Electronic transport in nanoscale contacts with rough boundaries

Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors

Tantalum oxide memristors can switch continuously from a low-conductance semiconducting to a high-conductance metallic state. At the boundary between these two regimes are quantized conductance states, which indicate the formation of a point contact within the oxide characterized by multistable conductance fluctuations and enlarged electronic noise. Here, we observe diverse conductance-dependent noise spectra, including a transition from 1/f(2) (activated transport) to 1/f (flicker noise) as a function of the frequency f, and a large peak in the noise amplitude at the conductance quantum GQ=2e(2)/h, in contrast to suppressed noise at the conductance quantum observed in other systems. We model the stochastic behaviour near the point contact regime using Molecular Dynamics-Langevin simulations and understand the observed frequency-dependent noise behaviour in terms of thermally activated atomic-scale fluctuations that make and break a quantum conductance channel. These results provide insights into switching mechanisms and guidance to device operating ranges for different applications.

Discrimination between two mechanisms of surface scattering in a single-mode waveguide

Transport properties of a single-mode waveguide with rough boundary are studied by discrimination between two mechanisms of surface scattering, the amplitude and square-gradient ones. Although these mechanisms are generically mixed, we show that for some profiles they can separately operate within nonoverlapping intervals of wave numbers of scattering waves. This effect may be important in realistic situations due to inevitable long-range correlations in scattering profiles.

Ballistic, diffusive, and localized transport in surface-disordered systems: two-mode waveguide

This paper presents an analytical study of the coexistence of different transport regimes in quasi-one-dimensional surface-disordered waveguides (or electron conductors). To elucidate main features of surface scattering, the case of two open modes (channels) is considered in great detail. Main attention is paid to the transmission in dependence on various parameters of the model with two types of rough-surface profiles (symmetric and antisymmetric). It is shown that depending on the symmetry, basic mechanisms of scattering can be either enhanced or suppressed. As a consequence, different transport regimes can be realized. Specifically, in the two-mode waveguide with symmetric rough boundaries, there are ballistic, localized and coexistence transport regimes. In the waveguide with antisymmetric roughness of lateral walls, another regime of the diffusive transport can arise. Our study allows to reveal the interplay between all relevant scattering mechanisms, in particular, the role of the so-called square-gradient scattering which is typically neglected in literature, however, can give a strong impact to the transmission.

Fabrication of highly stable configurable metal quantum point contacts

Metal quantum point contacts (MQPCs), with dimensions comparable to the de Broglie wavelength of conducting electrons, reveal ballistic transport of electrons and quantized conductance in units of G0=2e(2)/h. While these contacts hold great promise for applications such as coherent controlled devices and atomic switches, their realization is mainly based on the scanning tunneling microscope (STM) and mechanically controlled break junction (MCBJ), which cannot be integrated into electronic circuits. MQPCs produced by these techniques have also limited stability at room temperature. Here we report on a new method to form MQPCs with quantized conductance values in the range of 1-4G0. The contacts appear to be stable at room temperature for hours and can be deterministically switched between conductance values, or reform in case they break, using voltage pulses. The method enables us to integrate MQPCs within nanoscale circuits to fully harness their unique advantages.

Quantum conductance oscillations in metal/molecule/metal switches at room temperature

We apply pressure-modulated conductance microscopy to metal/molecule/metal switches. Apart from pressure-induced conductance peaks that indicate nanoscale conducting pathways, we also observe dips and oscillations for devices with conductance between 1 and 2 conductance quantum. The conductance oscillations arise from interfering electron waves along one or two quantum conductance channels between two partially transmitting electrode surfaces at room temperature, underscoring these devices' potential as coherent, atomic-scale switches.