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Cui Y, Li Z, Chen H, Wu Y, Chen Y, Pei K, Wu T, Xie N, Che R, Qiu X, Liu Y, Yuan Z, Wu Y. Antisymmetric planar Hall effect in rutile oxide films induced by the Lorentz force. Sci Bull (Beijing) 2024; 69:2362-2369. [PMID: 38944633 DOI: 10.1016/j.scib.2024.06.009] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/02/2024] [Revised: 05/06/2024] [Accepted: 06/03/2024] [Indexed: 07/01/2024]
Abstract
The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film. Despite the increasing theoretical proposals on the Hall effect to the in-plane field or magnetization in various special systems induced by the Berry curvature, such an unconventional Hall effect has only been experimentally reported in Weyl semimetals and in a heterodimensional superlattice. Here, we report an unambiguous experimental observation of the antisymmetric planar Hall effect (APHE) with respect to the in-plane magnetic field in centrosymmetric rutile RuO2 and IrO2 single-crystal films. The measured Hall resistivity is found to be linearly proportional to the component of the applied in-plane magnetic field along a particular crystal axis and to be independent of the current direction or temperature. Both the experimental observations and theoretical calculations confirm that the APHE in rutile oxide films is induced by the Lorentz force. Our findings can be generalized to ferromagnetic materials for the discovery of anomalous Hall effects and quantum anomalous Hall effects induced by in-plane magnetization. In addition to significantly expanding knowledge of the Hall effect, this work opens the door to explore new members in the Hall effect family.
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Affiliation(s)
- Yongwei Cui
- Department of Physics, State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
| | - Zhaoqing Li
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China; Interdisciplinary Center for Theoretical Physics and Information Sciences, Fudan University, Shanghai 200433, China
| | - Haoran Chen
- Department of Physics, State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
| | - Yunzhuo Wu
- Department of Physics, State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
| | - Yue Chen
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China; Interdisciplinary Center for Theoretical Physics and Information Sciences, Fudan University, Shanghai 200433, China; Center for Advanced Quantum Studies and Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Ke Pei
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering & Technology, Fudan University, Shanghai 200438, China
| | - Tong Wu
- Department of Physics, State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
| | - Nian Xie
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Renchao Che
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering & Technology, Fudan University, Shanghai 200438, China; Zhejiang Laboratory, Hangzhou 311100, China
| | - Xuepeng Qiu
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Yi Liu
- Center for Advanced Quantum Studies and Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Zhe Yuan
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China; Interdisciplinary Center for Theoretical Physics and Information Sciences, Fudan University, Shanghai 200433, China.
| | - Yizheng Wu
- Department of Physics, State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China; Shanghai Research Center for Quantum Sciences, Shanghai 201315, China; Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University, Shanghai 200433, China.
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Xu H, Wang X, Tang L, Yang K, Yang D, Long Y, Tang K. New Synthetic Route to Synthesize Li and 1,2‐Diaminopropane‐Intercalated Iron‐Based Superconductor with
T
c
=37 K. ChemistrySelect 2018. [DOI: 10.1002/slct.201801271] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Han‐Shu Xu
- Hefei National Laboratory for Physical Sciences at MicroscaleUniversity of Science and Technology of China Hefei 230026, P. R. China
| | - Xiao‐Xiong Wang
- College of Physics ScienceQingdao University Qingdao 266071, P. R. China
| | - Lu‐Lu Tang
- Department of ChemistryUniversity of Science and Technology of China Hefei 230026, P. R. China
| | - Kai‐Ping Yang
- Chemistry Experiment Teaching CenterUniversity of Science and Technology of China Hefei 230026, P. R. China
| | - Dong Yang
- Department of ChemistryUniversity of Science and Technology of China Hefei 230026, P. R. China
| | - Yun‐Ze Long
- College of Physics ScienceQingdao University Qingdao 266071, P. R. China
| | - Kai‐Bin Tang
- Hefei National Laboratory for Physical Sciences at MicroscaleUniversity of Science and Technology of China Hefei 230026, P. R. China
- Department of ChemistryUniversity of Science and Technology of China Hefei 230026, P. R. China
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High temperature superconducting FeSe films on SrTiO3 substrates. Sci Rep 2014; 4:6040. [PMID: 25113391 PMCID: PMC4129414 DOI: 10.1038/srep06040] [Citation(s) in RCA: 100] [Impact Index Per Article: 9.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/16/2014] [Accepted: 07/25/2014] [Indexed: 11/08/2022] Open
Abstract
Interface enhanced superconductivity at two dimensional limit has become one of most intriguing research directions in condensed matter physics. Here, we report the superconducting properties of ultra-thin FeSe films with the thickness of one unit cell (1-UC) grown on conductive and insulating SrTiO3 (STO) substrates. For the 1-UC FeSe on conductive STO substrate (Nb-STO), the magnetization versus temperature (M-T) measurement shows a drop crossover around 85 K. For the FeSe films on insulating STO substrate, systematic transport measurements were carried out and the sheet resistance of FeSe films exhibits Arrhenius TAFF behavior with a crossover from a single-vortex pinning region to a collective creep region. More intriguing, sign reversal of Hall resistance with temperature is observed, demonstrating a crossover from hole conduction to electron conduction above TC in 1-UC FeSe films.
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Lei H, Abeykoon M, Wang K, Bozin ES, Ryu H, Graf D, Warren JB, Petrovic C. Physical properties of K(x)Ni(2-y)Se2 single crystals. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2014; 26:015701. [PMID: 24292376 DOI: 10.1088/0953-8984/26/1/015701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
We have synthesized K0.95(1)Ni1.86(2)Se2 single crystals. The single crystals contain K and Ni deficiencies not observed in KNi2Se2 polycrystals. Unlike KNi2Se2 polycrystals, the superconductivity is absent in single crystals. The detailed physical property study indicates that the K0.95Ni1.86Se2 single crystals exhibit heavy-fermion-like characteristics. The transition to a heavy fermion state below T ~ 30 K results in an enhancement of the electron-like carrier density whereas the magnetic susceptibility shows little anisotropy and suggests the presence of both itinerant and localized Ni orbitals.
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Affiliation(s)
- Hechang Lei
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Uptown, NY 11973, USA
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Han F, Zhu X, Mu G, Zeng B, Cheng P, Shen B, Wen HH. Absence of Superconductivity in LiCu2P2. J Am Chem Soc 2011; 133:1751-3. [DOI: 10.1021/ja108515f] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Fei Han
- National Laboratory for Superconductivity, Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China
| | - Xiyu Zhu
- National Laboratory for Superconductivity, Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China
| | - Gang Mu
- National Laboratory for Superconductivity, Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China
| | - Bin Zeng
- National Laboratory for Superconductivity, Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China
| | - Peng Cheng
- National Laboratory for Superconductivity, Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China
| | - Bing Shen
- National Laboratory for Superconductivity, Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China
| | - Hai-Hu Wen
- National Laboratory for Superconductivity, Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
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