1
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El Hage R, Sánchez-Manzano D, Humbert V, Carreira S, Rouco V, Sander A, Cuellar F, Seurre K, Lagarrigue A, Mesoraca S, Briatico J, Trastoy J, Santamaría J, Villegas JE. Disentangling Photodoping, Photoconductivity, and Photosuperconductivity in the Cuprates. PHYSICAL REVIEW LETTERS 2024; 132:066001. [PMID: 38394577 DOI: 10.1103/physrevlett.132.066001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2023] [Accepted: 01/02/2024] [Indexed: 02/25/2024]
Abstract
The normal-state conductivity and superconducting critical temperature of oxygen-deficient YBa_{2}Cu_{3}O_{7-δ} can be persistently enhanced by illumination. Strongly debated for years, the origin of those effects-termed persistent photoconductivity and photosuperconductivity (PPS)-has remained an unsolved critical problem, whose comprehension may provide key insights to harness the origin of high-temperature superconductivity itself. Here, we make essential steps toward understanding PPS. While the models proposed so far assume that it is caused by a carrier-density increase (photodoping) observed concomitantly, our experiments contradict such conventional belief: we demonstrate that it is instead linked to a photo-induced decrease of the electronic scattering rate. Furthermore, we find that the latter effect and photodoping are completely disconnected and originate from different microscopic mechanisms, since they present different wavelength and oxygen-content dependences as well as strikingly different relaxation dynamics. Besides helping disentangle photodoping, persistent photoconductivity, and PPS, our results provide new evidence for the intimate relation between critical temperature and scattering rate, a key ingredient in modern theories on high-temperature superconductivity.
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Affiliation(s)
- R El Hage
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - D Sánchez-Manzano
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - V Humbert
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - S Carreira
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - V Rouco
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - A Sander
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - F Cuellar
- GFMC, Departamento de Física de Materiales, Universidad de Ciencias Físicas, Facultad Complutense de Madrid, 28040 Madrid, Spain
| | - K Seurre
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - A Lagarrigue
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - S Mesoraca
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - J Briatico
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - J Trastoy
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - J Santamaría
- GFMC, Departamento de Física de Materiales, Universidad de Ciencias Físicas, Facultad Complutense de Madrid, 28040 Madrid, Spain
| | - Javier E Villegas
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
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2
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Deng L, Zhang W, Lin H, Xiang L, Xu Y, Wang Y, Li Q, Zhu Y, Zhou X, Wang W, Yin L, Guo H, Tian C, Shen J. Polarization-dependent photoinduced metal-insulator transitions in manganites. Sci Bull (Beijing) 2024; 69:183-189. [PMID: 38057234 DOI: 10.1016/j.scib.2023.11.058] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/06/2023] [Revised: 11/10/2023] [Accepted: 11/23/2023] [Indexed: 12/08/2023]
Abstract
In correlated oxides, collaborative manipulation on light intensity, wavelength, pulse duration and polarization has yielded many exotic discoveries, such as phase transitions and novel quantum states. In view of potential optoelectronic applications, tailoring long-lived static properties by light-induced effects is highly desirable. So far, the polarization state of light has rarely been reported as a control parameter for this purpose. Here, we report polarization-dependent metal-to-insulator transition (MIT) in phase-separated manganite thin films, introducing a new degree of freedom to control static MIT. Specifically, we observed giant photoinduced resistance jumps with striking features: (1) a single resistance jump occurs upon a linearly polarized light incident with a chosen polarization angle, and a second resistance jump occurs when the polarization angle changes; (2) the amplitude of the second resistance jump depends sensitively on the actual change of the polarization angles. Linear transmittance measurements reveal that the origin of the above phenomena is closely related to the coexistence of anisotropic micro-domains. Our results represent a first step to utilize light polarization as an active knob to manipulate static phase transitions, pointing towards new pathways for nonvolatile optoelectronic devices and sensors.
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Affiliation(s)
- Lina Deng
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China
| | - Weiye Zhang
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China
| | - Hanxuan Lin
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China
| | - Lifen Xiang
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China
| | - Ying Xu
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yadi Wang
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China
| | - Qiang Li
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yinyan Zhu
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Xiaodong Zhou
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Wenbin Wang
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Lifeng Yin
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China; Shanghai Research Center for Quantum Sciences, Shanghai 201315, China; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China; Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Hangwen Guo
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China.
| | - Chuanshan Tian
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China.
| | - Jian Shen
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China; Shanghai Research Center for Quantum Sciences, Shanghai 201315, China; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China; Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China; Shanghai Branch, CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, Shanghai 201315, China.
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3
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Liu R, Si L, Niu W, Zhang X, Chen Z, Zhu C, Zhuang W, Chen Y, Zhou L, Zhang C, Wang P, Song F, Tang L, Xu Y, Zhong Z, Zhang R, Wang X. Light-Induced Mott-Insulator-to-Metal Phase Transition in Ultrathin Intermediate-Spin Ferromagnetic Perovskite Ruthenates. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211612. [PMID: 36626850 DOI: 10.1002/adma.202211612] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Revised: 01/06/2023] [Indexed: 06/17/2023]
Abstract
Light control of emergent quantum phenomena is a widely used external stimulus for quantum materials. Generally, perovskite strontium ruthenate SrRuO3 has an itinerant ferromagnetism with a low-spin state. However, the phase of intermediate-spin (IS) ferromagnetic metallic state has never been seen. Here, by means of UV-light irradiation, a photocarrier-doping-induced Mott-insulator-to-metal phase transition is shown in a few atomic layers of perovskite IS ferromagnetic SrRuO3- δ . This new metastable IS metallic phase can be reversibly regulated due to the convenient photocharge transfer from SrTiO3 substrates to SrRuO3- δ ultrathin films. These dynamical mean-field theory calculations further verify such photoinduced electronic phase transformation, owing to oxygen vacancies and orbital reconstruction. The optical manipulation of charge-transfer finesse is an alternative pathway toward discovering novel metastable phases in strongly correlated systems and facilitates potential light-controlled device applications in optoelectronics and spintronics.
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Affiliation(s)
- Ruxin Liu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Liang Si
- School of Physics, Northwest University, Xi'an, 710127, China
- Institute of Solid State Physics, Vienna University of Technology, Vienna, 1040, Austria
| | - Wei Niu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Xu Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Zhongqiang Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Changzheng Zhu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Wenzhuo Zhuang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yongda Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Liqi Zhou
- College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China
| | - Chunchen Zhang
- College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China
| | - Peng Wang
- College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
| | - Fengqi Song
- School of Physics, Nanjing University, Nanjing, 210093, China
| | - Lin Tang
- Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Yongbing Xu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo, 315201, China
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- Department of Physics, Xiamen University, Xiamen, 316005, China
| | - Xuefeng Wang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
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4
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Perez-Salinas D, Johnson AS, Prabhakaran D, Wall S. Multi-mode excitation drives disorder during the ultrafast melting of a C4-symmetry-broken phase. Nat Commun 2022; 13:238. [PMID: 35017507 PMCID: PMC8752725 DOI: 10.1038/s41467-021-27819-y] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/01/2021] [Accepted: 12/08/2021] [Indexed: 11/23/2022] Open
Abstract
Spontaneous C4-symmetry breaking phases are ubiquitous in layered quantum materials, and often compete with other phases such as superconductivity. Preferential suppression of the symmetry broken phases by light has been used to explain non-equilibrium light induced superconductivity, metallicity, and the creation of metastable states. Key to understanding how these phases emerge is understanding how C4 symmetry is restored. A leading approach is based on time-dependent Ginzburg-Landau theory, which explains the coherence response seen in many systems. However, we show that, for the case of the single layered manganite La0.5Sr1.5MnO4, the theory fails. Instead, we find an ultrafast inhomogeneous disordering transition in which the mean-field order parameter no longer reflects the atomic-scale state of the system. Our results suggest that disorder may be common to light-induced phase transitions, and methods beyond the mean-field are necessary for understanding and manipulating photoinduced phases.
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Affiliation(s)
- Daniel Perez-Salinas
- ICFO - The Institute of Photonics Sciences, The Barcelona Institute of Science and Technology, 08860, Castelldefels, Barcelona, Spain
| | - Allan S Johnson
- ICFO - The Institute of Photonics Sciences, The Barcelona Institute of Science and Technology, 08860, Castelldefels, Barcelona, Spain
| | | | - Simon Wall
- ICFO - The Institute of Photonics Sciences, The Barcelona Institute of Science and Technology, 08860, Castelldefels, Barcelona, Spain.
- Department of Physics and Astronomy, Aarhus University, Ny Munkegade 120, 8000, Aarhus C, Denmark.
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5
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Li J, Wang R, Guo H, Zhu Y, Cao Y, Liu J, Ding H, Wen H, Liu X. Recovery of photoexcited magnetic ordering in Sr 2IrO 4. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:255801. [PMID: 30897558 DOI: 10.1088/1361-648x/ab123d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The recovery of antiferromagnetic and lattice order of Sr2IrO4 upon laser excitation was measured by time-resolved x-ray diffraction on nanosecond time scales. The in situ measurements of both magnetic and lattice order parameters allow direct comparison of their time evolutions without ambiguity. We found that the magnetic order recovers with two time constants. The fast sub-nanosecond recovery is associated with the re-establishment of three dimensional antiferromagnetic order while the slow sub-nanosecond recovery agrees with the lattice cooling on tens of nanoseconds. The strong oscillating behavior of magnetic order during the long time recovery may be related to complicated dynamics of defect-pinned magnetic domains.
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Affiliation(s)
- Jiemin Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China. School of Physics, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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6
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Sun K, Sun S, Zhu C, Tian H, Yang H, Li J. Hidden CDW states and insulator-to-metal transition after a pulsed femtosecond laser excitation in layered chalcogenide 1T-TaS 2- x Se x. SCIENCE ADVANCES 2018; 4:eaas9660. [PMID: 30035223 PMCID: PMC6054513 DOI: 10.1126/sciadv.aas9660] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2018] [Accepted: 06/04/2018] [Indexed: 05/29/2023]
Abstract
The hidden (H) quantum state in 1T-TaS2 has sparked considerable interest in the field of correlated electron systems. Here, we investigate ultrafast switches to stable H charge density wave (H-CDW) states observed in 1T-TaS2-x Se x , with x = 0 and 0.5 crystals, upon excitation with a single femtosecond laser pulse. In situ cooling transmission electron microscopy observations, initiated by a single femtosecond laser pumping with a low fluence, reveal a clear transition from a commensurate CDW phase (qC) to a new CDW order with qH = (1 - δ)qC for the H-CDW state (δ = 1/9) accompanied by an evident phase separation. H-CDW domain relaxation then occurs and yields a stable metallic phase under a high-fluence excitation. Furthermore, electrical resistivity measurements show that the notable drop in x = 0 and 0.5 samples associated with the appearance of H-CDW states depend on laser fluence and temperature. These results potentially provide a new perspective on the photodoping mechanism for the emergence of H-CDW states in the 1T-TaS2-x Se x family.
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Affiliation(s)
- Kai Sun
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shuaishuai Sun
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Chunhui Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Huanfang Tian
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Huaixin Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jianqi Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
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7
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Lin H, Liu H, Lin L, Dong S, Chen H, Bai Y, Miao T, Yu Y, Yu W, Tang J, Zhu Y, Kou Y, Niu J, Cheng Z, Xiao J, Wang W, Dagotto E, Yin L, Shen J. Unexpected Intermediate State Photoinduced in the Metal-Insulator Transition of Submicrometer Phase-Separated Manganites. PHYSICAL REVIEW LETTERS 2018; 120:267202. [PMID: 30004745 DOI: 10.1103/physrevlett.120.267202] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2018] [Revised: 05/09/2018] [Indexed: 06/08/2023]
Abstract
At ultrafast timescales, the initial and final states of a first-order metal-insulator transition often coexist forming clusters of the two phases. Here, we report an unexpected third long-lived intermediate state emerging at the photoinduced first-order metal-insulator transition of La_{0.325}Pr_{0.3}Ca_{0.375}MnO_{3}, known to display submicrometer length-scale phase separation. Using magnetic force microscopy and time-dependent magneto-optical Kerr effect, we determined that the third state is a nanoscale mixture of the competing ferromagnetic metallic and charge-ordered insulating phases, with its own physical properties. This discovery bridges the two different families of colossal magnetoresistant manganites known experimentally and shows for the first time that the associated states predicted by theory can coexist in a single sample.
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Affiliation(s)
- Hanxuan Lin
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Hao Liu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Lingfang Lin
- School of Physics, Southeast University, Nanjing 211189, China
| | - Shuai Dong
- School of Physics, Southeast University, Nanjing 211189, China
| | - Hongyan Chen
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yu Bai
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Tian Miao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yang Yu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Weichao Yu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Jing Tang
- Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yinyan Zhu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yunfang Kou
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Jiebin Niu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Zhaohua Cheng
- Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jiang Xiao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Wenbin Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Elbio Dagotto
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Lifeng Yin
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Jian Shen
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
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8
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Elovaara T, Tikkanen J, Granroth S, Majumdar S, Félix R, Huhtinen H, Paturi P. Mechanisms of photoinduced magnetization in Pr 0.6Ca 0.4MnO 3 studied above and below charge-ordering transition temperature. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2017; 29:425802. [PMID: 28782733 DOI: 10.1088/1361-648x/aa847b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We report the effect of photonic field on the electronic and magnetic structure of a low bandwidth manganite [Formula: see text] [Formula: see text]MnO3 (PCMO) thin film. In particular, the present study confirmed a mechanism that was recently proposed to explain how optical excitation can bias or directly activate the metamagnetic transition associated with the colossal magnetoresistance (CMR) effect of PCMO. The transition is characterized by a shift in the dynamic equilibrium between ferromagnetic (FM) and antiferromagnetic clusters, explaining how it can be suddenly triggered by a sufficient external magnetic field. The film was always found to support some population of FM-clusters, the proportional size of which could be adjusted by the magnetic field and, especially in the vicinity of a thermomagnetic irreversibility, by optical excitation. The double exchange mechanism couples the magnetic degrees of freedom of manganites to their electronic structure, which is further coupled to the ion lattice via the Jahn-Teller mechanism. In accordance, it was found that producing optical phonons into the lattice could lower the free energy of the FM phase enough to significantly bias the CMR effect.
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Affiliation(s)
- T Elovaara
- Department of Physics and Astronomy, Wihuri Physical Laboratory, University of Turku, FI-20014 Turku, Finland
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9
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Chai X, Xing H, Jin K. Evolution of photoinduced effects in phase-separated Sm0.5Sr0.5Mn1-yCryO3 thin films. Sci Rep 2016; 6:23280. [PMID: 27001006 PMCID: PMC4802389 DOI: 10.1038/srep23280] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/28/2015] [Accepted: 03/03/2016] [Indexed: 11/23/2022] Open
Abstract
Systematic study on electrical transport properties has been performed in Sm0.5Sr0.5Mn1-yCryO3 thin films illuminated by the light. An evolution of persistent and transient photoinduced effects induced by the impurity doping and temperature has been observed, which is closely related to the number of ferromagnetic clusters. The maximum persistent photoinduced effect is observed at y = 0.08 and the corresponding value is about 61.7% at the power density of 13.7 mW/mm(2). The underlying mechanism can be understood by the coexistence and competition of the multiphases in phase-separated manganites induced by Cr-doping. These results would pave the way for practical applications in innovative photoelectric devices of all-oxides.
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Affiliation(s)
- Xiaojie Chai
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Science, Northwestern Polytechnical University, Xi’an 710072, China
| | - Hui Xing
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Science, Northwestern Polytechnical University, Xi’an 710072, China
| | - Kexin Jin
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Science, Northwestern Polytechnical University, Xi’an 710072, China
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10
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Li Y, Walko DA, Li Q, Liu Y, Rosenkranz S, Zheng H, Mitchell JF. Evidence of photo-induced dynamic competition of metallic and insulating phase in a layered manganite. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2015; 27:495602. [PMID: 26575485 DOI: 10.1088/0953-8984/27/49/495602] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We show evidence that the competition between the antiferromagetic metallic phase and the charge- and orbital-ordered insulating phase at the reentrant phase boundary of a layered manganite, La0.99Sr2.01Mn2O7, can be manipulated using ultrafast optical excitation. The time-dependent evolution of the Jahn-Teller superlattice reflection, which indicates the formation of the charge and orbital order, was measured at different laser fluences. The laser-induced enhancement and reduction the Jahn-Teller reflection intensity shows a reversal of sign between earlier (~10 ns) and later (~150 ns) time delays during the relaxation after photo excitation. This effect is consistent with a scenario whereby the laser excitation modulates the local competition between the metallic and the insulating phases.
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Affiliation(s)
- Yuelin Li
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439, USA
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11
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Matsuzaki H, Iwata M, Miyamoto T, Terashige T, Iwano K, Takaishi S, Takamura M, Kumagai S, Yamashita M, Takahashi R, Wakabayashi Y, Okamoto H. Excitation-photon-energy selectivity of photoconversions in halogen-bridged Pd-chain compounds: Mott insulator to metal or charge-density-wave state. PHYSICAL REVIEW LETTERS 2014; 113:096403. [PMID: 25215998 DOI: 10.1103/physrevlett.113.096403] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2013] [Indexed: 06/03/2023]
Abstract
Ultrafast photoinduced transitions of a one-dimensional Mott insulator into two distinct electronic phases, metal and charge-density-wave (CDW) state, were achieved in a bromine-bridged Pd-chain compound [Pd(en)2Br](C5-Y)2H2O (en=ethylenediamine and C5-Y=dialkylsulfosuccinate), by selecting the photon energy of a femtosecond excitation pulse. For the resonant excitation of the Mott-gap transition, excitonic states are generated and converted to one-dimensional CDW domains. For the higher-energy excitation, free electron and hole carriers are produced, giving rise to a transition of the Mott insulator to a metal. Such selectivity in photoconversions by the choice of initial photoexcited states opens a new possibility for the developments of advanced optical switching and memory functions.
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Affiliation(s)
- H Matsuzaki
- Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan
| | - M Iwata
- Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan
| | - T Miyamoto
- Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan
| | - T Terashige
- Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan
| | - K Iwano
- Institute of Materials Structure Science, Graduate University for Advanced Studies, High Energy Accelerator Research Organization (KEK), Tsukuba 305-0801, Japan
| | - S Takaishi
- Department of Chemistry, Tohoku University, Sendai, Miyagi 980-8578, Japan
| | - M Takamura
- Department of Chemistry, Tohoku University, Sendai, Miyagi 980-8578, Japan
| | - S Kumagai
- Department of Chemistry, Tohoku University, Sendai, Miyagi 980-8578, Japan
| | - M Yamashita
- Department of Chemistry, Tohoku University, Sendai, Miyagi 980-8578, Japan
| | - R Takahashi
- Division of Materials Physics, Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531, Japan
| | - Y Wakabayashi
- Division of Materials Physics, Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531, Japan
| | - H Okamoto
- Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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12
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Hatano T, Sheng Z, Nakamura M, Nakano M, Kawasaki M, Iwasa Y, Tokura Y. Gate control of percolative conduction in strongly correlated manganite films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2014; 26:2874-2877. [PMID: 24481897 DOI: 10.1002/adma.201304813] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/26/2013] [Revised: 11/10/2013] [Indexed: 06/03/2023]
Abstract
Gate control of percolative conduction in a phase-separated manganite system is demonstrated in a field-effect transistor geometry, resulting in ambipolar switching from a metallic state to an insulating state.
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Affiliation(s)
- Takafumi Hatano
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, 351-0198, Japan
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13
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Cui Y, Liu W, Wang R. Visible light initiated and collapsed resistive switching in TbMnO3/Nb:SrTiO3 heterojunctions. Phys Chem Chem Phys 2013; 15:6804-8. [DOI: 10.1039/c3cp00132f] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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14
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Mizokawa T. Novel photoinduced phase transitions in transition metal oxides and diluted magnetic semiconductors. NANOSCALE RESEARCH LETTERS 2012; 7:582. [PMID: 23092248 PMCID: PMC3485182 DOI: 10.1186/1556-276x-7-582] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/17/2012] [Accepted: 10/03/2012] [Indexed: 06/01/2023]
Abstract
Some transition metal oxides have frustrated electronic states under multiphase competition due to strongly correlated d electrons with spin, charge, and orbital degrees of freedom and exhibit drastic responses to external stimuli such as optical excitation. Here, we present photoemission studies on Pr0.55(Ca1 - ySry)0.45MnO3 (y = 0.25), SrTiO3, and Ti1 - xCoxO2 (x = 0.05, 0.10) under laser illumination and discuss electronic structural changes induced by optical excitation in these strongly correlated oxides. We discuss the novel photoinduced phase transitions in these transition metal oxides and diluted magnetic semiconductors on the basis of polaronic pictures such as orbital, ferromagnetic, and ferroelectric polarons.
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Affiliation(s)
- Takashi Mizokawa
- Department of Complexity Science and Engineering, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan.
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