Noise temperature of n+nn+ GaAs structures

Terahertz oscillations in ultra-thin n-In(0.53)Ga(0.47)As ungated channels

Using a self-consistent Monte Carlo simulator we investigate the spectrum of voltage fluctuations of an n-type InGaAs two-terminal layer of variable thickness W in the range 1-100 nm and variable length L in the range 0.01-10 µm embedded in an external dielectric medium. Calculations are performed at T = 300 K for different dopings and in the presence of an external bias of increasing strength. When the bias is well below the threshold for the Gunn effect the spectrum peaks at the plasma oscillations of the electron gas. For W≥100 nm and carrier concentrations of 10(17)-10(18) cm(-3) the peaks are in good agreement with the standard three-dimensional (3D) expression of the plasma frequency. For W≤10 nm the results exhibit a plasma frequency that depends on the length of the layer, thus implying that the oscillation mode is dispersive. The corresponding frequency covers a wide range of values 0.1-10 THz and is in agreement with the two-dimensional (2D) expression of the plasma frequency obtained for a collisionless regime within the in-plane approximation for the electric field. A region of cross-over between the 2D and 3D behaviours of the plasma frequency is shown for W>10 nm. When the bias is above the threshold for the Gunn effect, we observe the washing out of the plasma peak and the onset of a frequency peak associated with the transit time of the Gunn domain located in the sub-terahertz frequency region.