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Bigioni TP, Schaaff TG, Wyrwas RB, Harrell LE, Whetten RL, First PN. Scanning Tunneling Microscopy Determination of Single Nanocrystal Core Sizes via Correlation with Mass Spectrometry. J Phys Chem B 2004. [DOI: 10.1021/jp0376931] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- T. P. Bigioni
- School of Chemistry, Georgia Institute of Technology, Atlanta, Georgia 30332-0400, School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332-0430, and Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6365
| | - T. G. Schaaff
- School of Chemistry, Georgia Institute of Technology, Atlanta, Georgia 30332-0400, School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332-0430, and Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6365
| | - R. B. Wyrwas
- School of Chemistry, Georgia Institute of Technology, Atlanta, Georgia 30332-0400, School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332-0430, and Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6365
| | - L. E. Harrell
- School of Chemistry, Georgia Institute of Technology, Atlanta, Georgia 30332-0400, School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332-0430, and Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6365
| | - R. L. Whetten
- School of Chemistry, Georgia Institute of Technology, Atlanta, Georgia 30332-0400, School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332-0430, and Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6365
| | - P. N. First
- School of Chemistry, Georgia Institute of Technology, Atlanta, Georgia 30332-0400, School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332-0430, and Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6365
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Abstract
▪ Abstract Growth of thin films from atoms deposited from the gas phase is intrinsically a non-equilibrium phenomenon dictated by a competition between kinetics and thermodynamics. Precise control of the growth becomes possible only after achieving an understanding of this competition. In this review, we present an atomistic view of the various kinetic aspects in a model system, the epitaxy of Si on Si(001), as revealed by scanning tunneling microscopy and total-energy calculations. Fundamentally important issues investigated include adsorption dynamics and energetics, adatom diffusion, nucleation, sticking, and detachment. We also briefly discuss the inverse process of growth, removal by sputtering or etching. We aim our discussions to an understanding at a quantitative level whenever possible.
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Affiliation(s)
- Zhenyu Zhang
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6032
- University of Wisconsin, Madison, Wisconsin 53706
- *present address: Komag, Inc., 275 South Hillview Drive, Milpitas, California 95035
| | - Fang Wu
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6032
- University of Wisconsin, Madison, Wisconsin 53706
- *present address: Komag, Inc., 275 South Hillview Drive, Milpitas, California 95035
| | - Max G. Lagally
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6032
- University of Wisconsin, Madison, Wisconsin 53706
- *present address: Komag, Inc., 275 South Hillview Drive, Milpitas, California 95035
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Abstract
Growth of thin films from atoms deposited from the gas phase is intrinsically a nonequilibrium phenomenon governed by a competition between kinetics and thermodynamics. Precise control of the growth and thus of the properties of deposited films becomes possible only after an understanding of this competition is achieved. Here, the atomic nature of the most important kinetic mechanisms of film growth is explored. These mechanisms include adatom diffusion on terraces, along steps, and around island corners; nucleation and dynamics of the stable nucleus; atom attachment to and detachment from terraces and islands; and interlayer mass transport. Ways to manipulate the growth kinetics in order to select a desired growth mode are briefly addressed.
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Affiliation(s)
- Z Zhang
- Z. Y. Zhang is a research staff member in the Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6032, USA. E-mail: . M. G. Lagally is the E.W. Mueller Professor in the Departments of Materials Science and Engineering and Physics, University of Wisconsin, Madison, WI 53706, USA. E-mail:
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