongxu Yu
- Gusu Laboratory of Materials, Jiangsu, 215123, China.,Suzhou Laboratory, Jiangsu, 215123, China
| | - Xu Chen
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yimin Wan
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai, 200438, China
| | - Mingzhang Yang
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Weiyi Dai
- Gusu Laboratory of Materials, Jiangsu, 215123, China.,Suzhou Laboratory, Jiangsu, 215123, China
| | - Dongliang Yang
- Beijing Synchrotron Radiation Facility and Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China
| | - Yanchun Li
- Beijing Synchrotron Radiation Facility and Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China
| | - Shiyan Li
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai, 200438, China
| | - Soshi Iimura
- National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0047, Japan.,Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama, 226-8503, Japan.,PRESTO, Japan Science and Technology Agency, Kawaguchi, 332-0012, Japan
| | - Shixuan Du
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.,Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Hideo Hosono
- National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0047, Japan.,Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama, 226-8503, Japan
| | - Yanpeng Qi
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.,ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 201210, China.,Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai, 201210, China
| | - Jian-Gang Guo
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.,Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
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Delville MH, Barbut D, Wattiaux A, Bassat JM, Ménétrier M, Labrugère C, Grenier JC, Etourneau J. Electrochemical Fluorination of La2CuO4: A Mild “Chimie Douce” Route to Superconducting Oxyfluoride Materials. Inorg Chem 2009; 48:7962-9. [DOI: 10.1021/ic900912d] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- M. H. Delville
- CNRS, Université de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608, France
| | - D. Barbut
- CNRS, Université de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608, France
| | - A. Wattiaux
- CNRS, Université de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608, France
| | - J. M. Bassat
- CNRS, Université de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608, France
| | - M. Ménétrier
- CNRS, Université de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608, France
| | - C. Labrugère
- CNRS, Université de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608, France
- CeCaMA, Université de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608, France
| | - J. C. Grenier
- CNRS, Université de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608, France
| | - J. Etourneau
- CNRS, Université de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608, France
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