Effect of oxygen defects on transport properties and Tc of YBa2Cu3O6+x: Displacement energy for plane and chain oxygen and implications for irradiation-induced resistivity and Tc suppression

Temporal Evolution of Defects and Related Electric Properties in He-Irradiated YBa2Cu3O7-δ Thin Films

Thin films of the superconductor YBa2Cu3O7-δ (YBCO) were modified by low-energy light-ion irradiation employing collimated or focused He+ beams, and the long-term stability of irradiation-induced defects was investigated. For films irradiated with collimated beams, the resistance was measured in situ during and after irradiation and analyzed using a phenomenological model. The formation and stability of irradiation-induced defects are highly influenced by temperature. Thermal annealing experiments conducted in an Ar atmosphere at various temperatures demonstrated a decrease in resistivity and allowed us to determine diffusion coefficients and the activation energy ΔE=(0.31±0.03) eV for diffusive oxygen rearrangement within the YBCO unit cell basal plane. Additionally, thin YBCO films, nanostructured by focused He+-beam irradiation into vortex pinning arrays, displayed significant commensurability effects in magnetic fields. Despite the strong modulation of defect densities in these pinning arrays, oxygen diffusion during room-temperature annealing over almost six years did not compromise the signatures of vortex matching, which remained precisely at their magnetic fields predicted by the pattern geometry. Moreover, the critical current increased substantially within the entire magnetic field range after long-term storage in dry air. These findings underscore the potential of ion irradiation in tailoring the superconducting properties of thin YBCO films.

Disentangling Photodoping, Photoconductivity, and Photosuperconductivity in the Cuprates

The normal-state conductivity and superconducting critical temperature of oxygen-deficient YBa_{2}Cu_{3}O_{7-δ} can be persistently enhanced by illumination. Strongly debated for years, the origin of those effects-termed persistent photoconductivity and photosuperconductivity (PPS)-has remained an unsolved critical problem, whose comprehension may provide key insights to harness the origin of high-temperature superconductivity itself. Here, we make essential steps toward understanding PPS. While the models proposed so far assume that it is caused by a carrier-density increase (photodoping) observed concomitantly, our experiments contradict such conventional belief: we demonstrate that it is instead linked to a photo-induced decrease of the electronic scattering rate. Furthermore, we find that the latter effect and photodoping are completely disconnected and originate from different microscopic mechanisms, since they present different wavelength and oxygen-content dependences as well as strikingly different relaxation dynamics. Besides helping disentangle photodoping, persistent photoconductivity, and PPS, our results provide new evidence for the intimate relation between critical temperature and scattering rate, a key ingredient in modern theories on high-temperature superconductivity.

Dynamic behavior of reversible oxygen migration in irradiated-annealed high temperature superconducting wires

We use atomically resolved scanning transmission electron microscopy and electron energy loss spectroscopy to determine the atomic-scale structural, chemical and electronic properties of artificial engineered defects in irradiated-annealed high temperature superconducting wires based on epitaxial Y(Dy)BCO film. We directly probe the oxygen vacancy defects in both plane and chain sites after irradiation with 18-meV Au ions. The plane site vacancies are reoccupied during post-annealing treatment. Our results demonstrate the dynamic reversible behavior of oxygen point defects, which explains the depression and recovery of self-field critical current and critical temperature in irradiation-annealing process. These findings reveal the strong effect of oxygen vacancies in different sites on the superconductivity properties of irradiated Y(Dy)BCO film, and provide important insights into defects engineering of 2G HTS coil wires.

Doping change in the Bi-2212 superconductor directly induced by a hard X-ray nanobeam

We describe the controlled use of a 17 keV X-ray synchrotron nanobeam to progressively change the oxygen doping level in Bi-2212 superconducting whisker-like single crystals. Our data combine structural and electrical information collected on the same crystals, showing a maximum change in the critical temperature Tc of 1.3 K and a maximum elongation of ∼1 Å in the c-axis length, compared to the as-grown conditions. Simulations of our experimental conditions by means of a finite element model exclude local heating induced by the X-ray nanobeam as a possible cause for the change in the doping level and suggest an important role of secondary electrons. These findings support the possible use of hard X-rays as a novel direct-writing, photoresist-free lithographic process for the fabrication of superconducting devices, with potential nanometric resolution and 3D capability.