Conduction in LaCoO3 by small-polaron hopping below room temperature

Charge-Carrier Mobility and Localization in Semiconducting Cu2AgBiI6 for Photovoltaic Applications

Lead-free silver-bismuth semiconductors have become increasingly popular materials for optoelectronic applications, building upon the success of lead halide perovskites. In these materials, charge-lattice couplings fundamentally determine charge transport, critically affecting device performance. In this study, we investigate the optoelectronic properties of the recently discovered lead-free semiconductor Cu₂AgBiI₆ using temperature-dependent photoluminescence, absorption, and optical-pump terahertz-probe spectroscopy. We report ultrafast charge-carrier localization effects, evident from sharp THz photoconductivity decays occurring within a few picoseconds after excitation and a rise in intensity with decreasing temperature of long-lived, highly Stokes-shifted photoluminescence. We conclude that charge carriers in Cu₂AgBiI₆ are subject to strong charge-lattice coupling. However, such small polarons still exhibit mobilities in excess of 1 cm² V^-1 s^-1 at room temperature because of low energetic barriers to formation and transport. Together with a low exciton binding energy of ∼29 meV and a direct band gap near 2.1 eV, these findings highlight Cu₂AgBiI₆ as an attractive lead-free material for photovoltaic applications.

Roles of Re-entrant cluster glass state and spin-lattice coupling in magneto-dielectric behavior of giant dielectric double perovskite La1.8Pr0.2CoFeO6

La based Co-Fe combined double perovskite (La1.8Pr0.2CoFeO6) was synthesized and the dielectric (zero-field and in-field), magnetic, x-ray absorption and Raman spectroscopy measurements have been investigated for La1.8Pr0.2CoFeO6double perovskite. The existence of re-entrant cluster glass state is observed. The magneto-dielectric (MD) is found in two temperature regions (25-80 K and 125-275 K). It has been demonstrated that the observed MD at low and high temperatures are respectively due to the spin freezing and the spin-lattice coupling. Furthermore, the very large dielectric constant and the low loss suggest that La1.8Pr0.2CoFeO6is very important from the application point of view.

The spin–orbit–phonon coupling and crystalline elasticity of LaCoO3 perovskite

Based on an integrated study of magnetic susceptibility, specific heat, and thermal expansion of single-crystal LaCoO₃ free from cobalt and oxygen vacancies, two narrow spin gaps are identified before and after the phonon softening of gap size ΔE ∼ 0.5 meV in a CoO₆-octahedral crystal electric field (CEF) and the thermally activated spin gap Q ∼ 25 meV, respectively. Significant excitation of Co³⁺ spins from a low-spin (LS) to a high-spin (HS) state is confirmed by the thermal activation behavior of spin susceptibility χ^S of energy gap Q ∼ 25 meV, which follows a two-level Boltzmann distribution to saturate at a level of 50% LS/50% HS statistically above ∼200 K, without the inclusion of a postulated intermediate spin (IS) state. A threefold increase in the thermal expansion; coefficient (α) across the same temperature range as that of thermally activated HS population growth is identified, which implies the non-trivial spin–orbit–phonon coupling caused the bond length of Co^3+(LS↔HS)–O fluctuation and the local lattice distortion. The unusually narrow gap of ΔE ∼ 0.5 meV for the CoO₆ octahedral CEF between e_g–t_2g indicates a more isotropic negative charge distribution within the octahedral CEF environment, which is verified by the Electron Energy Loss Spectroscopy (EELS) study to show nontrivial La–O covalency.

Considering the before and after phonon softening, the gap in a CoO₆-octahedral crystal electric fields (CEF) and the thermally activated spin gap, were observed of ∼0.5 meV and Q ∼ 25 meV in defect-free LaCoO₃ single crystal, respectively.

Magnetoelectric and magnetodielectric coupling and microwave resonator characteristics of Ba0.5Sr0.5Nb2O6/CoCr0.4Fe1.6O4 multiferroic composite

A multiferroic composite consisting of single phases of 30 vol.% magnetostrictive ferrite and 70 vol.% relaxor ferroelectric has been synthesized. The ferrite exhibits a diffuse dielectric phase transition (DPT)with the transition temperature varying from 450 K to 600 K and an activation energy of 0.29 eV. Magnetically, it has a soft behavior with 70 emug^-1 saturation magnetization and a Curie transition at ~620 K. The relaxor ferroelectric phase on the other hand exhibits two clear DPTs at 390 K-400 K and 150 K-300 K. The composite of these two shows a soft ferromagnetic behavior reminiscent of the ferrite along with 3 DPTs. There is strong coupling between the two orders - magnetostrictive and piezoelectric in the composite. The capacitance decreases by 45% in the presence of magnetic field corresponding to a sensitivity of 0.9% kOe^-1, an extremely large value. The magnetoelectric coupling constant is found to be 20.6 mVcm^-1Oe^-1, a large value for a bulk composite. Microwave band stop filters of different thicknesses made from the composite have resonant frequencies which upshift in the presence of magnetic field indicating a multiferroic behavior with possibility for electric field tuning of resonant frequency.

Point-defect-induced colossal dielectric behavior in GaAs single crystals

We herein reported colossal dielectric constant (CDC) behavior in GaAs single crystals.

Step terrace tuned anisotropic transport properties of highly epitaxial LaBaCo2O5.5+δ thin films on vicinal SrTiO3 substrates

Highly epitaxial LaBaCo2O5.5+δ (LBCO) thin films were grown on different miscut (001) SrTiO3 substrates (miscut angle of 0.5°, 3.0°, and 5.0°) to study the substrate surface step terrace effect on the in-plane electrical transport properties. The microstructure studies by X-ray diffraction and transmission electron microscopy indicate that the as-grown films are A-site disordered cubic perovskite structures with the c-axis highly oriented along the film growth direction. The four-probe scanning tunneling microscopy (STM) studies show that the LBCO thin films grown on the vicinal SrTiO3 substrates have a typical semiconductor behavior with the substrate surface terrace step inducing anisotropic electronic transport properties. These results indicate that in highly epitaxial thin films the surface terrace step induced local strains can play an important role in controlling the electronic transport properties and the anisotropic nature.