Evidence for three surface components in the 3d core-level photoemission spectra of Ge(100)-(2 x 1) surface

Microscopic Views of Atomic and Molecular Oxygen Bonding with epi Ge(001)-2 × 1 Studied by High-Resolution Synchrotron Radiation Photoemission

In this paper, we investigate the embryonic stage of oxidation of an epi Ge(001)-2 × 1 by atomic oxygen and molecular O₂ via synchrotron radiation photoemission. The topmost buckled surface with the up- and down-dimer atoms, and the first subsurface layer behaves distinctly from the bulk by exhibiting surface core-level shifts in the Ge 3d core-level spectrum. The O₂ molecules become dissociated upon reaching the epi Ge(001)-2 × 1 surface. One of the O atoms removes the up-dimer atom and the other bonds with the underneath Ge atom in the subsurface layer. Atomic oxygen preferentially adsorbed on the epi Ge(001)-2 ×1 in between the up-dimer atoms and the underneath subsurface atoms, without affecting the down-dimer atoms. The electronic environment of the O-affiliated Ge up-dimer atoms becomes similar to that of the down-dimer atoms. They both exhibit an enrichment in charge, where the subsurface of the Ge layer is maintained in a charge-deficient state. The dipole moment that was originally generated in the buckled reconstruction no longer exists, thereby resulting in a decrease in the ionization potential. The down-dimer Ge atoms and the back-bonded subsurface atoms remain inert to atomic O and molecular O₂, which might account for the low reliability in the Ge-related metal-oxide-semiconductor (MOS) devices.

Skin Bond Electron Relaxation Dynamics of Germanium Manipulated by Interactions with H2 , O2 , H2 O, H2 O2 , HF, and Au

Although germanium performs amazingly well at sites surrounding hetero-coordinated impurities and under-coordinated defects or skins with unusual properties, having important impact on electronic and optical devices, understanding the behavior of the local bonds and electrons at such sites remains a great challenge. Here we show that a combination of density functional theory calculations, zone-resolved X-ray photoelectron spectroscopy, and bond order length strength correlation mechanism has enabled us to clarify the physical origin of the Ge 3d core-level shift for the under-coordinated (111) and (100) skin with and without hetero-coordinated H2 , O2 , H2 O, H2 O2 , HF impurities. The Ge 3d level shifts from 27.579 (for an isolated atom) by 1.381 to 28.960 eV upon bulk formation. Atomic under-coordination shifts the binding energy further to 29.823 eV for the (001) and to 29.713 eV for the (111) monolayer skin. Addition of O2 , HF, H2 O, H2 O2 and Au impurities results in quantum entrapment by different amounts, but H adsorption leads to polarization.

In situ synchrotron radiation photoelectron spectroscopy study of the oxidation of the Ge(100)-2 × 1 surface by supersonic molecular oxygen beams

In situ synchrotron radiation photoelectron spectroscopy was performed during the oxidation of the Ge(100)-2 × 1 surface induced by a molecular oxygen beam with various incident energies up to 2.2 eV from the initial to saturation coverage of surface oxides. The saturation coverage of oxygen on the clean Ge(100) surface was much lower than one monolayer and the oxidation state of Ge was +2 at most. This indicates that the Ge(100) surface is so inert toward oxidation that complete oxidation cannot be achieved with only pure oxygen (O2) gas, which is in strong contrast to Si surfaces. Two types of dissociative adsorption, trapping-mediated and direct dissociation, were confirmed by oxygen uptake measurements depending on the incident energy of O2. The direct adsorption process can be activated by increasing the translational energy, resulting in an increased population of Ge(2+) and a higher final oxygen coverage. We demonstrated that hyperthermal O2 beams remarkably promote the room-temperature oxidation with novel atomic configurations of oxides at the Ge(100) surface. Our findings will contribute to the fundamental understanding of oxygen adsorption processes at 300 K from the initial stages to saturated oxidation.