Quantitative analysis of nonequilibrium spin injection into molecular tunnel junctions

Effect of Contact Geometry on Spin Transport in Amine-Ended Single-Molecule Magnetic Junctions

We employ the first-principles calculation with non-equilibrium Green's function method to comprehensively investigate the crucial role of interfacial geometry in spin transport properties of Co/1,4-benzenediamine (BDA)/Co single-molecule magnetic junctions (SMMJs). Two bonding mechanisms are proposed for the hard-hard Co-N coupling: (1) the covalent bonding between the H-dissociated amine linker and spin-polarized Co apex atoms and (2) the dative interaction between the H-non-dissociated (denoted by +H) amine linker and Co apex atoms. The former covalent contact dominates the π-resonance interfacial spin selection that can be well preserved in H-dissociated cases regardless of the choice of top, bridge, and hollow contact sites. From our detailed analyses of spin-polarized transmission spectra, local density of states, and molecular density of states, the underlying mechanism is that the strong hybridization between Co-d, N-p y , and the π-orbital of the phenyl ring in dissociated cases renders the 2-fold HOMO (4-fold LUMO) of the central molecule closer to the Fermi energy. In contrast, the enlarged Co-N bond length of the latter dative contact in the H-non-dissociated case not only destroys the spinterface coupling but also blocks the spin injection. This theoretical work may provide vital and practical insights to illustrate the spin transport property in real amine-ended SMMJs since the contact geometries and interfacial bond mechanisms remain unclear during the breaking junction technique.

The spin filtering effect and negative differential behavior of the graphene-pentalene-graphene molecular junction: a theoretical analysis

Density functional theory (DFT) combined with nonequilibrium Green's function (NEGF) formalism are used to investigate the effects of substitutional doping by nitrogen and sulfur on transport properties of AGNR-pentalene-AGNR nanojunction. A considerable spin filtering capability in a wide bias range is observed for all systems, which may have potential application in spintronics devices. Moreover, all model devices exhibit a negative differential effect with considerable peak-to-valley ratio. Thus, our findings provide a way to produce multifunctional spintronic devices based on nitrogen and sulfur doped pentalene-AGNR nanojunctions. The underlying mechanism for this interesting behavior was exposed by analyzing the transmission spectrum as well as the electrostatic potential distribution. In addition, a system doped with an odd number of dopant shows a rectifying efficiency comparable to other systems. The above findings strongly imply that such a multifunctional molecular device would be a useful candidate for molecular electronics. Graphical abstract The graphene-pentalene-graphene molecular junction.

Pure spin current and phonon thermoelectric transport in a triangulene-based molecular junction

A triangulene-based molecular junction: a favorable spintronic device with pure spin current and efficient phonon thermoelectric transport.

Predictive DFT-based approaches to charge and spin transport in single-molecule junctions and two-dimensional materials: successes and challenges

CONSPECTUS: The emerging field of flexible electronics based on organics and two-dimensional (2D) materials relies on a fundamental understanding of charge and spin transport at the molecular and nanoscale. It is desirable to make predictions and shine light on unexplained experimental phenomena independently of experimentally derived parameters. Indeed, density functional theory (DFT), the workhorse of first-principles approaches, has been used extensively to model charge/spin transport at the nanoscale. However, DFT is essentially a ground state theory that simply guarantees correct total energies given the correct charge density, while charge/spin transport is a nonequilibrium phenomenon involving the scattering of quasiparticles. In this Account, we critically assess the validity and applicability of DFT to predict charge/spin transport at the nanoscale. We also describe a DFT-based approach, DFT+Σ, which incorporates corrections to Kohn-Sham energy levels based on many-electron calculations. We focus on single-molecule junctions and then discuss how the important considerations for DFT descriptions of transport can differ in 2D materials. We conclude that when used appropriately, DFT and DFT-based approaches can play an important role in making predictions and gaining insight into transport in these materials. Specifically, we shall focus on the low-bias quasi-equilibrium regime, which is also experimentally most relevant for single-molecule junctions. The next question is how well can the scattering of DFT Kohn-Sham particles approximate the scattering of true quasiparticles in the junction? Quasiparticles are electrons (holes) that are surrounded by a constantly changing cloud of holes (electrons), but Kohn-Sham particles have no physical significance. However, Kohn-Sham particles can often be used as a qualitative approximation to quasiparticles. The errors in standard DFT descriptions of transport arise primarily from errors in the Kohn-Sham energy levels (self-energy errors). These errors are small in the strong-coupling regime where the molecular levels are significantly broadened at the Fermi level but are large in the coherent off-resonant tunneling regime where DFT overestimates conductance by orders of magnitude. The DFT+Σ approach uses a physically motivated, parameter free estimate of the self-energy corrections to correct the energy levels in DFT, giving conductance in quantitative agreement with experiment for a large but nonexhaustive class of single-molecule junctions. In 2D materials, the self-energy error is relatively small, and critical issues stem instead from the large length scales in experiments, which make it necessary to consider band-bending within the 2D material, as well as scattering due to electron-phonon interactions, spin-flip interactions, defects, etc.

Boron nitride nanotubes for spintronics

With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

Nearly perfect spin filter, spin valve and negative differential resistance effects in a Fe4-based single-molecule junction

The spin-polarized transport in a single-molecule magnet Fe₄ sandwiched between two gold electrodes is studied, using nonequilibrium Green's functions in combination with the density-functional theory. We predict that the device possesses spin filter effect (SFE), spin valve effect (SVE), and negative differential resistance (NDR) behavior. Moreover, we also find that the appropriate chemical ligand, coupling the single molecule to leads, is a key factor for manipulating spin-dependent transport. The device containing the methyl ligand behaves as a nearly perfect spin filter with efficiency approaching 100%, and the transport is dominated by transmission through the Fe₄ metal center. However, in the case of phenyl ligand, the spin filter effect seems to be reduced, but the spin valve effect is significantly enhanced with a large magnetoresistance ratio, reaching 1800%. This may be attributed to the blocking effect of the phenyl ligands in mediating transport. Our findings suggest that such a multifunctional molecular device, possessing SVE, NDR and high SFE simultaneously, would be an excellent candidate for spintronics of molecular devices.

Electrical tuning of spin current in a boron nitride nanotube quantum dot

Controlling spin current and magnetic exchange coupling by applying an electric field and achieving high spin injection efficiency at the same time in a nanostructure coupled to ferromagnetic electrodes have been the outstanding challenges in nanoscale spintronics.

Interface effects on tunneling magnetoresistance in organic spintronics with flexible amine-Au links

Organic spintronics is a promising emerging field, but the sign of the tunneling magnetoresistance (TMR) is highly sensitive to interface effects, a crucial hindrance to applications. A key breakthrough in molecular electronics was the discovery of amine-Au link groups that give a reproducible conductance. Using first-principles calculations, we predict that amine-Au links give improved reproducibility in organic spintronics junctions with Au-covered Fe leads. The Au layers allow only states with sp character to tunnel into the molecule, and the flexibility of amine-Au links results in a narrow range of TMR for a fixed number of Au layers. Even as the Au thickness changes, the TMR remains positive as long as the number of Au layers is the same on both sides of the junction. Since the number of Au layers on Fe surfaces or Fe nanoparticles can now be experimentally controlled, amine-Au links provide a route towards robust TMR in organic spintronics.

Quantum transport in alkane molecular wires: effects of binding modes and anchoring groups

Effects of binding modes and anchoring groups on nonequilibrium electronic transport properties of alkane molecular wires are investigated from atomic first-principles based on density functional theory and nonequilibrium Green's function formalism. Four typical binding modes, top, bridge, hcp-hollow, and fcc-hollow, are considered at one of the two contacts. For wires with three different anchoring groups, dithiol, diamine, or dicarboxylic acid, the low bias conductances resulting from the four binding modes are all found to have either a high or a low value, well consistent with recent experimental observations. The trend can be rationalized by the behavior of electrode-induced gap states at small bias. When bias increases to higher values, states from the anchoring groups enter into the bias window and contribute significantly to the tunneling process so that transport properties become more complicated for the four binding modes. Other low bias behaviors including the values of the inverse length scale for tunneling characteristic, contact resistance, and the ratios of the high/low conductance values are also calculated and compared to experimental results. The conducting capabilities of the three anchoring groups are found to decrease from dithiol, diamine to dicarboxylic-acid, largely owing to a decrease in binding strength to the electrodes. Our results give a clear microscopic picture to the transport physics and provide reasonable qualitative explanations for the corresponding experimental data.

Efficient spin transitions in inelastic electron tunneling spectroscopy

The excitation of the spin degrees of freedom of an adsorbed atom by tunneling electrons is computed using strong coupling theory. Recent measurements [Heinrich, Science 306, 466 (2004)] reveal that electron currents in a magnetic system efficiently excite its magnetic moments. Our theory shows that the incoming electron spin strongly couples with that of the adsorbate so that memory of the initial spin state is lost, leading to large excitation efficiencies. First-principles transmissions are evaluated in quantitative agreement with the experiment.