X-ray-absorption spectroscopy of CoSi2

Understanding of sub-band gap absorption of femtosecond-laser sulfur hyperdoped silicon using synchrotron-based techniques

The correlation between sub-band gap absorption and the chemical states and electronic and atomic structures of S-hyperdoped Si have been extensively studied, using synchrotron-based x-ray photoelectron spectroscopy (XPS), x-ray absorption near-edge spectroscopy (XANES), extended x-ray absorption fine structure (EXAFS), valence-band photoemission spectroscopy (VB-PES) and first-principles calculation. S 2p XPS spectra reveal that the S-hyperdoped Si with the greatest (~87%) sub-band gap absorption contains the highest concentration of S(2-) (monosulfide) species. Annealing S-hyperdoped Si reduces the sub-band gap absorptance and the concentration of S(2-) species, but significantly increases the concentration of larger S clusters [polysulfides (Sn(2-), n > 2)]. The Si K-edge XANES spectra show that S hyperdoping in Si increases (decreased) the occupied (unoccupied) electronic density of states at/above the conduction-band-minimum. VB-PES spectra evidently reveal that the S-dopants not only form an impurity band deep within the band gap, giving rise to the sub-band gap absorption, but also cause the insulator-to-metal transition in S-hyperdoped Si samples. Based on the experimental results and the calculations by density functional theory, the chemical state of the S species and the formation of the S-dopant states in the band gap of Si are critical in determining the sub-band gap absorptance of hyperdoped Si samples.

Magnetic properties of self-organized Co dimer nanolines on Si/Ag(110)

We demonstrate the kinetically controlled growth of one-dimensional Co nanomagnets with a high lateral order on a nanopatterned Ag(110) surface. First, self-organized Si nanoribbons are formed upon submonolayer condensation of Si on the anisotropic Ag(110) surface. Depending on the growth temperature, individual or regular arrays (with a pitch of 2 nm) of Si nanoribbons can be grown. Next, the Si/Ag(110) system is used as a novel one-dimensional Si template to guide the growth of Co dimer nanolines on top of the Si nanoribbons, taking advantage of the fact that the thermally activated process of Co diffusion into the Si layer is efficiently hindered at 220 K. Magnetic characterization of the Co nanolines using X-ray magnetic circular dichroism reveals that the first atomic Co layer directly adsorbed onto the Si nanoribbons presents a weak magnetic response. However, the second Co layer exhibits an enhanced magnetization, strongly suggesting a ferromagnetic ordering with an in-plane easy axis of magnetization, which is perpendicular to the Co nanolines.