Takashina K, Niida Y, Renard VT, Fujiwara A, Fujisawa T, Muraki K, Hirayama Y. Impact of valley polarization on the resistivity in two dimensions.
PHYSICAL REVIEW LETTERS 2011;
106:196403. [PMID:
21668179 DOI:
10.1103/physrevlett.106.196403]
[Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/10/2011] [Indexed: 05/30/2023]
Abstract
We examine the temperature dependence of resistivity in a two-dimensional electron system formed in a silicon-on-insulator quantum well. The device allows us to tune the valley splitting continuously in addition to the electron density. Our data provide a global picture of how the resistivity and its temperature dependence change with valley polarization. At the boundary between valley-polarized and partially polarized regions, we demonstrate that there is an insulating contribution from spin-degenerate electrons occupying the upper valley-subband edge.
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