Reaction of I2 with the (001) surfaces of GaAs, InAs, and InSb. II. Ordering of the iodine overlayer

Evaluation of the donor ability of phenanthrolines in iridium complexes by means of synchrotron radiation photoemission spectroscopy and DFT calculations

Synchrotron radiation XPS measurements of Ir 4f, N 1s and I 4d core levels for the compounds Ir(cod)(N-N)X (cod=1,5-cyclooctadiene; N-N=1,10-phenanthroline and substituted derivatives; X=Cl, I) are reported. The compounds Ir(cod)(3,4,7,8-Me4phen)X (3,4,7,8-Me4phen=3,4,7,8-tetramethyl-1,10-phenanthroline) were structurally characterized by single crystal X-ray analyses. The comparison among the binding energies shows differences that are interpreted in terms of electron density variations due to the change of the phenanthroline substituents. Such analysis provides a quantitative evaluation of the ligand donor properties. The trend in the measured binding energies is confirmed by the results obtained by DFT DeltaSCF calculations, which include final state relaxation effects, while the specific role of initial state effects has been assessed in terms of the Kohn-Sham eigenvalues analysis.

FUNDAMENTAL STUDIES OF HALOGEN REACTIONS WITH III-V SEMICONDUCTOR SURFACES

▪ Abstract  It is technologically important to understand how halogens react with semiconductor surfaces because halogen compounds are commonly used to etch semiconductor wafers in the microelectronics industry. Halogens are also model adsorbates for studying chemisorption on covalently bonded materials, such as semiconductors, owing to the simple nature of the bonds that they form. The growing use of III-V materials in the manufacture of optoelectronic devices has prompted investigations of the reactions of molecular halogens (XeF2, Cl2, Br2, and I2) with III-V semiconductor surfaces (GaAs, GaSb, InP, InAs, and InSb). This review examines the more fundamental of these investigations, which involve model systems in ultra-high vacuum, focusing on the chemistry of the halogen surface reactions and the physical and electronic structure of the reacted surfaces.