Method for evaluation of the Ehrlich-Schwoebel barrier to interlayer transport in metal homoepitaxy

Van der Waals epitaxial growth of single-crystal molecular film

Epitaxy is the cornerstone of semiconductor technology, enabling the fabrication of single-crystal film. Recent advancements in van der Waals (vdW) epitaxy have opened new avenues for producing wafer-scale single-crystal 2D atomic crystals. However, when it comes to molecular crystals, the overall weak vdW force means that it is a significant challenge for small molecules to form a well-ordered structure during epitaxy. Here we demonstrate that the vdW epitaxy of Sb2O3 molecular crystal, where the whole growth process is governed by vdW interactions, can be precisely controlled. The nucleation is deterministically modulated by epilayer-substrate interactions and unidirectional nuclei are realized through designing the lattice and symmetry matching between epilayer and substrate. Moreover, the growth and coalescence of nuclei as well as the layer-by-layer growth mode are kinetically realized via tackling the Schwoebel-Ehrlich barrier. Such precise control of vdW epitaxy enables the growth of single-crystal Sb2O3 molecular film with desirable thickness. Using the ultrathin highly oriented Sb2O3 film as a gate dielectric, we fabricated MoS2-based field-effect transistors that exhibit superior device performance. The results substantiate the viability of precisely managing molecule alignment in vdW epitaxy, paving the way for large-scale synthesis of single-crystal 2D molecular crystals.

Confined VLS Growth of Single-Layer 2D Tungsten Nitrides

Two-dimensional (2D) metal nitrides have garnered significant interest due to their potential applications in future electronics and quantum systems. However, the synthesis of such materials with sufficient uniformity and at relevant scales remains an unaddressed challenge. This study demonstrates the potential of confined growth to control and enhance the morphology of 2D metal nitrides. By restricting the reaction volume of vapor-liquid-solid reactions, an enhanced precursor concentration was achieved that reduces the nucleation density, resulting in larger grain sizes and suppression of multilayer growth. Detailed characterization reveals the importance of balancing the energetic and kinetic aspects of tungsten nitride formation toward this ability. The introduction of a promoter enabled the realization of large-scale, single-layer tungsten nitride with a uniform and high interfacial quality. Finally, our advance in morphology control was applied to the production of edge-enriched 2D tungsten nitrides with significantly enhanced hydrogen evolution ability, as indicated by an unprecedented Tafel slope of 55 mV/dec.

Characterization of step-edge barrier crossing of para-sexiphenyl on the ZnO (101[combining macron]0) surface

Mass transport processes of conjugated organic molecules (COMs) on inorganic surfaces are essential elements in thin film deposition for hybrid optoelectronic devices. Defects and in particular surface step-edges dictate the molecular nucleation and growth morphology, which itself determine many physical properties of the resulting hybrid interface. Here, we explore the detailed molecular kinetics and transport rates of a single physisorbed para-sexiphenyl (p-6P) molecule crossing a step-edge (a "hetero-Ehrlich-Schwoebel barrier") on the inorganic ZnO (101[combining macron]0) surface by a combination of all-atom molecular dynamics simulations and passage time theory. We determine temperature- and charge-dependent (free) energy landscapes, position-dependent diffusion coefficients, and ultimately the mean first passage time over the step-edges. We find two completely different step-edge crossing mechanisms, the occurrence and rates of which simultaneously depend on both electrostatic and thermal molecule-surface coupling. In weakly coupled systems, the molecule crosses the step relatively quickly (in nanoseconds) by log-roll mechanisms while for strongly coupled systems, it crosses relatively slowly (in microseconds) in a strictly perpendicular fashion. In the latter process, "internal friction" from intramolecular bending and torsional degrees of freedom contribute a significant corrugation to the overall crossing barrier. Furthermore, we show that crossing pathways can also change qualitatively with step-edge height. The great complexity in hetero-barrier crossing of COMs (in contrast to simple atoms) revealed in this study has implications on the interpretation and possible control of nucleation and growth mechanisms at surface defects in hybrid systems.

Cluster diffusion and dissociation in the kinetics of layer growth: An atomic view

Data on diffusion and dissociation of single Pt clusters on Pt(111), available for the first time from field ion microscope observations, are used to make predictions about nanoscale phenomena by solving the mean-field differential equations for growth. In the submonolayer regime, cluster dissociation is found to be much more important than diffusion of clusters in reducing the saturation island density. Cluster dissociation also significantly affects the nucleation of a second layer on top of existing clusters and must be considered on an equal footing with interlayer transport over cluster edges.