Critical behavior in ferroelectrics from first principles

Structural, Magnetic, and Dielectric Properties of Laser-Ablated CoFe2O4/BaTiO3 Bilayers Deposited over Highly Doped Si(100)

Laser ablation was used to successfully fabricate multiferroic bilayer thin films, composed of BaTiO3 (BTO) and CoFe2O4 (CFO), on highly doped (100) Si substrates. This study investigates the influence of BaTiO3 layer thickness (50-220 nm) on the films' structural, magnetic, and dielectric properties. The dense, polycrystalline films exhibited a tetragonal BaTiO3 phase and a cubic spinel CoFe2O4 layer. Structural analysis revealed compression of the CoFe2O4 unit cell along the growth direction, while the BaTiO3 layer showed a tetragonal distortion, more pronounced in thinner BTO layers. These strain effects, attributed to the mechanical interaction between both layers, induced strain-dependent wasp-waisted behavior in the films' magnetic hysteresis cycles. The strain effects gradually relaxed with increasing BaTiO3 thickness. Raman spectroscopy and second harmonic generation studies confirmed BTO's non-centrosymmetric ferroelectric structure at room temperature. The displayed dielectric permittivity dispersion was modeled using the Havriliak-Negami function combined with a conductivity term. This analysis yielded relaxation times, DC conductivities, and activation energies. The observed BTO relaxation time behavior, indicative of small-polaron transport, changed significantly at the BTO ferroelectric Curie temperature (Tc), presenting activation energies Eτ in the 0.1-0.3 eV range for T < Tc and Eτ > 0.3 eV for T > Tc. The BTO thickness-dependent Tc behavior exhibited critical exponents ν ~ 0.82 consistent with the 3D random Ising universality class, suggesting local disorder and inhomogeneities in the films. This was attributed to the composite structure of BTO grains, comprising an inner bulk-like structure, a gradient strained layer, and a disordered surface layer. DC conductivity analysis indicated that CoFe2O4 conduction primarily occurred through hopping in octahedral sites. These findings provide crucial insights into the dynamic dielectric behavior of multiferroic bilayer thin films at the nanoscale, enhancing their potential for application in emerging Si electronics-compatible magneto-electric technologies.

Ferroelectric phase-transition frustration near a tricritical composition point

Phase transition describes a mutational behavior of matter states at a critical transition temperature or external field. Despite the phase-transition orders are well sorted by classic thermodynamic theory, ambiguous situations interposed between the first- and second-order transitions were exposed one after another. Here, we report discovery of phase-transition frustration near a tricritical composition point in ferroelectric Pb(Zr_1-xTi_x)O₃. Our multi-scale transmission electron microscopy characterization reveals a number of geometrically frustrated microstructure features such as self-assembled hierarchical domain structure, degeneracy of mesoscale domain tetragonality and decoupled polarization-strain relationship. Associated with deviation from the classic mean-field theory, dielectric critical exponent anomalies and temperature dependent birefringence data unveil that the frustrated transition order stems from intricate competition of short-range polar orders and their decoupling to long-range lattice deformation. With supports from effective Hamiltonian Monte Carlo simulations, our findings point out a potentially universal mechanism to comprehend the abnormal critical phenomena occurring in phase-transition materials.

Phase transition brings a plethora of exotic phenomena and intriguing effects such as spin and charge frustration. However, the phase transition order is not always explicit. Here, the authors discover phase transition frustration near a tricritical composition point in ferroelectric Pb(Zr,Ti)O₃.

Emergent Berezinskii-Kosterlitz-Thouless Phase in Low-Dimensional Ferroelectrics

Using first-principles-based simulations merging an effective Hamiltonian scheme with scaling, symmetry, and topological arguments, we find that an overlooked Berezinskii-Kosterlitz-Thouless (BKT) phase sustained by quasicontinuous symmetry emerges between the ferroelectric phase and the paraelectric one of BaTiO_{3} ultrathin film, being under tensile strain. Not only do these results provide an extension of BKT physics to the field of ferroelectrics, but they also unveil their nontrivial critical behavior in low dimensions.

High-temperature dielectric response of ferroelectric relaxors

It has long been considered that polar nanoregions in relaxors form at Burns temperature T(d) ≈ 600K. High-temperature dielectric investigations of Pb(Mg(1/3)Nb(2/3)) O(3) (PMN) single crystal, PMN-PbTiO(3) ceramics, and (Pb,La) (Zr,Ti)O(3) ceramics reveal, however, that dielectric dispersion, detected around 600K, is due to the Maxwell-Wagner-type contributions of surface layers. The intrinsic response was analyzed in terms of the universal scaling, taking into account the asymptotic and the correction-to-scaling behavior, and the results imply much higher T(d) or formation of polar nanoregions in a broad temperature range. High values of the dielectric constant indicate, however, that polar order already exists at the highest measured temperatures of 800K. The obtained critical exponents indicate critical behavior associated with universality classes typically found in spin glasses.