Exciton gas compression and metallic condensation in a single semiconductor quantum wire

Quantum criticality of excitonic Mott metal-insulator transitions in black phosphorus

Quantum phase transition refers to the abrupt change of ground states of many-body systems driven by quantum fluctuations. It hosts various intriguing exotic states around its quantum critical points approaching zero temperature. Here we report the spectroscopic and transport evidences of quantum critical phenomena of an exciton Mott metal-insulator-transition in black phosphorus. Continuously tuning the interplay of electron-hole pairs by photo-excitation and using Fourier-transform photo-current spectroscopy as a probe, we measure a comprehensive phase diagram of electron-hole states in temperature and electron-hole pair density parameter space. We characterize an evolution from optical insulator with sharp excitonic transition to metallic electron-hole plasma phases featured by broad absorption and population inversion. We also observe strange metal behavior that resistivity is linear in temperature near the Mott transition boundaries. Our results exemplify an ideal platform to investigating strongly-correlated physics in semiconductors, such as crossover between superconductivity and superfluity of exciton condensation.

A fluorescent layered oxalato-based canted antiferromagnet

The first fluorescent oxalato-based canted antiferromagnet maintains the quantum nature of the emitters thanks to the isolation provided by the honeycomb matrix.

Correction of the tip convolution effects in the imaging of nanostructures studied through scanning force microscopy

AFM images are always affected by artifacts arising from tip convolution effects, resulting in a decrease in the lateral resolution of this technique. The magnitude of such effects is described by means of geometrical considerations, thereby providing better understanding of the convolution phenomenon. We demonstrate that for a constant tip radius, the convolution error is increased with the object height, mainly for the narrowest motifs. Certain influence of the object shape is observed between rectangular and elliptical objects with the same height. Such moderate differences are essentially expected among elongated objects; in contrast they are reduced as the object aspect ratio is increased. Finally, we propose an algorithm to study the influence of the size, shape and aspect ratio of different nanometric motifs on a flat substrate. Indeed, with this algorithm, convolution artifacts can be extended to any kind of motif including real surface roughness. From the simulation results we demonstrate that in most cases the real motif's width can be estimated from AFM images without knowing its shape in detail.

Purcell effect in photonic crystal microcavities embedding InAs/InP quantum wires

The spontaneous emission rate and Purcell factor of self-assembled quantum wires embedded in photonic crystal micro-cavities are measured at 80 K by using micro-photoluminescence, under transient and steady state excitation conditions. The Purcell factors fall in the range 1.1 - 2 despite the theoretical prediction of ≈15.5 for the figure of merit. We explain this difference by introducing a polarization dependence on the cavity orientation, parallel or perpendicular with respect to the wire axis, plus spectral and spatial detuning factors for the emitters and the cavity modes, taking in account the finite size of the quantum wires.

Surface recombination velocity measurements of efficiently passivated gold-catalyzed silicon nanowires by a new optical method

The past decade has seen the explosion of experimental results on nanowires grown by catalyzed mechanisms. However, few are known on their electronic properties especially the influence of surfaces and catalysts. We demonstrate by an optical method how a curious electron-hole thermodynamic phase can help to characterize volume and surface recombination rates of silicon nanowires (SiNWs). By studying the electron-hole liquid dynamics as a function of the spatial confinement, we directly measured these two key parameters. We measured a surface recombination velocity of passivated SiNWs of 20 cm s(-1), 100 times lower than previous values reported. Furthermore, the volume recombination rate of gold-catalyzed SiNWs is found to be similar to that of a high-quality three-dimensional silicon crystal; the influence of the catalyst is negligible. These results advance the knowledge of SiNW surface passivation and provide essential guidance to the development of efficient nanowire-based devices.

Electrical control of a laterally ordered InAs/InP quantum dash array

We have fabricated an array of closely spaced quantum dashes starting from a planar array of self-assembled semiconductor quantum wires. The array is embedded in a metallic nanogap which we investigate by micro-photoluminescence as a function of a lateral electric field. We demonstrate that the net electric charge and emission energy of individual quantum dashes can be modified externally with the performance limited by the size inhomogeneity of the self-assembling process.