Coupled free-carrier and exciton relaxation in optically excited semiconductors

Ultrafast probes of electron-hole transitions between two atomic layers

Phase transitions of electron-hole pairs on semiconductor/conductor interfaces determine fundamental properties of optoelectronics. To investigate interfacial dynamical transitions of charged quasiparticles, however, remains a grand challenge. By employing ultrafast mid-infrared microspectroscopic probes to detect excitonic internal quantum transitions and two-dimensional atomic device fabrications, we are able to directly monitor the interplay between free carriers and insulating interlayer excitons between two atomic layers. Our observations reveal unexpected ultrafast formation of tightly bound interlayer excitons between conducting graphene and semiconducting MoSe₂. The result suggests carriers in the doped graphene are no longer massless, and an effective mass as small as one percent of free electron mass is sufficient to confine carriers within a 2D hetero space with energy 10 times larger than the room-temperature thermal energy. The interlayer excitons arise within 1 ps. Their formation effectively blocks charge recombination and improves charge separation efficiency for more than one order of magnitude.

Semiconductor excitons in new light

Excitons are quasi-particles that form when Coulomb-interacting electrons and holes in semiconductors are bound into pair states. They have many features analogous to those of atomic hydrogen. Because of this, researchers are interested in exploring excitonic phenomena, from optical, quantum-optical and thermodynamic transitions to the possible condensation of excitons into a quantum-degenerate state. Excitonic signatures commonly appear in the optical absorption and emission of direct-gap semiconductor systems. However, the precise properties of incoherent exciton populations in such systems are difficult to determine and are the subject of intense debate. We review recent contributions to this discussion, and argue that to obtain detailed information about exciton populations, conventional experimental techniques should be supplemented by direct quasi-particle spectroscopy using the relatively newly available terahertz light sources. Finally, we propose a scheme of quantum-optical excitation to generate quantum-degenerate exciton states directly.

Ultrafast terahertz probes of transient conducting and insulating phases in an electron-hole gas

Many-body systems in nature exhibit complexity and self-organization arising from seemingly simple laws. For example, the long-range Coulomb interaction between electrical charges has a simple form, yet is responsible for a plethora of bound states in matter, ranging from the hydrogen atom to complex biochemical structures. Semiconductors form an ideal laboratory for studying many-body interactions of electronic quasiparticles among themselves and with lattice vibrations and light. Oppositely charged electron and hole quasiparticles can coexist in an ionized but correlated plasma, or form bound hydrogen-like pairs called excitons. The pathways between such states, however, remain elusive in near-visible optical experiments that detect a subset of excitons with vanishing centre-of-mass momenta. In contrast, transitions between internal exciton levels, which occur in the far-infrared at terahertz (1012 s(-1)) frequencies, are independent of this restriction, suggesting their use as a probe of electron-hole pair dynamics. Here we employ an ultrafast terahertz probe to investigate directly the dynamical interplay of optically-generated excitons and unbound electron-hole pairs in GaAs quantum wells. Our observations reveal an unexpected quasi-instantaneous excitonic enhancement, the formation of insulating excitons on a 100-ps timescale, and the conditions under which excitonic populations prevail.