Monte Carlo simulation of In surface segregation during the growth of InxGa1-xAs on GaAs(001)

Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps

The compositional non-uniformity in AlGaN grown on HVPE-AlN with large macro-steps was effectively suppressed by metallization pretreatment using mixed metal–organic flows.

Surface Reconstructions and III-V Stoichiometry: The Case of Cubic and Hexagonal GaN

Surface reconstructions for MBE grown GaN are identified. Different cases are considered according to the type of substrate or crystal symmetry and surface phase diagrams are obtained. Through different examples, it is shown how growth monitoring can be efficiently achieved through the use of surface reconstructions. Finally, from the observation that a residual arsenic overpressure in the MBE chamber changes the surface reconstructions of cubic (001) GaN grown onto 3C-SiC (001) substrates to that commonly observed for GaN growth on (001) GaAs, it is proposed that arsenic might be a surfactant for nitride growth.