Nonlocality and many-body effects in the optical properties of semiconductors

Moiré magnetism and moiré excitons in twisted CrSBr bilayers

Moiré excitons and moiré magnetism are essential to semiconducting van der Waals magnets. In this work, we perform a comprehensive first-principles study to elucidate the interplay of electronic excitation and magnetism in twisted magnetic CrSBr bilayers. We predict a twist-induced quantum phase transition for interlayer magnetic coupling and estimate the critical twist angle below which moiré magnetism with mixed ferromagnetic and antiferromagnetic domains could emerge. Localized one-dimensional moiré excitons are stable if the interlayer coupling is ferromagnetic and become unstable if the coupling turns to antiferromagnetic. Exciton energy modulation by magnons is estimated and dependence of exciton oscillator strength on the twist angle and interlayer coupling is analyzed. An orthogonally twisted bilayer is revealed to exhibit layer-dependent, anisotropic optical transitions. Electric field is shown to induce net magnetic moments in moiré excitons, endowing them with exceedingly long lifetimes. Our work lays the foundation for using magnetic moiré bilayers in spintronic, optoelectronic, and quantum information applications.

Large Photoinduced Tuning of Ferroelectricity in Sliding Ferroelectrics

Stacking nonpolar, monolayer materials has emerged as an effective strategy to harvest ferroelectricity in two-dimensional (2D) van der Waals (vdW) materials. At a particular stacking sequence, interlayer charge transfer allows for the generation of out-of-plane dipole components, and the polarization magnitude and direction can be altered by an interlayer sliding. In this work, we use ab initio calculations and demonstrate that in prototype sliding ferroelectrics rhombohedrally-stacked bilayer transition metal dichalcogenides MoS_{2}, the out-of-plane electric polarization can be robustly tuned by photoexcitation in a large range for a given sliding. Such tuning is associated with both a structural origin-i.e., photoinduced structural distortion-and a charge origin, namely, the distribution of photoexcited carriers. We elucidate different roles that photoexcitation plays in modulating sliding ferroelectricity under different light intensities, and we highlight the pivotal role of light in manipulating polarization of 2D vdW materials.

Tuning the optical absorption and exciton bound states of germanene by chemical functionalization

We present a comprehensive study of buckled honeycomb germanene functionalized with alternately bonded side groups hydroxyl (-H), methyl (-CH3) and trifluoro methyl (-CF3). By means of most modern theoretical and computational methods we determine the atomic geometries versus the functionalizing groups. The quasiparticle excitation effects on the electronic structure are taken into account by means of exchange-correlation treatment within the GW framework. The Bethe-Salpeter equation is solved ab initio to derive optical spectra including excitonic and quasiparticle effects. Band edge excitons are investigated in detail. The binding properties are compared with those resulting from model studies. The functionalization leads to significantly modified band structures compared with pristine germanene. The Dirac bands near the K point are destroyed and direct gaps appear at the Γ point. Together with the many-body effects, quasiparticle gaps of 2.3, 1.8 or 1.0 eV result for -H, -CH3 and -CF3 functionalization. Totally different absorption spectra are found for in-plane and out-of-plane light polarization. Strongly bound excitons are visible below the quasiparticle band edge with binding energies of about 0.5, 0.4 or 0.3 eV. The nature of these band-gap excitons is investigated via their wave function, the contribution of various interband combinations and the dipole selection rules.

Laser-Driven Rapid Synthesis of Metal-Organic Frameworks and Investigation of UV-NIR Optical Absorption, Luminescence, Photocatalytic Degradation, and Gas and Ion Adsorption Properties

In this study, we designed a platform based on a laser-driven approach for fast, efficient, and controllable MOF synthesis. The laser irradiation method was performed for the first time to synthesize Zn-based MOFs in record production time (approximately one hour) compared to all known MOF production methods with comparable morphology. In addition to well-known structural properties, we revealed that the obtained ZnMOFs have a novel optical response, including photoluminescence behavior in the visible range with nanosecond relaxation time, which is also supported by first-principles calculations. Additionally, photocatalytic degradation of methylene blue with ZnMOF was achieved, degrading the 10 ppm methylene blue (MB) solution 83% during 1 min of irradiation time. The application of laser technology can inspire the development of a novel and competent platform for a fast MOF fabrication process and extend the possible applications of MOFs to miniaturized optoelectronic and photonic devices.

High-Throughput Computational Screening of Two-Dimensional Semiconductors

Two-dimensional (2D) materials have attracted great attention mainly due to their unique physical properties and ability to fulfill the demands of future nanoscale devices. By performing high-throughput first-principles calculations combined with a semiempirical van der Waals dispersion correction, we have screened 73 direct- and 183 indirect-gap 2D nonmagnetic semiconductors from nearly 1000 monolayers according to the criteria for thermodynamic, mechanical, dynamic, and thermal stabilities and conductivity type. We present the calculated lattice constants, formation energy, Young's modulus, Poisson's ratio, shear modulus, anisotropic effective mass, band structure, band gap, ionization energy, electron affinity, and simulated scanning tunnel microscopy for each candidate meeting our criteria. The resulting 2D semiconductor database (2DSdb) can be accessed via the Web site https://materialsdb.cn/2dsdb/index.html. The 2DSdb provides an ideal platform for computational modeling and design of new 2D semiconductors and heterostructures in photocatalysis, nanoscale devices, and other applications. Further, a linear fitting model was proposed to evaluate band gap, ionization energy, and electron affinity of 2D semiconductors from the density functional theory (DFT) calculated data as initial input. This model can be as precise as hybrid DFT but with much lower computational cost.

Length-Gauge Optical Matrix Elements in WIEN2k

Hybrid exchange-correlation functionals provide superior electronic structure and optical properties of semiconductors or insulators as compared to semilocal exchange-correlation potentials due to admixing a portion of the non-local exact exchange potential from a Hartree–Fock theory. Since the non-local potential does not commute with the position operator, the momentum matrix elements do not fully capture the oscillator strength, while the length-gauge velocity matrix elements do. So far, length-gauge velocity matrix elements were not accessible in the all-electron full-potential WIEN2k package. We demonstrate the feasibility of computing length-gauge matrix elements in WIEN2k for a hybrid exchange-correlation functional based on a finite difference approach. To illustrate the implementation we determined matrix elements for optical transitions between the conduction and valence bands in GaAs, GaN, (CH3NH3)PbI3 and a monolayer MoS2. The non-locality of the Hartree–Fock exact exchange potential leads to a strong enhancement of the oscillator strength as noticed recently in calculations employing pseudopotentials (Laurien and Rubel: arXiv:2111.14772 (2021)). We obtained an analytical expression for the enhancement factor for the difference in eigenvalues not captured by the kinetic energy. It is expected that these results can also be extended to other non-local potentials, e.g., a many-body GW approximation.

Critical Evaluation of Various Spontaneous Polarization Models and Induced Electric Fields in III-Nitride Multi-Quantum Wells

In this paper, ab initio calculations are used to determine polarization difference in zinc blende (ZB), hexagonal (H) and wurtzite (WZ) AlN-GaN and GaN-InN superlattices. It is shown that a polarization difference exists between WZ nitride compounds, while for H and ZB lattices the results are consistent with zero polarization difference. It is therefore proven that the difference in Berry phase spontaneous polarization for bulk nitrides (AlN, GaN and InN) obtained by Bernardini et al. and Dreyer et al. was not caused by the different reference phase. These models provided absolute values of the polarization that differed by more than one order of magnitude for the same material, but they provided similar polarization differences between binary compounds, which agree also with our ab initio calculations. In multi-quantum wells (MQWs), the electric fields are generated by the well-barrier polarization difference; hence, the calculated electric fields are similar for the three models, both for GaN/AlN and InN/GaN structures. Including piezoelectric effect, which can account for 50% of the total polarization difference, these theoretical data are in satisfactory agreement with photoluminescence measurements in GaN/AlN MQWs. Therefore, the three models considered above are equivalent in the treatment of III-nitride MQWs and can be equally used for the description of the electric properties of active layers in nitride-based optoelectronic devices.

Relativistic DFT-1/2 Calculations Combined with a Statistical Approach for Electronic and Optical Properties of Mixed Metal Hybrid Perovskites

We overcome the great theoretical computational challenge of mixed perovskites, providing a rigorous and efficient model by including quasiparticle, spin-orbit coupling, and disorder effects. As a benchmark, we consider the mixed MAPb_1-xSn_xI₃ perovskites. The calculations are based on the generalized quasichemical approach and the DFT-1/2 approximated quasiparticle correction. Both cubic and tetragonal structures are investigated. By mapping the entire range of compositions, we correctly describe the bowing-like behavior for the energy gaps with 1.24 eV as the minimum value at x = 0.70, in very good agreement with the experimental data. Furthermore, while the tetragonal alloy reaches the maximum absorbance with a limit for the red shift at x = 1.0, the cubic alloy sets a maximum absorbance/red shift for the optimal composition at x = 0.70.

Validity of Weyl fermion picture for transition metals monopnictides TaAs, TaP, NbAs, and NbP from ab initio studies

We investigate electronic and optical properties of the topological Weyl semimetals TaAs, TaP, NbAs and NbP crystallizing in bct geometry by means of the ab initio density functional theory with spin-orbit interaction within the independent-particle approximation. The small energetical overlap of Ta5d or Nb4d derived conduction and valence bands leads to electron and/or hole pockets near the Fermi energy at the 24 Weyl nodes. The nodes give rise to two-(three-)dimensional Dirac cones for the W₁ (W₂) Weyl type. The band dispersion and occupation near the Weyl nodes determine the infrared optical properties. They are dominated by interband transitions, which lead to a deviation from the expected constant values of the imaginary part of the dielectric function. The resulting polarization anisotropy is also visible in the real part of the optical conductivity, whose lineshape deviates from the expected linearity. The details of the Weyl nodes are discussed in relation to recent ARPES results for TaAs and NbP, and compared with measured optical spectra for TaAs. The spectral features of the anisotropic and tilted Weyl fermions are restricted to low excitation energies above absorption onsets due to the band occupation.

Electronic and optical properties of topological semimetal Cd3As2

Using ab initio density functional theory the band structure and the dielectric function of a bct Cd₃As₂ crystal are calculated. We find a Dirac semimetal with two Dirac nodes k_± near the Γ point on the tetragonal axis. The bands near the Fermi level exhibit a linear behavior. The resulting Dirac cones are anisotropic and the electron-hole symmetry is destroyed along the tetragonal axis. Along this axis the symmetry-protected band linearity only exists in a small energy interval. The Dirac cones seemingly found by ARPES in a wider energy range are interpreted in terms of pseudo-linear bands. The behavior as 3D graphene-like material is traced back to As p orbital pointing to Cd vacancies, in directions which vary throughout the unit cell. Because of the Dirac nodes the dielectric functions (imaginary part) show a plateau for vanishing frequencies whose finite value is proportional to the Sommerfeld fine structure constant but varies with the light polarization. The consequences of the anisotropy of the Dirac cones are highlighted for the polarization dependence of the infrared optical conductivity.

Amorphous Ge quantum dots embedded in crystalline Si: ab initio results

We study amorphous Ge quantum dots embedded in a crystalline Si matrix through structure modeling and simulation using ab initio density functional theory including spin-orbit interaction and quasiparticle effects. Three models are generated by replacing a spherical region within diamond Si by Ge atoms and creating a disordered bond network with appropriate density inside the Ge quantum dot. After total-energy optimisations of the atomic geometry we compute the electronic and optical properties. We find three major effects: (i) the resulting nanostructures adopt a type-I heterostructure character; (ii) the lowest optical transitions occur only within the Ge quantum dots, and do not involve or cross the Ge-Si interface. (iii) for larger amorphous Ge quantum dots, with diameters of about 2.0 and 2.7 nm, absorption peaks appear in the mid-infrared spectral region. These are promising candidates for intense luminescence at photon energies below the gap energy of bulk Ge.

Electronic structure and optical properties of Si, Ge and diamond in the lonsdaleite phase

Crystalline semiconductors may exist in different polytypic phases with significantly different electronic and optical properties. In this paper, we calculate the electronic structure and optical properties of diamond, Si and Ge in the lonsdaleite (hexagonal diamond) phase using a transferable model empirical pseudopotential method with spin–orbit interactions. We calculate their band structures and extract various relevant parameters. Differences between the cubic and hexagonal phases are highlighted by comparing their densities of states. While diamond and Si remain indirect gap semiconductors in the lonsdaleite phase, Ge transforms into a direct gap semiconductor with a much smaller bandgap. We also calculate complex dielectric functions for different optical polarizations and find strong optical anisotropy. We further provide expansion parameters for the dielectric functions in terms of Lorentz oscillators.

Optical absorption and emission of α-Sn nanocrystals from first principles

We investigate the optical properties of hydrogenated α-Sn nanocrystals up to diameters of 3.6 nm in the framework of an ab initio pseudopotential method including spin-orbit interaction (SOI) and the repeated supercell approximation. The fundamental absorption and emission edges are determined including quasiparticle effects and electron-hole interaction. The atomic geometries in the ground and excited electronic states follow from total energy optimization. We discuss the oscillator strengths of the optical absorption near the fundamental gaps for the most important transitions. We demonstrate that the spectra can only be correctly described including SOI. The strongly size-dependent Stokes shifts between optical absorption and emission are shown to be mainly a consequence of the different atomic geometries.

Massive Dirac quasiparticles in the optical absorbance of graphene, silicene, germanene, and tinene

We present first-principles studies of the optical absorbance of the group IV honeycomb crystals graphene, silicene, germanene, and tinene. We account for many-body effects on the optical properties by using the non-local hybrid functional HSE06. The optical absorption peaks are blueshifted due to quasiparticle corrections, while the influence on the low-frequency absorbance remains unchanged and reduces to a universal value related to the Sommerfeld fine structure constant. At the Dirac points spin-orbit interaction opens fundamental band gaps; parabolic bands with a very small effective mass emerge. Consequently, the low-frequency absorbance is modified with a spin-orbit-induced transparency region and an increase of the absorbance at the fundamental absorption edge.

Influence of SiO2 matrix on electronic and optical properties of Si nanocrystals

Based on ab initio density functional theory we present electronic properties and the optical response for Si nanocrystals embedded in amorphous SiO(2) networks. Quasi-spherical dots with diameters from 0.8 to 1.6 nm are investigated. The results for Si nanocrystals embedded in SiO(2) are compared with corresponding results for hydrogenated Si nanocrystals of the same size. The calculations show the influence of the interface between nanocrystal and matrix on the electronic properties. The results are compared with recent experimental data and discussed in detail. As striking features, strong reductions of the gaps and their diameter variation are predicted due to the oxide presence. Electronic confinement mainly influences the absorption edge while at higher photon energies only broad peaks at almost fixed positions occur.

Ab initio study of optical properties of rhodamine 6G molecular dimers

Equilibrium atomic geometries of rhodamine 6G (R6G) dye molecule dimers are studied using density-functional theory. Electron-energy structure and optical properties of R6G H and J dimers are calculated using the generalized gradient approximation method with ab initio pseudopotentials. Our theory predicts substantial redshifts or blueshifts of the optical absorption spectra of R6G dye molecules after aggregation in J or H dimers, respectively. Predicted optical properties of R6G dimers are interpreted in terms of interatomic and intermolecular interactions. Results of the calculations are discussed in comparison with experimental data.

Coupling of nonlocal potentials to electromagnetic fields

Nonlocal Hamiltonians are used widely in first-principles quantum calculations; the nonlocality stems from eliminating undesired degrees of freedom, e.g., core electrons. To date, attempts to couple nonlocal systems to external electromagnetic (EM) fields have been heuristic or limited to weak or long wavelength fields. Using Feynman path integrals, we derive an exact, closed-form coupling of arbitrary EM fields to nonlocal systems. Our results justify and clarify the couplings used to date and are essential for systematic computation of linear and especially nonlinear responses.