Barghathi H, Vojta T. Random field disorder at an absorbing state transition in one and two dimensions.
Phys Rev E 2016;
93:022120. [PMID:
26986301 DOI:
10.1103/physreve.93.022120]
[Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/20/2015] [Indexed: 11/07/2022]
Abstract
We investigate the behavior of nonequilibrium phase transitions under the influence of disorder that locally breaks the symmetry between two symmetrical macroscopic absorbing states. In equilibrium systems such "random-field" disorder destroys the phase transition in low dimensions by preventing spontaneous symmetry breaking. In contrast, we show here that random-field disorder fails to destroy the nonequilibrium phase transition of the one- and two-dimensional generalized contact process. Instead, it modifies the dynamics in the symmetry-broken phase. Specifically, the dynamics in the one-dimensional case is described by a Sinai walk of the domain walls between two different absorbing states. In the two-dimensional case, we map the dynamics onto that of the well studied low-temperature random-field Ising model. We also study the critical behavior of the nonequilibrium phase transition and characterize its universality class in one dimension. We support our results by large-scale Monte Carlo simulations, and we discuss the applicability of our theory to other systems.
Collapse